Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Microstructure and Microwave Dielectric Properties of ZrTiO4 Thin Films Prepared by Metal-organic Decomposition

금속유기분해 법으로 제조한 ZrTiO4 박막의 미세구조 및 고주파 유전특성

  • 박창순 (군산대학교 신소재공학과) ;
  • 선호정 (군산대학교 신소재공학과)
  • Published : 2009.01.01
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Abstract

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

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References

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