• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.93.2-93.2
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• 2010

Recently, printing and coating technologies application fields have been expanded to the energy field such as solar cell. One of the main reasons, why many researchers have been interested in printing technology as a manufacturing method, is the reduction of manufacturing cost. In this paper, We fabricated CIGS solar cell thin film layer by doctor blade methods using synthesis of CIS precursor nanoparticles ink on molybdenum (Mo) coated soda-lime glass substrate. Synthesis CIS precursor nanoparticles ink fabrication was mixed Cu, In, Se powder and Ethylenediamine, using microwave and centrifuging. Using multi coating process as we could easily fabrication a fine flatness CIS thin-film layer ($0.7{\sim}1.35{\mu}m$), and reduce a manufacture cost and process steps. Also if we use printing and coating method and solution process in each layer of CIGS solar cell (electrode, buffer), it is possible to fabricate all printed thin-film solar cell.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.83-84
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• 2009

Thin film solar cells based on CIGS continue to be a leading candidate for thin film photovoltaic devices due to their appropriate bandgap, long-term stability, and low-cost production. To date, the most successful technique for the deposition of a CIGS absorber layer has been based on the co-evaporation However, the evaporation process is difficult to scale-up for large-area manufacturing the sputtering and Selenizaton process has been a promising method for low-cost and large-scale production of high quality CIGS In this study, we have used Cu and CuIn alloy targets for precursor deposition the precursor deposited by sputtering Cu and CuIn targets and $CuInSe_2$ thin film is manufactured by Selenization process

• Journal of the Korean Graphic Arts Communication Society
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• v.14 no.1
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.714-719
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• 2005

NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

• Polymer(Korea)
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• v.38 no.4
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• pp.525-529
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• 2014

PEDOT-$TiO_2$ hybrid conductive thin film including semiconductive metal oxide was successfully prepared via simultaneous vapor phase polymerization (VPP). The mechanical properties such as pencil hardness and anti-scratch property as well as optoelectrical properties of PEDOT-$TiO_2$ hybrid thin film could be improved as compared with pristine PEDOT thin film. Physicochemically stable crosslinked $TiO_2$ layer derived from a sol-gel process by FTS was generated in the PEDOT thin film layer by simultaneous VPP, resulting in improving mechanical properties of the hybrid thin films without any deterioration of their original optoelectrical properties. PEDOT-$TiO_2$ hybrid thin film showed better electrical conductivity as compared with PEDOT film. It might be due to the fact that the surface morphology of hybrid thin film prepared by simultaneous VPP showed smoother than that of pristine PEDOT thin film.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1326-1331
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• 2009

Drying process in the cylindrical thin film layer of sludge with the thickness less than a few millimeters has been investigated. Thin film drying is specially designed and used to dry the viscous materials like sewage sludge. The thin film layer of sludge is dried on the metallic cylindrical surface through which thermal energy is supplied to the layer during drying. The wall temperature is assumed to be constant during drying in the present study for the simplification. In order to solve the equations, the mass transfer rate on the drying surface should be determined. The mass flux of evaporated water vapor on the surface is estimated with the formulation given in the literature. The effect of some physical parameters on drying has been examined to figure out the drying characteristics of the sludge layer.

• Current Applied Physics
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• v.18 no.11
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• pp.1447-1450
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• 2018

The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.349-349
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• 2008

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.378-380
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• 2009

$MgF_2$ is a current material for the optical applications in the UV and deep UV range. Process variables for manufacturing the $MgF_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions, and then by changing a number of vapor deposition conditions and substrate temperature, Annealing conditions variously, structural and Optical characteristics were measured. Thereby, optimum process variables were derived. Nevertheless, modern applications still require improvement of the optical and structural quality of the deposited layers. In the present work, the composition and microstructure of $MgF_2$ single layers grown on slide glass substrate by Electro beam Evaporator(KV-660) processes, were analyzed and compared. The surface Substrate temperature having an effect on the quality of the thin film was changed from $200[^{\circ}C]$ to $350[^{\circ}C]$ at intervals of $50[^{\circ}C]$. and annealing temperature an effect on the thin film was changed from $200[^{\circ}C]$ to $400[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.321-326
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• 2021

We fabricated BiAlO thin film by a solution process with a brush coating to be used as liquid crystal (LC) alignment layer. Solution-processed BiAlO was coated on the glass substrate by brush process. Prepared thin films were annealed at different temperatures of 80℃, 180℃, and 280℃. To verify whether the BiAlO film was formed properly, X-ray photoelectron spectroscopy analysis was performed on Bi and Al. Using a crystal rotation method by polarized optical microscopy, LC alignment state was evaluated. At the annealing temperature of 280℃, the uniform homogenous LC alignment was achieved. To reveal the mechanism of LC alignment by brush coating, field emission scanning electron microscope was used. Through this analysis, spin-coated and brush coated film surface were compared. It was revealed that physical anisotropy was induced by brush coating at a high annealing temperature. Particles were aligned in one direction along which brush coating was made, resulting in a physical anisotropy that affects a uniform LC alignment. Therefore, it was confirmed that brush coating combined with BiAlO thin film annealed at high temperature has a significant potential for LC alignment.