• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.1
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• pp.101-110
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• 2006

This study was performed to investigate the surface properties and in vitro biocompatibility of electrochemically oxidized Ti-6Al-7Nb alloy by anodic spark discharge technique. Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1000 SiC paper, ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed using a regulated DC power supply. The applied voltages were given at 240, 280, 320, and 360 V and current density of $30mA/cm^2$. Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. Samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ during 30 days. The results obtained were summarized as follows; 1. The oxide films were porous with pore size of $1{\sim}5{\mu}m$. The size of micropores increased with increasing the spark forming voltage. 2. The main crystal structure of the anodic oxide film was anatase type as analyzed with thin-film X-ray diffractometery. 3. Needle-like hydroxyapatie (HA) crystals were observed on anodic oxide films after hydrothermal treatment at $300^{\circ}C$ for 2 hours. The precipitation of HA crystals was accelerated with increasing the spark forming voltage. 4. The precipitation of the fine asperity-like HA crystals were observed after being immersed in Hanks' solution at $37^{\circ}C$. The precipitation of HA crystals was accelerated with increasing the spark forming voltage and the time of immersion in Hanks' solution. 5. The Ca/P ration of the precipitated HA layer was equivalent to that of HA crystal as increasing the spark forming voltage and the time of immersion in Hanks' solution.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.9
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• pp.1015-1020
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• 2011

Nanoimprint lithography has been actively investigated. This method can replicate a nanopatterned master stamp onto a thin polymer film on a silicon substrate and so on. In this study, a square-shaped hollow piezoelectric actuator is presented, which is newly developed. This actuator is used for driving a nanoscale stamp in nanoimprint lithography instead of a conventional electric motor. The fabricated prototype actuator has 95 layers and side lengths of 23 mm and 18 mm for the outer and inner squares, respectively. By adopting a novel process instead of the conventional forming process for fabricating a one-layer actuator, the one-layer is composed of four rectangular segments produced by sawing a ceramic film with a thickness of 0.3 mm. The basic characteristics on displacement and generation force of the fabricated prototype actuator are experimentally investigated. Furthermore, the displacement characteristics obtained by using a PI controller are tested and discussed.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1181-1187
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• 1999

PZT(53/47) precursor 1M sols were prepared using a diol based Sol-Gel process, and thin films were deposited by spin coating onto Pt/Ti/$SiO_2$/Si substrates. With a single coating, final film thickness of aproximately 0.9${\mu}m $ was achieved from diol-based PZT sol. Since PZT crystallized in a ferroelectric perovskite phase from an intermediate nonferroelectric pyrochlore phase, the effects of the presence of perovskite PZT seeds on the phase transformation of PZT were investigated. Seeded PZT films were prepared from the seeded PZT 1M sols in which seeds with less than 0.2${\mu}m $ in size and 1wt% were dispersed in n-propanol before mixing with the PZT stock solution. The seeding effects were confirmed by the fact that the formation temperature of perovskite phase decreased by 50$^{\circ}C$ with less than 1wt% seeds.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Korean Chemical Engineering Research
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• v.57 no.4
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• pp.519-524
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• 2019

Even though stainless steel foil is not a highly efficient material for film-type solar cell, it has strong passivation capability without additional process. In this study, silicone resin was employed during a-Si:H thin film solar cell fabrication for the purpose of planarization and electrical insulation. In the first stage of process, silicone resin was coat onto the stainless steel (STS) using spin coater with thickness of $2{\sim}3{\mu}m$ and followed by aluminum deposition using ion beam application. Unexpectedly buckling was formed during aluminum deposition process. After subsequent fabrication processes, solar cell performance was evaluated. In voltage-current data, slight increase of cell performance was obtained and interpreted by the increase of light scattering.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.684-689
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• 2019

Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a $BaTiO_3$ coating layer with ${\sim}9{\mu}m$ thickness is fabricated using an aerosol deposition method on (100) and (110) cut $SrTiO_3$ single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and $1,300^{\circ}C$ for 5 h). $BaTiO_3$ layer shows different growth behavior and X-ray diffraction depending on cutting direction of $SrTiO_3$ seed. Rectangular pillars at $SrTiO_3$ (100) and laminating thin plates at $SrTiO_3$ (110), respectively, are observed.

• Composites Research
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• v.35 no.3
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• pp.175-181
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• 2022

Due to the increasing number of wireless communication devices in mmWave frequency bands, there is a high demand for electromagnetic interference (EMI) shielding and heat dissipating materials to avoid device malfunctions. This paper proposes an EMI shielding composite film with a high heat dissipation characteristic. To achieve this, a conductive grid is integrated with a polymer-based composite layer including magnetic and heat dissipating filler materials. A high shielding effectiveness (>40 dB), low reflection shielding effectiveness (<3 dB), high thermal conductivity (>10 W/m·K), thin thickness (<500 ㎛) are simultaneously achieved with a tailored design of composite layer compositions and grid geometries in 5G communication band of 26.5 GHz.