• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.911-914
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• 2010

In this paper, the $CuInSe_2$ thin film was prepared by using co-evaporation method in four different substrate temperatures $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$. When the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the single-phase $CuInSe_2$ was crystallized. As the temperature increased, it was shown that the thickness of the thin film was decreased with increment of the hall coefficient. When the sample was prepared at $200^{\circ}C$ of the subsrate temperature, the values of band gap energy (Eg), sheet resister and resistivity were measured 0.99 eV, $89.82\;{\Omega}/{\square}$ and $103{\times}10^{-4}\;{\Omega}{\cdot}cm$, respectively.

• 전기학회논문지P
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• 제58권4호
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• pp.615-618
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• 2009

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].

• 대한기계학회논문집A
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• 제21권12호
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• pp.2090-2095
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• 1997

The plane stress fracture toughness for thin aluminum alloy(2024-T3 and 7075-T6) specimens are characterized by using compact-tension (CT) specimens. Anti-buckling plates were fabricated on both sides of the thin CT specimens to prevent the buckling phenomena which caused by the 45.deg. C plastic yielding at the crack tip under the plane stress condition. The plane stress fracture toughnesses determined by three different procedures are compared with each others. The plane stress fracture toughnesses are also compared with a few published values which were determined by using center-cracked panel specimens.

• 통합자연과학논문집
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• 제4권4호
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• pp.294-297
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• 2011

Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.

• 한국재료학회지
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• 제19권4호
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• pp.203-206
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• 2009

$Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.

• 한국재료학회지
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• 제31권10호
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• pp.576-581
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• 2021

To improve the shortcomings and expand the advantages of the single-roll melt drag method, which is a type of continuous strip casting method, the melt drag method with a molding belt is applied to AZ31 magnesium alloy. By attaching the forming belt to the melt drag method, the cooling condition of the thin plate is improved, making it possible to manufacture thin plates even at high roll speed of 100 m/min or more. In addition, it is very effective for continuous production of thin plates to suppress oxidation of the molten metal on the roll contact surface by selecting the protective gas. As a result of investigating the relationship between the contact time between the molten metal and the roll and the thickness of the sheet, it is possible to estimate the thickness of the sheet from the experimental conditions. The relationship between the thin plate thickness and the grain size is one in which the thinner the thin plate is, the faster the cooling rate of the thin plate is, resulting in finer grain size. The contact state between the molten metal and the roll greatly affects the grain size, and the minimum average grain size is 72 ㎛. The thin plate produced using this experimental equipment can be rolled, and the rolled sample has no large cracks. The tensile test results show a tensile strength of 303 MPa.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.822-824
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• 2002

Transparent conducting ZnO:$Ga_2O_3$ thin films were deposited on glass substrates using rf magnetron sputtering method. The ZnO:$Ga_2O_3$ thin films were highly c-axis oriented normal to the substrates and had smooth surface features. The sheet resistance of the films was 2.8-6.4 ${\Omega}/{\square}$ at the growth temperature ranging from 25 to 30$^{\circ}C$.

• 대한전자공학회논문지
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• 제25권12호
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• pp.1582-1585
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• 1988

A cavity perturbation technique is employed to determine the dielectric property of thin samples. Substrates in microwave integrated circuits are fabricated in sheet form and are expected to have a dielectric constant less than 10 and a dielectric loss better than 10**-3. This research aimed to determine both dielectric constant and dielectric loss with good accuracy. The tecynique makes use of thin circular disk samples placed in a right circular cylindrical cavity. The accuracy of measurements is within \ulcorner% for dielectric constnat and 3x10**-4 for dielectric loss.

• Journal of Welding and Joining
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• 제21권2호
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• pp.57-63
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• 2003

Since new types of vehicles or structures made from thin aluminum alloy are under rapid development and some products are already on the market, welding of aluminium sheet is increasing. MIG(Metal Inert Gas), MIG-Pulse, TIG(Tungsten Inert Gas) welding are the typical Ai welding. MIG welding has the advantage of high speed, but it is difficult to apply to the thin plate, because of bum-through by the high heat input and spatter. MIG-Pulse welding can weld without spatter and burn-through, but when the gap exists at the welding joint, there is quite a possibility of bum-through. TIG welding is difficult to weld at a high speed. AC Pulse welding alternates between DCEP(Direct Current Electrode Positive) and DCEN(Direct Current Electrode Negative). DCEN is higher wire melting rate than DCEP, while lower temperature of droplet than DCEP. In AC Pulse welding, far fixed welding current, wire melting rate increases as the EN ratio increases. For fixed wire feed rate, welding current decreases as the EN ratio increases. Because of these features, the temperature of droplet, the depth of penetration, the width of bead decrease and the reinforcement height increases as EN ratio increases, and these are able to weld at a high speed, lower heat input. It is the purpose of this study that design of AC pulse current waveform for MIG welding of Al sheet and estimation of output characteristic.