• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.100-103
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• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.365-366
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• 2007

High quality cathode with high deposition rate of thin films and long target life time is required for manufacturing TFT-LCD and semiconductor. We developed WV(wide view) sputtering cathode with wide erosion area and high deposition rate. Ti thin film thickness variation in WV cathode is below 5% for 380 kWh target life time. Al thin film thickness using normal cathode is decreased about 20%. By using WV cathode, target using efficiency was improved 40%. in comparison with normal cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.406-407
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• 2007

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.7
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• pp.1285-1290
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• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.134-138
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• 2021

Various types of precision plastic thin films are used widely in high-performance displays, such as smartphones. For plastic thin-films manufactured by the Roll-to-Roll process, the film thickness must be measured and managed while moving. In the Roll-to-Roll process, wrinkles are generated when tension is applied to the film, which causes an inclination on the optical axis of the thickness gauge, resulting in a loss of accuracy. Therefore, this study attempted to develop an optical interference tomography measurement system. In this study, the tilt angle of the film was measured to correct the measurement value error in the thickness gauge caused by the tilt of the film. The system was constructed so that the laser was irradiated on the tilted film, and the laser reflected from the film was formed on the PSD. The relationship between the tilt angle of the film and the output value of the PSD was obtained experimentally. Using this, a device to measure the tilt angle of the film was constructed, and angle measurements were taken at a speed of 250,000Hz.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.320-324
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• 1993

The effect of sputtering conditions on magnetic properties of CoCrMo/Cr magnetic thin film was investigated. Substrate temperature were controlled from R. T to $250^{\circ}C$. The thickness changes of Cr underlayer and CoCrMo magnetic layer were in the range of $1000-2500\AA$ and $300-800\AA$, respectively. Grain size was found to be decreased with increasing magnetic layer thickness(from $500\AA$ to $800\AA$). CoCrMo magnetic layer microstructure showed relatively small dependence on Cr underlayer thickness, substrate temperature. Coercivity increased with increasing Cr underlayer, magnetic layer thickness and substrate temperature. CoCrMo/Cr thin film showed a coercivity of 880 Oe in $700\AA$ magnetic layer thickness and $1000\AA$ Cr underalyer thickness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.2
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• pp.1-5
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• 1971

The resistances of gold thin film are measured as a function of thickness and temperature(300$^{\circ}$k~420$^{\circ}$k). In this paper, the experimental results are analysed using the theory which had been proposed by Sondheimer and Neugebauer and it is shown that the temperature coefficient of resistance of gold thin film become meatily zero at the value of thickness of about 45$\AA$ and its critical thickness is about 60$\AA$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.32.1-32.1
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• 2011

Ultra thin tantalum nitride (TaNx) films with various thicknesses (10 nm to 40 nm) have been deposited by rf magnetron sputtering technique on glass substrates. The as deposited films were systematically characterized by several analytical techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR double beam spectrophotometer and four point probe method. From the XRD results, the as deposited films are in amorphous nature, irrespective of the film thicknesses. The films composition was changed greatly with increasing the film thickness. SEM micrographs exhibited the densely pack microstructure, and homogeneous surface covered by small size grains at lower thickness deposited films. The surface roughness of the films was linearly increases with increasing the films thickness, consequently the transmittance decreased. The absorption edge was shifted towards higher wavelength as the film thickness increases.