• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• 전기화학회지
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• 제22권1호
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• pp.36-42
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• 2019

두께가 $52{\mu}m$의 주석필름을 고농도의 질산을 사용한 화학적 식각과정을 거쳐서 리튬이온 이차전지용 고용량 음극인 다공성 주석후막을 제조하였다. 다공성 주석필름은 반응면적이 증가하게 되어 리튬과의 합금화 반응에 대한 과전압이 감소하였으며, 동시에 충방전 시의 부피변화에 대응할 수 있는 공간이 확보되었다. 또한, 이러한 다공성 주석후막 전극은 바인더 및 도전재의 사용이 필요하지 않기 때문에 실질적으로 더욱 큰 에너지 밀도의 구현이 가능하다. 식각용액에서의 질산농도가 증가할 수록 주석필름의 식각되는 정도가 증가하여 주석의 무게와 두께가 더욱 감소하였다. 3 M 농도 이상의 질산에서 주석필름의 식각이 효과적으로 진행되었으나, 5 M 농도에서는 식각속도가 더욱 증가하여 60초 내에 대부분의 주석이 용출되어 회수할 수 없었다. 4 M 농도의 질산용액에서 식각한 경우에는 두께는 40.3%가 감소하며 무게는 48.9%가 감소된 다공성 구조가 형성되었다. 주석필름의 식각되는 정도가 증가함에 따라 전기화학적 활성이 증가하게 되어 리튬저장에 대한 가역용량이 증가하였으며, 4 M 농도에서 식각한 주석필름의 경우에는 650 mAh/g의 가역용량을 나타내었으며, 안정적인 사이클 특성을 나타내어 주석분말을 사용하여 기존의 전극제조 방법으로 제조한 경우보다 향상된 사이클 성능을 나타내었다.

• 한국세라믹학회지
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• 제42권12호
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• pp.865-871
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• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• 한국통신학회논문지
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• 제19권9호
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• pp.1782-1792
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• 1994

$Ti:LiNbO_3$채널형 광도파로와 Asymmetric Coplanar Strip(ACPS) 전극구조를 이용해서, $1.3{\mu}m$에서 동작하는 진형파형 위상 광변조기를 설계, 제작한 다음 변조특성을 관찰하였다. 위상정합이 개선되도록 ACPS 진행파형 전극을 설계하기 위해서 전극과 완충박막의 두께를 포함하여, 전극제원의 해석적 함수로 특성저항, 변조파의 유효굴절률 및 전극손실 등을 고려하였다. Ti 확산방법으로 저손실 채널형 광도파로 제작하였으며, double-spin image reversal 공정을 이용해서 $2.5{\mu}m$ 두께의 전극을 형성하였다. 9GHz 부근에서의 전극구조 공진형상 때문에 변조특성이 제한 되었지만, 2.5GHz 까지는 큰 왜곡없이 변조특성이 관찰되었다.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.129-132
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.926-929
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• 2003

The dissolved oxygen sensor of thick film type was fabricated by screen print method and measured the characteristic, reference electrode used Ag/AgCl, and working electrode used Pt. The devices are continuously powered at potential of $0.7V{\sim}0.8V$ versus Ag/AgCl reference electrode and results indicated that the response characteristic of sensor was $1.002{\mu}A{\sim}19.792{\mu}A$ for thirty seconds. we can know that it is good linearity when compared with of existent dissolved oxygen meter. Therefore sensor fabricated excels sensitivity for dissolved oxygen and will be considered to be applied typically because the price is costly.

• 대한기계학회논문집A
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• 제32권9호
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• pp.728-732
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• 2008

This paper presents ion-based micro vibration sensor for the ultra-high frequency vibration detection. Presented sensor uses the motion of anion and cation in an electrolyte. Electrolyte vibration sensors have the high shock survival characteristics and a simple read-out circuit because of the small mass and own charges of ions. Presented sensor measures the induced electric potential by the mechanical-electrical coupling. It consist of electrolyte chamber and detection electrode. Electrolyte chamber was fabricated by PDMS molding. Detection electrode was made of gold evaporation on pyrex glass. Size of electrolyte chamber was designed as $600{\times}600{\times}100um$. Detection electrode had 200nm-thick and 42um-gap. In the experimental study, 5.8M sodium Chloride (NaCl) solution was used as electrolyte in 36nl-chamber. Mechanical vibration was measured from 2kHz to 4MHz.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.381-384
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000$\AA$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/SiO$_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).