• 제목/요약/키워드: Thin Film Process

검색결과 2,504건 처리시간 0.029초

무연솔더 범프 접촉 탐침 핀의 Sn 산화막 형성 기제 (Formation Mechanisms of Sn Oxide Films on Probe Pins Contacted with Pb-Free Solder Bumps)

  • 배규식
    • 한국재료학회지
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    • 제22권10호
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    • pp.545-551
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    • 2012
  • In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The $SnO_2$ phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< $150^{\circ}C$). Further oxidation to $SnO_2$ is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.

상온분사분말공정에 의해 SrTiO3 (100), (110) Seed에 코팅된 BaTiO3의 고온 성장 거동 분석 (High Temperature Grain Growth Behavior of Aerosol Deposited BaTiO3 Film on (100), (110) Oriented SrTiO3 Single Crystal)

  • 임지호;이승희;김기현;지성엽;정승운;박춘길;정한보;정대용
    • 한국재료학회지
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    • 제29권11호
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    • pp.684-689
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    • 2019
  • Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a $BaTiO_3$ coating layer with ${\sim}9{\mu}m$ thickness is fabricated using an aerosol deposition method on (100) and (110) cut $SrTiO_3$ single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and $1,300^{\circ}C$ for 5 h). $BaTiO_3$ layer shows different growth behavior and X-ray diffraction depending on cutting direction of $SrTiO_3$ seed. Rectangular pillars at $SrTiO_3$ (100) and laminating thin plates at $SrTiO_3$ (110), respectively, are observed.

UVO 처리에 따른 NiOx 박막 및 페로브스카이트 태양전지 셀 특성 변화 (Effect of UVO Treatment on Optical and Electrical Properties of NiOx Thin Film and Perovskite Solar Cells)

  • 조수진;황재근;편도원;정석현;이솔희;이원규;황지성;최영호;김동환
    • Current Photovoltaic Research
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    • 제12권1호
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    • pp.1-5
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    • 2024
  • Perovskite solar cells have exhibited a remarkable increase in efficiency from an initial 3.8% to 26.1%, marking a significant advancement. However, challenges persist in the commercialization of perovskite solar cells due to their low stability with respect to humidity, light exposure, and temperature. Moreover, the instability of the organic charge transport layer underscores the need for exploring inorganic alternatives. In the manufacturing process of the perovskite solar cells' oxide charge transport layer, ultraviolet-ozone (UVO) treatment is commonly applied to enhance the wettability of the perovskite solution. The UVO treatment on metal oxides has proven effective in suppressing surface oxygen vacancies and removing surface organic contaminants. This study focused on the characterization of nickel oxide as the hole transport material in perovskite solar cells, specifically investigating the impact of UVO treatment on film properties. Through this analysis, changes induced by the UVO treatment were observed, and consequent alterations in the device characteristics were identified.

Gravure Offset 인쇄에 의한 미세 전극용 Ag Paste 개발 (Gravure Offset Printed on Fine Pattern by Developing Electrodes for the Ag Paste)

  • 이상윤;장아람;남수용
    • 한국인쇄학회지
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    • 제30권3호
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    • pp.45-56
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    • 2012
  • Printing technology is accepted by appropriate technology that smart phones, tablet PC, display(LCD, OLED, etc.) precision recently in the electronics industry, the market grows, this process in the ongoing efforts to improve competitiveness through the development of innovative technologies. So printed electronics appeared by new concept. This technology development is applied on electronic components and circuits for the simplification of the production process and reduce processing costs. Low-temperature process making possible for widening, slimmer, lighter, and more flexible, plastic substrates, such as(flexible) easily by forming a thin film on a substrate has been studied. In the past, the formation of the electrode used a screen printing method. But the screen printing method is formation of fine patterns, high-speed printing, mass production is difficult. The roll-to-roll printing method as an alternative to screen printing to produce electronic devices by printing techniques that were used traditionally in the latest technology and processing techniques applied to precision control are very economical to implement fine-line printing equipment has been evaluated as. In order to function as electronic devices, especially the dozens of existing micro-level of non-dot print fine line printing is required, the line should not break at all, because according to the specifications required to fit the ink transfer conditions should be established. In this study of roll-to-roll printing conductive paste suitable for gravure offset printing by developing Ag paste for forming fine patterns to study the basic physical properties with the aim of this study were to.

3차원 SONOS 낸드 플래쉬 메모리 셀 적용을 위한 String 형태의 폴리실리콘 박막형 트랜지스터의 특성 연구 (A Study on Poly-Si TFT characteristics with string structure for 3D SONOS NAND Flash Memory Cell)

  • 최채형;최득성;정승현
    • 마이크로전자및패키징학회지
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    • 제24권3호
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    • pp.7-11
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    • 2017
  • 본 논문은 3차원 낸드 플래쉬 기억 소자에 적용을 위해 소노스(SONOS) 형태로 기억 저장 절연막을 채용하고 채널로 폴리실리콘을 사용한 박막형 트랜지스터에 대해 연구하였다. 셀의 source/drain에는 불순물을 주입 하지 않았고, 셀 양 끝단에는 선택 트랜지스터를 배치하였다. 셀의 채널과 선택 트랜지스터의 source/drain 불순물 농도 변화에 대한 평가를 진행하여 공정 최적화를 하였다. 선택 트랜지스터의 농도 증가 시 채널 전류의 상승 및 삭제특성이 개선됨을 확인 하였는데 이는 GIDL에 의한 홀 생성이 증가하였기 때문이다. 최적화된 공정 변수에 대해 삭제와 쓰기 후 문턱전압의 프로그램 윈도우는 대략 2.5V를 얻었다. 터널 산화막 공정 온도에 대한 평가 결과 온도 증가 시 swing 및 신뢰성 항목인 bake 결과가 개선됨을 확인하였다.

고휘도 휴대용 디스플레이를 위한 액정소자의 폴리스타일렌 배향막에 관한 연구 (Chemically modulated polystyrene surface using various ion beam exposure time for liquid crystal alignment of high brightness mobile display)

  • 조명현;이호영
    • 한국위성정보통신학회논문지
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    • 제9권3호
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    • pp.22-26
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    • 2014
  • 본 연구에서는 액정의 수직배향을 달성하기 위해서 특별히 제조된 폴리스타일렌 박막에 다양한 이온빔을 조사하는 방법을 사용하였다. 일반적으로 폴리스타일렌 수지는 통상의 폴리이미드 계열의 수지에 비해서 박막코팅을 하였을 때 보다 우수한 투과율을 나타내므로, 투과형 디스플레이로 사용되는 LCD의 배향막 재료로 더 적합하다고 생각되었다. 특히 고휘도이면서 저전력 사양을 달성하여야 하는 휴대용 디스플레이에서의 응용가능성이 기대되었다. 그러나, 일반적인 러빙법에 의한 배향처리에 대해서는 액정분자의 배향성이 폴리이미드 계열의 재료에 비해서 열등하여 사용되지 못하였다. 본 연구에서는 폴리스타일렌 계열의 박막재료를 배향막으로 가공함에 있어서 새로운 이온빔 조사법에 의한 비접촉식 배향법을 사용하였으며, 배향성과 액정분자의 프리틸트각 특성에 대해서 정량적인 결과를 얻을 수 있었다. 실험에서는 폴리스타일렌 수지에 이온빔의 조사시간을 15초까지 변화시키면서 액정분자의 배향성 및 프리틸트각의 특성을 측정하였다. 측정결과 스마트폰 및 휴대용 정보단말기 등의 디스플레이에 적합한 고투과율 액정표시소자의 구현이 가능하였다.

에어로졸 증착법(Aerosol Depostion method)에 의한 $Ba(Zr_{0.85}Y_{0.15})O_{3-\delta}$-NI 수소분리막 제조 ($Ba(Zr_{0.85}Y_{0.15})O_{3-\delta}$-NI Composite Membrane for Hydrogen Separation by Aerosol Deposition Method)

  • 박영수;최진섭;변명섭;김진호;황광택
    • 한국수소및신에너지학회논문집
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    • 제21권4호
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    • pp.271-277
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    • 2010
  • $(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

중질유 고도정제 부산물의 도로포장용 역청재료로서의 적용성 평가 (Evaluation of Applicability of Heavy Oil Upgrading By-Product (Pitch) as A Pavement Paving Material)

  • 양성린
    • 한국도로학회논문집
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    • 제16권5호
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    • pp.9-18
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    • 2014
  • PURPOSES : The objective of this study is to evaluate the applicability of the pitch, which is produced during SDA petroleum upgrading process, as a pavement paving material. In order for the purpose, the physical and chemical properties of the pitch are analyzed, and then the various plasticizers are applied in the pitch. METHODS : Two types of pitch are selected from oil refinery companies, which are owned the SDA petroleum upgrading process. Also, two types of asphalt binders, PG 64-22 and PG 58-22, are employed to compare with the pitch because these two types of asphalt binders are currently used as paving materials. For the chemical property of the pitch, the composition of SARA (Saturate, Aromatic, Resin, Asphaltene), the elementary composition, and the functional group are analyzed. For the physical property of the pitch, the basic material property tests, such as penetration test, softening point test, flash point test, ductility test, and rotational viscometer test, are performed. Also, the DSR (Dynamic Shear Rheometer) test and the BBR (Bending Beam Rheometer) test are conducted using asphalt binder specimens obtained by both short term aging (Rolling Thin Film Oven, RTFO) and long term aging (Pressure Aging Vessel, PAV) processes. The rheological property of each pitch type is evaluated as a function of temperatures and loading cycles. PG 64-22 asphalt binder is used as a control material. RESULTS AND CONCLUSIONS : The Pitch may not be suitable for the pavement paving material without modifications, but the pitch can be used as alternatives of modified addictive or asphalt. If low molecular component, such as saturate and aromatic components, are added in the pitch based on the development of various plasticizers, it has a strong possibility for the pitch to be used as a alternative. However, in order to verify the performance property of the pitch, further research is needed.

펨토초 레이저 펄스를 이용한 환원된 그래핀의 최소 선폭 패턴 구현에 관한 연구 (The study of optimal reduced-graphene oxide line patterning by using femtosecond laser pulse)

  • 정태인;김승철
    • 한국융합학회논문지
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    • 제11권7호
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    • pp.157-162
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    • 2020
  • 최근 레이저를 이용하여 환원된 친환경 그래핀 패턴 기술(Laser Induced Graphene, LIG)은 간단하고 효율적으로 원하는 형태로 다양한 기판 위에 패터닝하는 것이 가능하여 신축 유연 전자 소자, 박막 형태의 에너지 저장 소자 등과 같이 새로운 친환경 전자 소자 제작에 많이 활용되고 있다. 이러한 그래핀 패턴 구조를 이용한 전자 소자의 성능과 효용성을 높이기 위해서는 그래핀 고유의 2차원 특성을 유지하면서 가능한 최소한의 선폭을 구현할 수 있는 최적화된 레이저 패터닝 조건에 대한 연구가 필수적이다. 본 논문에서는 최근 레이저 그래핀 패턴 연구에서 많이 사용되는 Ti:sapphire 펨토초 레이저를 이용해서 그래핀 광-열 산화반응을 분석하여 최적화된 그래핀의 최소선폭을 구현하였다. 레이저 에너지의 확산 효과를 최소화하기 위하여 레이저 광강도와 레이저 스캔 속도를 조절하여 최적의 그래핀 특성을 나타내는 패턴을 연구하였으며 18 ㎛의 집속된 빔을 이용하여 최소 30 ㎛의 이차원 그래핀 선폭을 구현하였다.

초박형 태양전지 제작에 Porous Silicon Layer Transfer기술 적용을 위한 전기화학적 실리콘 에칭 조건 최적화에 관한 연구 (Optimization of Electrochemical Etching Parameters in Porous Silicon Layer Transfer Process for Thin Film Solar Cell)

  • 이주영;구연수;이재호
    • 마이크로전자및패키징학회지
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    • 제18권1호
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    • pp.23-27
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    • 2011
  • 전기화학적 에칭을 이용한 다공성 실리콘 이중층 형성은 초박형 태양전지 제작에서 PS layer transfer 기술을 적용하기 위한 선행 공정이다. 다공성 실리콘 층의 다공도는 전류밀도와 에칭용액 내 불산의 농도를 조절하여 제어할 수 있다. 전기화학적 에칭을 이용한 다공성 실리콘 형성을 위하여 비저항 $0.01-0.02\;{\Omega}{\cdot}cm$의 p-type (100)의 실리콘 웨이퍼를 사용하였으며, 에칭용액의 조성은 HF (40%) : $C_2H_5OH$(99 %) : $H_2O$ = 1 : 1 : 2 (volume)으로 고정하였다. PS layer transfer 기술에 사용되는 다공성 실리콘 이중층을 형성하기 위해서 에칭 도중 전류밀도를 낮은 전류밀도 조건에서 높은 전류밀도 조건으로 변환하여 low porosity layer 하부에 high porosity layer를 형성할 수 있다.