• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.59-62
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• 2017

In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.10-10
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• 2009

We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

• 전기학회논문지P
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• 제58권4호
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• pp.495-498
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• 2009

To improve the efficiency of the high voltage cable for BLU(backlight unit) of TFT-LCD(Thin Film Transistor-Liquid Crystal Display), the analysis for the trial products(UL3239, UL3633) is conducted by using SEM(scanning electron microscope) and EDX(Energy Dispersive X-ray Spectroscopy). The result that it is possible to accumulate the know-how to about stranding pitch through effective improvement of stranding process. The troubles which are the badness of withstanding voltage and tensile strength etc. are solved by development of excellent material. Furthermore, phenomenon of conductor unfasten in the harness work is solved by improvement of the stranding wire process.

• Journal of Information Display
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• 제10권4호
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• pp.171-174
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• 2009

The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor ($\alpha$-IGZO TFT) were studied. When the $\alpha$-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The $\alpha$-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the $\alpha$-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the $\alpha$-IGZO films.

• 한국진공학회지
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• 제1권1호
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• pp.212-222
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• 1992

To use polycrystalline Si Thin Film Transistor (poly-Si TFT) in high density SRAM instead of High Load Resistor (HLR), TFT is needed to show good electrical characteristics such as large carrier mobility, low leakage current, high driver current and low subthreshold swing. To satisfy these electrical characteristics, the trap state density must be reduced in the channel poly. Technological issues pertinent to the channel poly fabrication process are investigated and discussed. They are solid phase growth (SPG), Si-ion implantation, laser annealing and hydrogenation. The electrical properties of several CVD oxides used as the gate oxide of TFT are compared. The dependence of the electrical characteristics of TFT on source-drain ion-implantation dose, drain offset length and dopant lateral diffusion are also described.

• 한국광학회지
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• 제19권1호
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• pp.43-47
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• 2008

현재 TFT-LCD(Thin Film Transistor Liquid Crystal Display)에 사용되는 BLU(Back Light Unit) 패턴 크기는 수 십 ${\mu}m$인데 반해, 최근에는 BLU 패턴의 크기를 수 ${\mu}m$ 또는 그 이하로 조절함으로써 출력광의 휘도를 증가시키고 균일도를 향상시키고자 하는 연구가 진행되고 있다. 본 연구에서는 패턴의 크기, 분포 및 점유 면적이 출력광의 분포에 미치는 영향을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.531-533
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• 2009

We've studied the optical and electrical properties of amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT). When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the offstate drain current was slightly increased, while below 550 nm it was increased significantly. The a-IGZO TFT was extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.461-463
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• 2009

We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.417-420
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• 2007

A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with lowtemperature poly-silicon (LTPS) thin film transistor (TFT). For accurate sensing even with the large variation and mismatches in the characteristics of LTPS TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns read access time with 7V supply voltage while dissipating 4.05mW and 1.75mW for write and read operation, respectively