• Korean Journal of Optics and Photonics
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• v.31 no.6
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• pp.321-327
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• 2020

We investigated the light reflection from thin films coated on substrates. Using a prism with a high refractive index as the incident medium, the phenomena of the total internal reflection (TIR) of the prism/film/substrate system and the light coupling into the optical waveguide formed by the air/film/substrate system were comprehensively studied and compared. If the refractive index of the thin film is greater than that of the substrate, within the TIR region of the substrate, sharp reflection minima occur at specific angles where the waveguide modes are excited, that can be used to accurately measure the refractive index and thickness of a thin film. On the other hand, if the refractive index of the thin film is smaller than that of the substrate, such waveguide modes do not exist. In this case, although not so distinct as a bulk medium, the TIR effect of the thin film is still observable, accompanied by an interference pattern. In this study we analyzed the overall reflection phenomena occurring from prism/film/substrate structures, to investigate the possibility of measuring the refractive index of a thin film in both cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.11-16
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• 2006

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type SiOC thin films. SiOC thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM,$H_{9}C_{3}-Si-CH_{2}-Si-C_{3}H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at $400^{\circ}C$ were analyzed by XRD. The SiOC thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• ETRI Journal
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• v.39 no.3
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1487-1489
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• 2001

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.277-283
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• 2004

To fabricate green sheet of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry, density, and mechanical properties of green sheets have been investigated as a function of amount and composition of organic additives. Measurements of sedimentation and viscosity were employed to determine a proper dispersant and its amount for a well dispersed transparent dielectric powders in non-aqueous system. Green sheets, having various ratios of transparent dielectric powders to transparent dielectric powders＋ binder＋plasticizer and binder to binder＋plasticizer, were fabricated. All the tape casting slurries showed shear thinning effect, that is, the apparent viscosity decreased with the increase of shear rate. It was found that the amount and composition of organic additives were main variables to affect densities and mechanical properties of transparent dielectric green sheets for PDP.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.751-755
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• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.