• 한국재료학회지
• /
• 제18권4호
• /
• pp.169-174
• /
• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Journal of information and communication convergence engineering
• /
• 제7권1호
• /
• pp.72-77
• /
• 2009

Three different procedures for adding Pd compounds to $SnO_2$ particles have been investigated. These processes are: (1) coprecipitation; (2) dried powder impregnation; and (3) calcined powder impregnation. The microstructures of $SnO_2$ particles have been analyzed by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). In the coprecipitaion method, the process does not restrain the growth of $SnO_2$ particles and it forms huge agglomerates. In the dried powder impregnation method, the process restrains the growth of $SnO_2$ particles and the surfaces of the agglomerates have many minute pores. In the calcined powder impregnation method, the process restrains the growth of $SnO_2$ particles further and the agglomerates have a lot more minute pores. The sensitivity ($S=R_{air}/R_{gas}$) of the $SnO_2$ gas sensor made by the calcined powder impregnation process shows the highest value (S = 21.5 at 5350 ppm of $C_3H_8$) and the sensor also indicates the lowest operating temperature of around $410^{\circ}C$. It is believed that the best result is caused by the plenty of minute pores at the surface of the microstructure and by the catalyst Pd that is dispersed at the surface rather than the inside of the agglomerate. Schematic models of Pd distribution in and on the three different $SnO_2$ particles are presented.

• 한국재료학회지
• /
• 제18권6호
• /
• pp.307-312
• /
• 2008

In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200\;{\AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000\;{\AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{\circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.81-81
• /
• 2009

Non-sintered Alumina films were fabricated via inkjet printing processes without a high temperature sintering process. The packing density of these inkjet-printed alumina films measured around 60%. Polymer resin was infiltrated thru these non-sintered films in order to fill out the 40% of voids constituting the rest of the inkjet-printed films. The concept of inkjet-printed Alumina-Resin hybrid materials was designed in order to be applicable to the ceramic package substrates for 3D-system module integration which may possibly substitute LTCC-based 3D module integration. So, the dielectric properties of these inkjet-printed $Al_2O_3$ hybridmaterialsareofourgreatinterest. We have measured dielectric constant and dissipation factor of the inkjet-printed $Al_2O_3$-resinhybridfilmsbyvaryingtheamountofresininfiltratedthruthe$Al_2O_3$films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.80-80
• /
• 2009

$BaTiO_3$ has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the $BaTiO_3$ layer should be highly dense. In this study, $BaTiO_3$ thick films were prepared by the inkjet printing method using 4 vol.% $BaTiO_3$ colloidal inks and cured at $28^{\circ}C$ for 5 h after infiltration of polymer resin for non-sintered process using 3 vol.% cyanate ester emulsion ink. From the obtained results. packing density was determined to be improved by overlapping rabbit ears which were generated by coffee ring effect. We also calculated the packing densities of the films and correlated these packing densities to the measured permittivity of the films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.307-307
• /
• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 한국전기전자재료학회논문지
• /
• 제20권9호
• /
• pp.798-801
• /
• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 춘계학술대회 논문집
• /
• pp.1442-1445
• /
• 2005

Several test methods, including micro strain/deformation measurement techniques, have been studied to more reliably measure the micro properties in micro/nano materials. Therefore, in this study, the continuous measurement of in-plane tensile strain in micro-sized specimens of thin film materials was introduced using the micro-ESPI technique. TiN and Au thin films 1 and $0.47\;\mu{m}$ thick, respectively, were deposited on the silicon wafer and fabricated into the micro-sized tensile specimens using the electromachining process. The micro-tensile loading system and micro-ESPI system were developed to measure the tensile strain during micro-tensile test. The micro-tensile stress-strain for these materials was determined using the algorithm for continuous strain measurement. Furthermore, algorithm for enhancing the sensitivity to measurement of in-plane tensile strain was suggested. According to the algorithm for enhancement of sensitivity, micro-tensile strain data between interfringe were calculated. It is shown that the algorithm for enhancement of the sensitivity suggested in this study makes the sensitivity to the in-plane tensile strain increase.

• 대한기계학회논문집
• /
• 제19권1호
• /
• pp.219-230
• /
• 1995

The flow characteristics of a two-dimensional offset jet issuing parallel to a rough wall is experimentally investigated by using a split film probe with the modified Stock's calibration method. The mean velocity and turbulent stresses profiles in the up and down-stream locations of the wall-attachment regions are measured and compared with those of the smooth wall attaching offset jet cases. It is found that the wall-attachment region on the rough wall is wider than on the smooth wall for the same offset height and the jet speed. The position of the maximum velocity point is farther away from the wall than that for the smooth wall case because of the thick wall boundary layer established by the surface roughness. It is concluded that the roughness of the wall accelerates the relaxation process to a redeveloped plane wall jet and produces a quite different turbulent diffusion behavior especially near the wall from comparing with the smooth plane wall jet turbulence.

• 한국안광학회지
• /
• 제8권2호
• /
• pp.91-97
• /
• 2003

마이크로웨이브 플라즈마 화학증착법을 이용하여 C-H계에서 메탄 농도를 변화시키면서 각각의 농도 변화에 따른 증착상의 변화 거동을 관찰하였는데 메탄 농도가 증가함에 따라 성장 속도는 증가하지만 다이아몬드 박막내 비다이아몬드 성분의 양이 많아지며 결정성이 떨어졌다. Raman 분광으로부터 D 피크($sp^3$)와 G 피크($sp^2$)의 상대적인 세기로부터 $sp^3/sp^2$, 수소함량에 대한 경향성을 알 수가 있었으며 FTIR 분광으로부터 수소함량은 16~37%, $sp/sp^2$은 0.22~1.14로 변화하였다. 이들 결과로부터 최적의 제작조건은 메탄 분압비 13.8%임을 알 수가 있었다.