• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.171.1-171.1
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• 2009

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1195-1202
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• 1996

To prepare the dielectric thin films of (Pb1-xSrx)TiO3 (x=0.1, 0.2, 0.3, 0.35, 0.5) by the sol-gel process titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) and Pb Sr, acetate were used therefore the thin films were fabricated by dip-coating method. Stability of the sol decreased with addition of Sr content thin films could be fabricated up to 35mol% Over this range precipitation of sol occured thin films couldn't be obtained. Transmittance of thin films at visible range decreased with the increase of heat-treatment temperature but exhibited transmit-tance above 60% in all case. Moreover transmittance of thin films at visible range slightly increased with of addition of Sr,. When thin film containing 30 mol% srontium was heated at 600℃ the best perovskite phase was obtained. The dielectric constant (ε) was 280 and dielectric loss factor (tan δ) was 0.021 and curie tempera-ture (Tc) decreased with the increase of addition of Sr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.926-929
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• 2012

The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.768-771
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• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.696-699
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• 2003

In this study, we suggested the model to precisely evaluate the ferroelectric hysteresis loop, using the modified Sawyer-Tower circuit and the ferroelectric capacitor with a MDFM(Metal-Dielectric-ferroelectric-Metal) structure. The mathematical expression of dipole polarization is applied to the numerical integration algorithm, and the fatigue property can be considered including the dielectric layer between ferroelectrics and bottom electrode. The validity of our model is proved comparing the estimated value of our model and the measured results of PLT(10) thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.