• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.555-555
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• 2012

The thermal stability of poly(sodium 4-styrenesulfonate) intercalated graphite oxide has been investigated using a differential scanning calorimeter. The poly(sodium 4-styrenesulfonate) intercalated graphite oxide composite shows a prominent exothermic reaction near $207^{\circ}C$ and an endothermic reaction near $453^{\circ}C$. Graphite oxide is responsible for the exothermic reaction while the endothermic reaction is caused by the poly(sodium 4-styrenesulfonate) used in the synthesis of poly(sodium 4-styrenesulfonate) intercalated graphite oxide. The onset temperature of the exothermic reaction of poly(sodium 4-styrenesulfonate) intercalated graphite oxide decreased by $92^{\circ}C$ in comparison with that of graphite oxide, indicating the addition of poly(sodium 4-styrenesulfonate) in the composite has diminished the thermal stability of graphite oxide.

• Composites Research
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• v.33 no.1
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• pp.25-29
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• 2020

A liquid crystalline thermosetting-epoxy-based composite was fabricated using diglycidyl ether of 4,4'-biphenol, tin(IV) oxide as a filler, and sulfanilamide as a curing agent. To investigate the thermal behavior, Thermogravimetric Analysis and Laser Flash Apparatus were performed using 3.0-7.0 wt% Tin(IV) oxide. The result showed that the activation energy and thermal conductivity were proportional to the amount of added filler.

• Journal of Powder Materials
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• v.17 no.4
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• pp.276-280
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• 2010

In the present work, ethylene glycol-based (EG) copper oxide nanofluids were synthesized by pulsed wire evaporation method. In order to explode the pure copper wire, high voltage of 23 kV was applied to the both ends of wire and argon/oxygen gas mixture was used as reactant gas. EG-based copper oxide nanofluids with different volume fraction were prepared by controlling explosion number of copper wire. From the transmission electron microscope (TEM) image, it was found that the copper oxide nanoparticles exhibited an average diameter about 100 nm with the oxide layer of 2~3 nm. The synthesized copper oxide consists of CuO/$Cu_2O$ phases and the Brunauer Emmett Teller (BET) surface area was estimated to be $6.86\;m^2\;g^{-1}$. From the analyses of thermal properties, it is suggested that viscosity and thermal conductivity of EG-based copper oxide nanofluids do not show temperature-dependent behavior over the range of 20 to $90^{\circ}C$. On the other hand, the viscosity and thermal conductivity of EG-based copper oxide nanofluids increase with volume fraction due to the active Brownian motion of the nanoparticles, i.e., nanoconvection.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.106-111
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• 2016

Thermal noise generated in the electrolyte is modeled for the electrolyte-oxide-semiconductor field-effect transistors. Two noise sources contribute to output noise currents. One is the thermal noise generated in the bulk electrolyte region, and the other is the thermal noise from the double-layer region at the electrolyte-oxide interface. By employing two slightly-different equivalent circuits for two noise current sources, the power spectral density of output noise current is calculated. From the modeling and simulated results, the bulk electrolyte thermal noise dominates the double-layer thermal noise. Electrolyte thermal noise are computed for three different concentrations of NaCl electrolyte. The derived formulas give a good agreement with the published experimental data.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.151-157
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• 2014

The degradation mechanisms of thermal barrier coatings (TBCs) were investigated in different thermal fatigue condition in terms of microstructural analyses. The isothermal and cyclic oxidation tests were conducted to atmospheric plasma sprayed-TBCs on NIMONIC 263 substrates. The delamination occurred by the oxide layer formation at the interface, the Ni/Cr-based oxide was formed after Al-based oxide layer grew up to ${\sim}10{\mu}m$ in the isothermal condition. In the cyclic oxidation with dwell time, the failure occurred earlier (500 hr) than in the isothermal oxidation (900 hr) at same temperature. The thickness of Al-based oxide layer of the delaminated specimen in the cyclic condition was ${\sim}4{\mu}m$ and the interfacial cracks were observed. The acoustic emission method revealed that the cracks generated during the cooling step. It was considered that the specimens were prevented from the formation of the Al-based oxide by cooling treatment, and the degradation mode in the cyclic test was dominantly interfacial cracking by the difference of thermal expansion coefficients of the coating layers.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.415-419
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• 2004

Thermal barrier systems are susceptible to instability of the thermally grown oxide(TGO) at the interface between the bond coat(BC) and the thermal barrier coating(TBC). The instabilities have been linked to thermal cycling and initial geometrical imperfections, as well as to misfit strains due to oxide growth and expansion misfit. In this work, deformation of TGO near a surface groove due to thermal cycling has been observed at high temperatures, $1100^{circ}C$, $1150^{circ}C$, $1200^{circ}C$. The effect of peak temperature and the thickness of substrate are presented.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4393-4411
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• 2022

In recent years, beryllium oxide has been widely utilized in multiple compact nuclear reactors as the neutron moderator, the neutron reflector or the matrix material with dispersed nuclear fuels due to its prominent properties. In the past 70 years, beryllium oxide has been studied extensively, but rarely been systematically organized. This article provides a systematic review of the application history, thermal properties, mechanical properties, corrosion behavior and fabrication methods of beryllium oxide. Data from previous literature are extracted and sorted out, and all of these original data are attached as the supplementary material, so that subsequent researchers can utilize this paper as a database for beryllium oxide research in reactor design or simulation analysis, etc. In addition, this review article also attempts to point out the insufficiency of research on beryllium oxide, and the possible key research areas about beryllium oxide in the future.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.128-128
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• 2009

The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.