• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.175-180
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• 2002

Use spctrophotometer to estimate thin film uniformity of lens, Compare, and analyze thin film uniformity availability selecting two peaks of Reflectance(R%) measuring on spectrum. Wavelength dependence's Reflectance in position of center, middle and edge of lens etc... obtain thin film's thickness (t) from Wavelength region (${\lambda}_1,{\lambda}_2$) of two peaks of Reflectance. $$t=\frac{1}{2(n^2-\sin^2{\theta})^{1/2}}{\times}\frac{{\lambda}_1{\lambda}_2}{{\lambda}_2-{\lambda}_1}$$ If Reflectance pattern is uniformity value in position of center middle of lens, edge etc... thin film has uniformity. Applied thin film uniformity estimation method to 1st layer $MgF_2$(n=1.38) coating lens. It was about thin film's thickness difference 360nm. Can analyze coating lens' thin film uniformity easily from Reflectance relationship measurement about Wavelength dependence.

• Journal of IKEEE
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• v.25 no.1
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• pp.69-75
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• 2021

In this work, we consider the fabrication method and electrical characteristics of dye-sensitized solar cells (DSSCs), which use titanium (Ti) metal thin films to replace expensive fluorine tin oxide (FTO) electrodes. The thickness of the Ti thin film was changed by adjusting the deposition time of the Ti, and the surface resistance decreased as the thickness of the Ti thin film became thicker. The thickness of the Ti thin film was shown to be similar to the surface resistance of the FTO thin film at approximately 190nm and the DSSC with a thickness of approximately 250nm showed the highest energy conversion efficiency of 4.24%. Furthermore, the possibility of commercialization was confirmed by fabricating and evaluating the DSSC module.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.29-34
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• 2006

In order to design an OLED(Organic Luminescent Emitting Device) evaporation system, geometric simulation of film thickness distribution profile is required. For the OLED evaporation process, thin film thickness uniformity is of great practical importance. In this paper, a geometric modeling algorithm is introduced for process simulation of the OLED evaporating process. The physical fact of the evaporating process is modeled mathematically. Based on the developed method, the thickness of the thin-film layer can be successfully controlled.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.109-110
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• 2008

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.117-124
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• 2018

Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.15-21
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• 2019

We investigated the structural, electrical and optical properties of zinc oxide (ZnO) ultra-thin films grown at $150^{\circ}C$ by atomic layer deposition (ALD). Diethylzinc and deionized water were used as metal precursors and reactants, respectively, for the deposition of ZnO thin films. The growth rate per ALD cycle was a constant 0.21 nm/cycle at $150^{\circ}C$, and samples below 50 cycles had amorphous properties due to the relatively thin thickness at the initial ALD growth stage. With the increase of the thickness from 100 cycles to 200 cycles, the crystallinity of ZnO thin films was increased and hexagonal wurtzite structure was observed. In addition, the particle size of the ZnO thin film increased with increasing number of ALD cycles. Electrical properties analysis showed that the resistivity value decreased with the increase of the thin film thickness, which is correlated with the decrease of the grain boundary concentration in the thicker ZnO thin film due to the increase of grain size and the improvement of the crystallinity. Optical characterization results showed that the band edge absorption in the near ultraviolet region (300 nm~400 nm) was increased and shifted. This phenomenon is due to the increase of the carrier concentration with the increase of the ZnO thin film thickness. This result agrees well with the decrease of the resistivity with the increase of the thin film thickness. Consequently, as the thickness of the thin film increases, the stress on the film surface is relaxed, the band gap decreases, and the crystallinity and conductivity are improved.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.255-259
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• 2011

The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.586-589
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• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical properties of AZO thin film were measured by a-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-4}\;\Omega-cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.443-446
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• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.