• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of the Korean Institute of Gas
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• v.11 no.1 s.34
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• pp.29-33
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• 2007

This study investigates the use of $TiO_{2},\;Pd,\;Pt$, and In which greatly improves a sensitivity to trimethylamine gas. The metal-$SnO_{2}$ thick films were prepared by screen-printing method onto $Al_{2}O_{3}$ substrates with platinum electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of detecting gas concentration. This was then used to detect trimethylamine, dimethylamine, and ammonia vapours within the concentration range of 100-1000ppm. The gas sensing properties of metal-$SnO_{2}$ mixed thick films depended on the content and variety of metal. It was found that sensitivity and selectivity of the films dopped with 1 wt% Pd and 10 wt% $TiO_{2}$ for trimethylamin gas showed the best result at $250^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.6
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• pp.4013-4018
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• 2014

A 0.45 $cm^2$ DSSC device with a glass/FTO/blocking layer/$TiO_2$/N719(dye)/electrolyte/50 nm-Pt/50 nm-Au/FTO/glass was prepared to examine the stability of the Au/Pt bilayered counter electrode (CE) with electrolyte and the energy conversion efficiency (ECE) of dye-sensitized solar cells (DSSCs). For comparison, a 100 nm-thick Pt only CE DSSC was also prepared using the same method. The photovoltaic properties, such as the short circuit current density ($J_{sc}$), open circuit voltage ($V_{oc}$), fill factor (FF), and ECE, were checked using a solar simulator and potentiostat with time after assembling the DSSC. The microstructure of the Au/Pt bilayer was examined by optical microscopy after 0~25 minutes. The ECE of the Pt only CE-employed DSSC was 4.60 %, which did not show time dependence. On the other hand, for the Au/Pt CE DSSC, the ECEs after 0, 5 and 15 minutes were 5.28 %, 3.64 % and 2.09 %, respectively. The corrosion areas of the Au/Pt CE determined by optical microscopy after 0, 5, and 25 minutes were 0, 21.92 and 34.06 %. These results confirmed that the ECE and catalytic activity of Au/Pt CE decreased drastically with time. Therefore, a Au/Pt CE-employed DSSC may be superior to the Pt only CE-employed one immediately after integration of the device, but it would degrade drastically with time.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of Korean Tunnelling and Underground Space Association
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• v.16 no.6
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• pp.599-614
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• 2014

When tunnelling with TBM (Tunnel Boring Machine), accessibility to tunnel face is very limited because tunnel face is mostly occupied by a bunch of machines. Existing techniques that can predict ground condition ahead of TBM tunnel are extremely limited. In this study, the TBM Resistivity Prediction (TRP) system has been developed for predicting anomalous zone ahead of tunnel face utilizing electrical resistivity. The applicability and prediction accuracy of the developed system has been verified by performing field tests at subway tunnel construction site in which an EPB (Earth Pressure Balanced) shield TBM was used for tunnelling work. The TRP system is able to predicts the location, thickness and electrical properties of anomalous zone by performing inverse analysis using measured resistivity of the ground. To make field tests possible, an apparatus was devised to attach electrode to tunnel face through the chamber. The electrode can be advanced from the chamber to the tunnel face to fully touch the ground in front of the tunnel face. In the 1st field test, none of the anomalous zone was predicted, because the rock around the tunnel face has the same resistivity and permittivity with the rock ahead of tunnel face. In the 2nd field test, 5 m thick anomalous zone was predicted with lower permittivity than that of the rock around the tunnel face. The test results match well with the ground condition predicted, respectively, from geophysical exploration, or directly obtained either from drilling boreholes or from daily observed muck condition.

• Radiation Oncology Journal
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• v.5 no.1
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• pp.49-58
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• 1987

Hypertermia for the treatment of cancer has been introduced for a long time and the biological effect for the use of hyperthermia to treat malignant tumors has been well established and encouraging clinical results have been obserbed. Unfortunately, however, the engineering or technical aspects of hyperthermia for the deep seated tumors has not been satisfactory. We developed the radiofrequency capactive hyperthermia device (Greenytherm-GY8) in cooperation with Yonsei Cancer Center and Green Cross Medical Corporation. It was composed with $8{\sim}10MHz$ RF generator, capacitive electrode, matching system, cooling system, temperature measuring system and control PC computer. The thermal profile was investigated in agar phantom, animals and in human tumors, heated with capactivie RF device. Deep and homogeneous heating could be achieved in a large phantom of 25cm diameter and 19cm thick when heated with a pair of 23cm diameter electrodes, coupled to both bases of the phantom, when the size of the two electrodes was not the same, the region near the smaller electrode was preferentially heated. It was, therefore, possible to control the depth of heating by choosing proper size of electrodes. Therapeutic temperature $(42^{\circ}C{\sim}43^{\circ}C)$ could be obtained in the living animal experiments. Indications are that deep heating of humn tumors might be achieved with the capacitive method, provided that subcutaenous fat layer is cooled by temperature controlled bolus and large size of electrodes.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.120-125
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• 2002

AC powder EL devices were fabricated by screen printing method with the dielectric materials in insulating layer and the electrical resistivity of rear electrode. Brightness and current density were measured at voltage range of 50∼300 $V_{rms}$ to estimate optoelectrical properties of AC powder EL devices, respectively. Frequency generator was used as system producing frequency and voltage of a sine wave. Brightness and current density were measured by luminometer and multimeter. Also, dielectric constant for dielectric layer was measured by impedance analyser after preparing thick film. Dielectric constant was improved with amount of $TiO_2$ to $BaTiO_3$ powder. By applying such a process to dielectric layer of low cost AC powder EL device, brightness was improved to 50 cd/$m^2$ at similar current density. Dielectric constant $BaTiO_3$ powder by solution combustion process is better than commercial $BaTiO_3$ powder. By applying to that of low power consumption AC powder EL device, brightness was improved to 85 cd/$m^2$. Brightness of AC powder EL device was relatively decreased by control of electrical resistivity of rear electrode, current density was also decreased.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.