Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of RTA on the Properties of SBNO Thin Film

SBNO 박막의 특성에 미치는 RTA 영향

  • Kim, Jin-Sa (Department of Mechatronics, Chosun Colleng of Science & Technology)
  • 김진사 (조선이공대학교 메카트로닉스과)
  • Received : 2012.10.05
  • Accepted : 2012.10.12
  • Published : 2012.11.01
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Abstract

The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

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References

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