• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.291-295
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• 1999

$NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.903-906
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• 2011

The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.281-281
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• 2007

Low Temperature Co-fired Ceramic (LTCC) technology has been used in electronic device for various functions. LTCC technology is to fire dielectric ceramic and a conductive electrode such as Ag or Cu thick film below the temperature of $900^{\circ}C$ simultaneously. The glass-ceramic has been widely used for LTCC materials due to its low sintering temperature, high mechanical properties and low dielectric constants. To obtain the high strength, addition of filler, the microstructure should have various crystals and low pores in a composite. In this study, two glass frits were mixed with different alumina size(0.5, 2, 3.7um) and sintered at the range of $850{\sim}950^{\circ}C$. The microstructure, crystal phases, thermal and mechanical properties of the composites were investigated using FE-SEM, XRD, TG-DTA, Dilatomer. When the particle size of $Al_2O_3$ filler increased, the starting temperatures for the densification of the sintered bodies, onset point of crystallization, peak crystallization temperature in the glass-ceramic composites decreased gradually. After sintered at $900^{\circ}C$, the glass frits were crystallized as $CaAl_2Si_2O_8\;and\;CaMgSi_2O_6$. The purpose of our study is to understand the relationship between the $Al_2O_3$ particle size and thermal properties in composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.88-93
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• 2021

SAW (Submerged Arc Welding) is often used for ship construction or welding pressure vessels and involves spraying a flux in a powder form to a welding site to a certain thickness and continuously supplying electrode wires therein. This welding method enables high current welding up to 1,500 to 3,000 A. Arc efficiency is higher than 95% and the technique allows clean work as it creates less welding fume, which is composed of fine metal oxide particles, and the arc beam is not exposed. In this study, SM490C-TMC thick plates were heterogeneously welded by SAW. Mechanical properties of welds were measured, and welds were assessed macroscopically and for adhering magnetic particles. The following conclusions were drawn. Bending tests showed no spots exploded on sample surfaces or any other defect, and plastic deformation testing confirmed sufficient weld toughness. These results showed the 1F welding method has no shortcomings in terms of bending performance.

• Journal of Electrochemical Science and Technology
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• v.13 no.1
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• pp.112-119
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• 2022

Molten carbonate fuel cells (MCFCs) are environmentally friendly, large-capacity power generation devices operated at approximately 650℃. If MCFCs are to be commercialized by improving their competitiveness, their cell life should be increased by operating them at lower temperatures. However, a decrease in the operating temperature causes a reduction in the cell performance because of the reduction in the electrochemical reaction rate. The cell performance can be improved by introducing a coating on the cathode of the cell. A coating with a high surface area expands the triple phase boundaries (TPBs) where the gas and electrolyte meet on the electrode surface. And the expansion of TPBs enhances the oxygen reduction reaction of the cathode. Therefore, the cell performance can be improved by increasing the reaction area, which can be achieved by coating nanosized LiCoO₂ particles on the cathode. However, although a coating improves the cell performance, a thick coating makes gas difficult to diffuse into the pore of the coating and thus reduces the cell performance. In addition, LiCoO₂-coated cathode cell exhibits stable cell performance because the coating layer maintains a uniform thickness under MCFC operating conditions. Therefore, the performance and stability of MCFCs can be improved by applying a LiCoO₂ coating with an appropriate thickness on the cathode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.25-29
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• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.30 no.1
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• pp.52-59
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• 2008

The geometric design of an implant surface may play an important role in affecting early osseointegration. It is well known that the porous surfaced implant had much benefits for the osseointegration and the early stability of implant. However, the porous surfaced implant had weakness from the transgingival contamitants, and it resulted in alveolar bone loss. The other problem identified with porous surface implant is the loss of physical properties resulting from the bead sintering process. In this study, we developed the new bead coating implant to overcome the disadvantages of porous surfaced implant. Ti-6Al-4V beads were supplied from STARMET (USA). The beads were prepared by a plasma rotating electrode process (PREP) and had a nearly spherical shape with a diameter of 75-150 ${\mu}m$. Two types of titanium implants were supplied by KJ Meditech (Korea). One is an external hexa system (External type) and the other is an internal system with threads (Internal type). The implants were pasted with beads using polyvinylalcohol solution as a binder, and then sintered at 1250 $^{\circ}C$ for 2 hours in vacuum of $10^{-5}$ torr. The resulting porous structure was 400-500 ${\mu}m$ thick and consisted of three to four bead layers bonded to each other and the implant. The pore size was in the range of 50-150 ${\mu}m$ and the porosity was 30-40 % in volume. The aim of this study was to evaluate the osseointegration of the newly developed dental implant. The experimental implants (n=16) were inserted in the unilateral femur of 4 mongrel dogs. All animals were killed at 8 weeks after implantation, and samples were harvested for hitological examination. All bead coated porous implants were successfully osseointegrated with peripheral bone. The average bone-implant contact ratios were 84.6 % (External type) and 81.5 % (Internal type). In the modified Goldner's trichrome staining, new generated mature bones were observed at the implant interface at 8 weeks after implantation. Although, further studies are required, we could conclude that the newly developed vacuum sintered Ti-6Al-4V bead coating implant was strong enough to resist the implant insertion force, and it was easily osseointegrated with peripheral bone.