• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.20-25
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• 2016

Femtosecond laser ablation of ultrathin polymer films on quartz glass using laser pulses of 100 fs and centered at ${\lambda}=400nm$ wavelength has been investigated for nanometer precision thin film patterning. Single-shot ablation craters on films of various thicknesses have been examined by atomic force microscopy, and beam spot diameters and ablation threshold fluences have been determined by square diameter-regression technique. The ablation thresholds of polymer film are about 1.5 times smaller than that of quartz substrate, which results in patterning crater arrays without damaging the substrate. In particular, at a $1/e^2$ laser spot diameter of $0.86{\mu}m$, the smallest craters of 150-nm diameter are fabricated on 15-nm thick film. The ablation thresholds are not influenced by the film thickness, but diameters of the ablated crater are bigger on thicker films than on thinner films. The ablation efficiency is also influenced by the laser beam spot size, following a $w_{0q}{^{-0.45}}$ dependence.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.671-672
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• 2006

We have investigated the behavior of the ultrafast laser ablation of chromium films (200nm) on the silicon and pyrex-glass(corning 7740) substrate with respect to the laser fluence and the number of laser pulses. In addition, several experiments about ITO thin film were carried out with femto-second Ti:Sapphire laser (150fs). Finally, we introduce the ablation characteristic in accordance with materials of thin film and substrate.

• Laser Solutions
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• v.10 no.1
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• pp.19-27
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• 2007

Previous studies demonstrated that laser ablation under transparent liquid can result in ablation enhancement and particle removal from the surface. Although the ablation enhancement by liquid is already known for semiconductor and metal, the phenomena of polymer ablation have not been studied. In this work, tile liquid-assisted excimer laser ablation process is examined for polymer materials, such as polyethylene terephthalate (PET), polymethyl methacrylate (PMMA) with emphasis on ablation enhancement and surface topography. In the case of PET and PMMA, the effect of liquid is analyzed both for thin water film and bulk water. The results show that application of liquid increases the ablation rate of PMMA while that of PET remains unchanged even in the liquid-assisted process. However, the surface roughness is generally deteriorated in the liquid-assisted process. The surface topography is found to be strongly dependent on the method of liquid application, i.e., thin film or bulk liquid.

• Laser Solutions
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• v.1 no.1
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• pp.39-44
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• 1998

Laser ablation system for microscopic defect in thin film pattern was developed in this study. For the varification of this study, several laser ablation tests were accomplished. The ablated shape of thin film and the surface of base glass were analyzed by use of microscopic tools and EPMA. After some tests of thin film, the specification of laser and optical unit(max. laser energy is 25mJ, wavelength is 532nm, Q-switched Nd-YAG laser, frequency is 20Hz, Auto-focus unit is LD type.)

• Journal of the Korean Society for Precision Engineering
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• v.29 no.7
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• pp.799-804
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• 2012

Recently micro-nano structures has widely been reported to improve the performance of waterproof, heat isolation, sound and light absorption in various fields of electric devices such as mobiles, battery, display and solar panels. A lot of micro-sized holes on the surface of thin film provide excellent sound, or heat, or light transmission efficiency more than solid film and simultaneously nano-sized protrusions around micro hole increase the hydrophobicity of the surface of thin film because of lotus leaf effects as generally known previously. In this paper new rapid fabrication process with 355 nm UV laser ablation was proposed to get micro-nano structures on the surface of thin film, which have only been observed at higher laser fluence. Developed thin micro-nano structured film was also investigated the hydrophobic property by measuring the contact angle and demonstrated the possibility to apply to water droplet separation.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.29-33
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• 2010

We have investigated fs-laser ablation as well as optoperforation threshold of PDMS (Polydimethylsiloxane) thin lid cover on ${\mu}$-channel with changing the flow medium from water to hemoglobin. The ablation threshold is found to be independent of both PDMS thin film thickness and flow medium, but the optoperforation threshold is dependent on the films thickness. The observation that the ablation process is well described with simple two-temperature model supposed that the cover lid PDMS of $\mu$-channel be processed with minimized thermal effects by fs-laser with low laser fluence.

• Journal of Power System Engineering
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• v.9 no.4
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• pp.118-123
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• 2005

We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.60-65
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• 2006

Previous studies demonstrated that laser ablation under transparent liquid can result in ablation enhacement and particle removal from the surface. In this work, the liquid-assisted excimer laser ablation process is examined fer polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), Si, and alumina with emphasis on ablation enhacement, surface topography, and debris formation. In the case of PET and PMMA, the effect of liquid is analyzed both fer thin water film and bulk water. As the ablation enhanement by liquid is already known for Si and alumina, the analysis focuses on surface topography and debris formation resulting from the liquid-assisted laser ablation process. The results show that application of liquid increases the ablation rate of PMMA while that of PET remains unchanged even in the liquid-assisted process. It is also revealed that the liquid can significantly improve the surface quality by reducing the debris deposition. However, the surface roughness is generally deteriorated in the liquid-assisted process. The surface toporaphy is found to be strongly dependent on the method of liquid application, i.e., thin film or bulk liquid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.