• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.29-33
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• 2004

The materials showing high structure dispersity have been developed on the quartz base by mechano-chemical technology. Depending on the processing conditions and subsequent applications, the materials produced by mechano-chemical reaction (MCR) showed concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segneto-magnetics, contained a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds was synthesized having thickness up to 10∼50 nm and showing magnetic properties and etc.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.235-241
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• 2005

Incorporation of solid electrodes frequently involves plasma-based processing. The effect of plasma can influence the physical characteristics, depending on the magnitude in plasma. The undesired feature of plasma-induced damage should be prevented in characterizing the ultra-thin materials, such as ultra-thin films and organic monolayers. The current work at first proves the applicability of a liquid phase electrode in the electrical/dielectric properties through comparative work using Al and Hg on ultrathin $Al_2O_3$ films deposited through atomic layer deposition at low temperature: Two types of metals such as Aluminum (Al) and mercury (Hg) were used as electrodes in $Al_2O_3$ thin films in order to investigate the effect of electrode preparation on the current-voltage characteristics and impedance features as a function of thickness in $Al_2O_3$ film thickness. The success of Hg in $Al_2O_3$ thin films is applied to the AC and DC characterization of the organic monolayers obtained using the Langmuir-Blodgett method. From the DC current-voltage characteristics, the diode-like response is found to originate from the bulk response of the organic materials, evidenced by the fact and the capacitance is inversely related to the absolute thickness of organic layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.2
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• pp.65-70
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• 2015

In this paper, the solutions of TE (transverse electric) scattering problems by a conductive strip grating over grounded two dielectric layers are analyzed by applying the PMM (point matching method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the conductive boundary condition apply to analysis of conducting strip. The most normalized reflected powers of the sharp variations in minimum values are scattered in direction of the other angles except incident angle. The numerical results for normalized reflected power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the two dielectric layers, and incident angles. The numerical results of present numericl analysis are shown in good agreement compared to those of the existing papers using FGMM (fourier galerkin moment method).

• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.152-158
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• 2006

In this paper, electromagnetic scattering problems by a resistive strip grating with zero resistivity at the strip-edges on a grounded 2 dielectric layers according as strip width and spacing, relative permittivity, thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floguet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The tapered resistivity of resistive strips varies zero resistivity at strip edges. Then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind. The normalized reflected power with zero resistivity in this paper show in good agreement with those of existing paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• The Journal of Information Technology
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• v.8 no.2
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• pp.77-84
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• 2005

In this paper, electromagnetic scattering problems by a resistive strip grating with tapered resistivity on a grounded dielectric plane according to strip width and spacing, relative permittivity and thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the Fourier-Galerkin Moment Method known as a numerical procedure. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The resistivity of resistive strips in this paper varies from zeroes at one edge to infinite at the other edge, then the induced surface current density on the resistive strip is expanded in a series of Jacobi polynomials of the order ${\alpha}=0.2,\;{\beta}=-0.2$ as a orthogonal polynomials. The numerical results of the geometrically normalized reflected power in this paper are compared with those for the existing perfectly conducting strip. The numerical results of the normalized reflected power for conductive strips case with zero resistivity in this paper show in good agreement with those of existing papers.