• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.82-86
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• 2000

Humidity sensors using $TiO_2$ thin films were fabricated on the multi-electrode device by Sol-Gel method and their wettability, surface potential decays and humidity sensing characteristics were investigated. Contact angle of thin films was $28^{\cic}\;at\; 400^{\circ}C$ and surface potential decayed rapidly at $400^{\circ}C$. The specimen showed best humidity sensing characteristics at $400^{\circ}C$. From the results, they were confirmed that humidity sensing characteristics of thin films have connection with contact angle and surface potential decays.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.35-39
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• 2001

The purpose of this paper is improvement the piezoelectric of Polyvinylidene fluoride(PVDF) organic thin films is fabricated by vapor deposition method. The piezoelectric of PVDF organic thin films attributed to dipole orientation in crystalline region. Also, the piezoelectric characteristic reduced that dipole moments orientation in crystalline region interfered with impurity carriers. Therefore, PVDF organic thin films fabricated with high substrate temperature condition for crystallinity improvement. The crystallinity of PVDF organic thin films fabricated by this condition increase from 47 to 67.8%. The ion density of PVDF organic thin films fabricated by substrate temperature variation from $30^{\circ}C$ to $105^{\circ}C$ decreased from $1.62{\times}10^{16}cm^3$ to $6.75{\times}10^{11}cm^3$ when temperature and frequency were $100^{\circ}C$, 10Hz, respectively. The $d_{33}$ and piezo-voltage coefficient of PVDF organic thin films increased from 20pPC/N to 33pC/N and $162.9{\times}10^{-3}V{\cdot}m/N$ to $283.2{\times}10^{-3}V{\cdot}m/N$, respectively. For the sake of the applications of piezoelectric sensor, we analyzed the output voltage characteristic as a function of the distance between an oscillator of 28kHz and PVDF organic thin film transducer. From this, we found that the output voltage is inversely proportional to the distance. At this time, the period was about $35.798{\mu}s$ and equal the oscillator frequency.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.52-55
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• 2005

Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of $10.5{\mu}{\Omega}cm$ to $2.84{\times}10^{4}{\mu}{\Omega}cm$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of $0{\sim}150^{\circ}C$. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.273-280
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• 2008

Monolith aperture-type oxygen sensors with simple structure of YSZ(pin-hole)/Pt/ YSZ(solid electrolyte)/Pt were fabricated by co-firing technique. To enhance the yield of productivity, a couple of YSZ green sheets for diffused barrier and solid electrolyte were prepared by tape-casting and co-firing method. The limit current characteristics of the oxygen sensors were measured between 500 and $650^{\circ}C$ The heating temperature of $600^{\circ}C$ was optimum as a portable oxygen sensor in the range of oxygen concentration from 0 to 75 vol%. Linear proficiency of limit current behavior as a function of oxygen concentration was controlled by the variation of aperture dimension. The fabricated oxygen sensors showed the stable sensing output for 30 days. Gas leakage in bonding area due to warping, cracking and thermal cycling was not found in the period.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.125-128
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• 2003

Low-velocity impact damage is a major concern in the design of structures made of composite materials, because impact damage is hidden inside and cannot be detected by visual inspection. The piezoelectric thin film sensor can be used to detect variations in structural and material properties for structural health monitoring. In this paper, the PVDF and PZT sensors were used for monitoring impact damage initiation in Gr/Ep composite panel to illustrate this potential benefit. A series of impact test at various impact energy by changing impact mass and height is performed on the instrumented drop weight impact tester. The wavelet transform(WT) is used to decompose the piezoelectric sensor signals in this study. Test results show that the particular waveform of sensor signals implying the damage initiation and development are detected above the damage initiation impact energy. And it is found that both PZT and PVDF sensors can be used to detect the impact damage.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.13-18
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• 2006

[ $SnO_2$ ] and ZnO nanostructures were grown on the surface of thin film by heat treatment of metal Sn, Zn under Ar gas flow and $O_2$ at atmospheric pressure, respectively. The sensitivity of the $SnO_2$ thin film device on which grown nanowires to CO gas(5,000 ppm) was 50 % at the operating temperature of $200^{\circ}C$. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced(73 % at $150^{\circ}C$ ). The sensitivity of the ZnO nanorods device using Cu as catalysts to NOx gas was 90 % at the operating temperature of $200^{\circ}C$. It was found that the sensitivity to CO and NOx gases for the device on which grown nanostructures was much higher than those for general thin film device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1023-1027
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• 2009

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.1-5
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• 2018

Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.