• 한국재료학회지
• /
• 제13권2호
• /
• pp.88-93
• /
• 2003

Co/Ti bilayer structure in Co salicide process helps to the improvement of device speed by lowering contact resistance due to the epitaxial growth of $CoSi_2$layers. We investigated the epitaxial growth and interfacial mass transport of $CoSi_2$layers formed from $150 \AA$-Co/Ti structure with two step rapid thermal annealing (RTA). The thicknesses of Ti layers were varied from 20 $\AA$ to 100 $\AA$. After we confirmed the appropriate deposition of Ti film even below $100\AA$-thick, we investigated the cross sectional microstructure, surface roughness, eptiaxial growth, and mass transportation of$ CoSi_2$films formed from various Ti thickness with a cross sectional transmission electron microscopy XTEM), scanning probe microscopy (SPM), X-ray diffractometery (XRD), and Auger electron depth profiling, respectively. We found that all Ti interlayer led to$ CoSi_2$epitaxial growth, while $20 \AA$-thick Ti caused imperfect epitaxy. Ti interlayer also caused Co-Ti-Si compounds on top of $CoSi_2$, which were very hard to remove selectively. Our result implied that we need to employ appropriate Ti thickness to enhance the epitaxial growth as well as to lessen Co-Ti-Si compound formation.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 G
• /
• pp.3060-3063
• /
• 1999

We made a multi-layer conveyor sterilizing system using UV rays to prolong a storage period of dried marine products. The system is composed of 5 layer conveyor belt of 3 m long each, thus 15 m long in total. It is designed to radiate UV rays for 10 minutes the dried marine products, and can process 300 kg/hour. Eight UV lamps of 30 cm long and 15 W of power with 254 nm wave length are installed in parallel, 15 cm high above in each belt, and 40 lamps in total. The whole system is covered by 1 mm thick metal plates to block the UV rays except a front side which is covered with 5 mm thick plastic plates coated with UV protection film to survey inside of the system. A sterile ratio is about 99.97% with 10 minutes sterilization using this system.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1990년도 추계학술대회 논문집
• /
• pp.98-101
• /
• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

• 대한금속재료학회지
• /
• 제47권5호
• /
• pp.322-329
• /
• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 한국주조공학회지
• /
• 제27권2호
• /
• pp.88-94
• /
• 2007

General criteria for the risering design of steel castings and commercial codes for the flow and solidification analysis were used to design the optimized risering in V-process. Three type of specimens were chosen including thin plates and a thick disc. Sided riser installed in the front of a plate casting was effective to prevent the shrinkage defects and to increase the casting yield ratio. Exothennic sleeve and chill were also effective. It was possible to apply the general criteria for the risering design of steel castings to V-process. Temperature of a mold surface was expected to rise over $1,000^{\circ}C$ in the temperature calculation considering radiation effect of molten metal in the mold. Since weakening temperature of the vinyl used in V-process is about $70^{\circ}C$, it should be emphasized that a proper coating of the vinyl film is necessary to prevent the possibility of burning out of the vinyl by the molten metal.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.543-543
• /
• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• 한국표면공학회지
• /
• 제51권1호
• /
• pp.62-70
• /
• 2018

Sulfamate plating solution containing a small amount of chloride bath was fabricated to study the properties of the electrodeposited Ni thin films. Effects of the changes of current density and additive concentration on current efficiency, residual stress, surface morphology and microstructure of Ni thin films electrodeposited from Ni sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 95%, independent of the changes of current density and saccharin concentration in the baths. Residual stress of Ni thin film was appeared to be the compressive stress modes in the range of $5{\sim}30mA/cm^2$ current density. Maximum compressive stress was observed at the current density of $10mA/cm^2$. Compressive stress values of Ni thin/thick films were increased to be about -85~-100 MPa with increasing saccharin concentration from 0 to 0.0195 M(4 g/L). Surface morphology was changed from smooth to nodule surface appearance with increasing the current density. Smooth surface morphology of Ni thin films electrodeposited from the baths containing saccharin was observed, independent of the saccharin concentration. Ni thin/thick films consist of FCC(111), FCC(200), FCC(220), FCC(311) and FCC(222) peaks. It was revealed that the FCC(200) peak of Ni thin films is the preferred orientation in the range of $5{\sim}30mA/cm^2$ current density. The intensity of FCC(200) peak was gradually decreased and the intensity of FCC(111) peak was increased with increasing saccharin concentration in the baths.

• Nano
• /
• 제13권11호
• /
• pp.1850126.1-1850126.10
• /
• 2018

Flexible strain sensors, as the core member of the family of smart electronic devices, along with reasonable sensing range and sensitivity plus low cost, have rose a huge consumer market and also immense interests in fundamental studies and technological applications, especially in the field of biomimetic robots movement detection and human health condition monitoring. In this paper, we propose a new flexible strain sensor based on thick CVD graphene film and its low-cost fabrication strategy by using the commercial adhesive tape as flexible substrate. The tensile tests in a strain range of ~30% were implemented, and a gage factor of 30 was achieved under high strain condition. The optical microscopic observation with different strains showed the evolution of cracks in graphene film. Together with commonly used platelet overlap theory and percolation network theory for sensor resistance modeling, we established an overlap destructive resistance model to analyze the sensing mechanism of our devices, which fitted the experimental data very well. The finding of difference of fitting parameters in small and large strain ranges revealed the multiple stage feature of graphene crack evolution. The resistance fallback phenomenon due to the viscoelasticity of flexible substrate was analyzed. Our flexible strain sensor with low cost and simple fabrication process exhibits great potential for commercial applications.

• 마이크로전자및패키징학회지
• /
• 제29권1호
• /
• pp.43-47
• /
• 2022

본 연구에서는 보일러 등에 적용을 하기 위하여 물속에 담군 채 가열할 수 있는 친환경 박막형 히터에 대한 결과를 보고한다. 장수명을 확보하기 위하여 소재 안정성이 높은 Mo 박막(40 nm)을 마그네트론 스퍼터법을 이용하여 Glass 기판상에 증착하였으며 후속 공정 진행 시 Mo 박막의 부식을 방지하기 위하여 상부에 ZnO 박막 (60 nm)을 형성하였다. 이후 투명 접착성을 가지는 PVB (Polyvinyl Butyral)를 이용하여 ZnO 박막 상부에 또 다른 Glass기판을 올려두고 열풍건조기 내에서 150℃의 온도에서 2시간동안 PVB를 경화시키며 접착시켜 Glass/Mo/ZnO/Glass 구조의 수중 히터를 완성하였다. 이렇게 제작한 발열체를 수중에 담근 후 발열 시 물의 온도가 2분 내 50℃까지 상승되는 것을 확인하였으며 미미한 수준의 저항증가가 발생하며 구조적 안정성 또한 확보되었다. 인가 전압의 세기에 따라 발열체의 온도가 제어되기 때문에 보일러에 적용할 때 사용자가 설정하는 온도를 용이하게 제어할 수 있을 것이라 기대된다. 마지막으로, 본 연구에서 제작한 박막형 히터는 반투명의 특성을 가져 심미성을 부여할 수 있어 제품의 부가가치를 더욱 높일 수 있을 것으로 기대된다.

• 한국자기학회지
• /
• 제18권5호
• /
• pp.174-179
• /
• 2008

자장감응도가 약 0.8 %/Oe인 거대자기저항-스핀밸브(GMR-SV) 소자를 이용하여 두께 200 nm의 Mg-박막과 두께 $50\;{\mu}m$의 Mg- 포일이 물속에서 녹는 Mg 용해도 측정 센서 시스템을 제작하였다. Mg-박막과 Mg-포일이 각각 용해할 때, 증가하는 저항으로 인한 전류 감소가 솔레노이드 내부의 자기장의 변화를 일으켜 GMR-SV 센서로 감지되었다. Mg이 음용수와 반응하여 발생하는 방울수와 산화환원전위(ORP)의 시간 변화율을 측정하여 일반 수돗물과 증류수의 것과 비교하였다. 미네랄 Mg함량이 다른 3가지 물에서 Mg 용해속도가 큰 차이를 보였다. 또한 Mg-박막 일 경우, 출력신호의 자기저항 값이 최소 $43.6\;{\Omega}$로 떨어졌으며 자기저항의 급격한 변화가 5분 이내에 나타났고, 그 변화율은 ${\Delta}R/{\Delta}t=0.18\;{\Omega}/min$ 이었다. Mg-포일 일 경우, 20분 이내에 $0.3\;{\Omega}/min$이었다. 음용수에 담긴 Mg-박막이나 Mg-포일의 용해시간과 용해속도를 측정하여 알칼리 환원수로 변환을 감지하는 미네랄 Mg 용해센서 개발이 가능할 것으로 사료된다.