• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.50-50
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• 2007

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.143-145
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• 2003

External shunt resistor is used in Nb/AlOx/Nb Josephson junction which is basic component of RSFQ circuit. This is to increase damping and to make the so called 'self-reset' optimized for high speed operation. In this study, we fabricated and investigated sheet resistance of Pd and PdAu thin film, and simulated the inductance effect of the shunt resistor to the Josepshon junction dynamics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• 한국진공학회지
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• 제9권3호
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• pp.237-241
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• 2000

TFT-LCD(thin film transistor-liquid crystal display) 패널의 데이터 배선 재료로 사용하기 위하여 AlNd(2 wt%)의 Al합금 박막을 dc 마그네트론 스퍼터링 방법으로 유리 기판에 증착하여 열처리전과 열처리후의 구조적, 전기적, 식각 박막 특성을 조사하였다. 또한 증착한 박막을 식각하여 그 특성을 조사하였고, ITO를 증착하여 AlNd과의 접촉 저항을 Kelvin resistor를 사용하여 측정하였다. 증착된 박막을 $350^{\circ}C$에서 20분간 열처리 하였을때 AlW박막은 비저항이 감소하였고 약 $4\;{\mu\Omega}cm$의 아주 좋은 비저항 특성을 보였다. 주사전자 현미경(SEM)과 원자힘현미경(AFM)으로 표면을 분석한 결과 좋은 힐록방지 특성을 보임을 알 수 있었다. AlNd의 식각 특성은 아주 좋게 나타났고, ITO와 AlNd의 최저 접촉저항값은 약 $110\;{\mu\Omega}cm$이었다. 측정된 특성들을 바탕으로 AlNd(2 wt.%) 박막의 적용 가능성을 해상도와 화면 크기 측면에서 살펴보았을 때, 25인치 SXGA급 패널에 적용 가능함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제30권9호
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• pp.566-571
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• 2017

A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.437-440
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• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• 전기학회논문지
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• 제65권3호
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• pp.445-451
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• 2016

General fuse elements of solution for fast acting operation characteristics made using silver or silver alloy, those are not able to dominate cost competition to the advanced global leaders that have not only high technology but competitive price. In this study, the method that compose the fuse elements manufactured solution of fast acting operation characteristics by using precision multi-layer thin film plating and helical cutting process from low-priced copper metal. Furthermore, in order to move rated current line of fuse due to the heat loses, the manufacture construction method of fixed resistor is introduced, and then Ni-P plating layer and Sn plating layer are introduced multiply for controling fine opening time characteristics. So this study can establish the high productive and low-priced production method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1637-1639
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• 2000

Resister networks are used widely in many, high frequency applications for attenuators. In this paper we studied the frequency characteristics of attenuator using network analyzer and compared Ni-Cr thin film resistor with thick film resistor attenuator. Also from return loss, insertion loss and VSWR we obtained the maximum available frequency of these attenuators.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)