• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.774-779
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• 2013

We synthesized the solution processible monodispersed $TiO_2$ crystalline nano-sol with ~ 5 nm in size by sol-gel method. Through the spin-coating of crystalline $TiO_2$ nano-sol at low processing temperature, we could make even blocking interlayer on the rough FTO transparent electrode substrate. The rough FTO surface could be gradually smoothed by the spin-coating of nano-crystalline $TiO_2$ sol based blocking interlayer. The 1, 2.5, 5, and 10 wt% of nanocrystalline $TiO_2$ sol formed 29, 38, 62, and 226 nm-thick of blocking interlayer in present experimental condition, respectively. The 5 and 10 wt% of $TiO_2$ nano-sol could effectively fill up the valley part of bare FTO with 48.7 nm of rms (root mean square) roughness and consequently enabled the ZnO to be grown to vertically aligned one dimensional nanorods on the flattened blocking interlayer/FTO substrate.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.3
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• pp.283-291
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• 2011

Polymer electrolyte membrane fuel cells (PEMFCs) use the bipolar plate of various materials between electrolyte and contact electrode for the stable hydrogen ion exchange activation. The bipolar plate of various materials has representatively graphite and stainless steel. Specially, stainless steels have advantage for low cost and high product rate. In this study, SUS 316 was effectively coated with 600 nm thick F-doped tin oxide (SnOx:F) by electron cyclotron resonance-metal organic chemical vapor deposition and investigated in simulated fuel cell bipolar plates. The results showed that an F-doped tin oxide (SnOx:F) coating enhanced the corrosion resistance of the alloys in fuel cell bipolar plates, though the substrate steel has a significant influence on the behavior of the coating. Coating SUS 316 for fuel cell bipolar plates steel further improved the already excellent corrosion resistance of this material. After coating, the increased ICR values of the coated steels compared to those of the fresh steels. The SnOx:F coating seems to add an additional resistance to the native air-formed film on these stainless steels.

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.110-115
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• 2016

We prepared a working electrode (WE) coated with 0 ~ 50 nm-thick indium gallium zinc oxide(IGZO) by using RF sputtering to improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC). Transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS) were used to analyze the microstructure and composition of the IGZO layer. UV-VIS-NIR spectroscopy was used to determine the transparency of the WE with IGZO layers. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with IGZO layer. From the results of the microstructural analysis, we were able to confirm the successful deposition of an amorphous IGZO layer with the expected thickness and composition. From the UV-VIS-NIR analysis, we were able to verify that the transparency decreased when the thickness of IGZO increased, while the transparency was over 90% for all thicknesses. The photovoltaic results show that the ECE became 4.30% with the IGZO layer compared to 3.93% without the IGZO layer. As the results show that electron mobility increased when an IGZO layer was coated on the $TiO_2$ layer, it is confirmed that the ECE of a DSSC can be enhanced by employing an appropriate thickness of IGZO on the $TiO_2$ layer.

• Journal of the Korean Electrochemical Society
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• v.17 no.2
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• pp.79-85
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• 2014

Silicon (Si) has been investigated as promising negative-electrode (anode) materials because its theoretical specific capacity of 4200 mAh/g for $Li_{4.4}Si$ is far higher than that of carbonaceous anodes in current commercial products. However, in practice, the application of Si to Li-ion batteries is still quite challenging because Si suffers from severe volume expansion and contraction and lead to a continuous solid electrolyte interphase (SEI)-filming process by cracking of Si. This process consumes the limited $Li^+$ source, builds up thick and unstable SEI layer on the Si active materials, and will eventually disable the cell. Since unstable SEI reduces electrochemical performance and thermal stability of the Si anode, the surface chemistry of the anode should be modified by using a functional additive. It is found that lithium bis(oxalato)borate (LiBOB) as an additive effectively protected the Si anode surface, improved capacity retention when stored at $60^{\circ}C$, and alleviated exothermic thermal reactions of fully lithiated Si anode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Journal of Sensor Science and Technology
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• v.20 no.5
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• pp.317-321
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• 2011

A Micro platform for micro gas sensor consisted of micro heater, insulator, and sensing electrode on 2 ${\mu}m$ thick $SiN_x$ membrane. Three types of micro platforms were designed and fabricated with membrane sizes. Total size of micro platform was 2.6 mm by 2.6 mm. Measured power consumptions were 28 mW, 28 mW, and 32.5 mW for Type 1, Type 2, and Type 3. At this moment, temperatures of membranes on the platforms were $295^{\circ}C$, $297^{\circ}C$, and $296^{\circ}C$, respectively. Fabricated micro platform considered appropriate to apply for low power consumption micro gas sensor. Micro gas sensors were prepared by the sequence that $SnO_2$ nanopowder pastes were dropped on membrane of Type 1 platforms, dried in oven, heat-treated with micro heaters in platforms. One of the micro gas sensors was tested for gas response to 1157 ppm, 578 ppm, and 231 ppm of methane and 1.68 ppm, 0.84 ppm, and 0.42 ppm of $NO_2$.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.163-167
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• 2001

The rotation of uniaxial anisotropy field of 700 ${\AA}$ thick sputtered NiFe thin film due to magnetic annealing was investigated. NiFe film was annealed in a magnetic field which is perpendicular to the initial induced uniaxial anisotropy field. The NiFe film becomes nearly isotropic after 1 hour annealing at 160 $^{\circ}C$. With increase of annealing temperature over 160 $^{\circ}C$, the film gets uniaxial anisotropy field again. An abrupt increase of H$\sub$c/ was observed with annealing temperature over 400 $^{\circ}C$. The X-ray diffraction analysis and Auger electron spectroscopy with Ar ion etching showed extensive grain growth in NiFe film with (111) texturing and interdiffusion with adjacent Au electrode layer by 400 $^{\circ}C$ magnetic annealing.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.50-58
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• 2000

A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.