• 전자공학회논문지A
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• 제32A권11호
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• 마이크로전자및패키징학회지
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• 제25권2호
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• pp.9-17
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• 2018

Aluminum (Al) and its alloys have been used widely in a variety of industries such as structural, electronic, aerospace, and particularly automotive industries due to their lightweight characteristic, outstanding ductility, formability, high oxidation and corrosion resistance, and high thermal and electrical conductivity. Al have different kinds of alloys according to the various additional elements system and they should be selected properly depending on their effectiveness and suitability for their particular purpose. The major elements for Al alloys are silicon (Si), magnesium (Mg), manganese (Mn), copper (Cu), and zinc (Zn). In order for Al alloys to use for each industry, it is necessary to study of Al to Al joining and/or the Al to dissimilar materials joining to combine the individual parts into one. Many studies on joining technologies about Al to Al and Al to dissimilar materials have been performed such as press joining, bolted joint, welding, soldering, riveting, adhesive bonding, and brazing. This study reviews a variety of Al alloys and their joining method including its principles and properties with recent trends.

• 한국기계가공학회지
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• 제16권2호
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• pp.108-113
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• 2017

The performance of refrigerant oil at the thrust bearing and at the journal bearing of a scroll compressor is a significant factor. This paper presents the friction and anti-wear characteristics of nano-fluid with a mixture of a refrigerant oil and nano powders. The particle size distribution and oxidation stability of nano powders prepared by the electrical explosion method were analyzed by TEM and BET. It was found that the nanoparticles showed a spherical morphology with sizes ranging of 40-60 nm and were covered with graphite layers of 2-4 nm. The thermal conductivity of POE oil was 0.1-0.5W/mk higher than that of POE oil. The coefficient of friction of Cu-POE was found to be 0.1 higher than that of Al2O3. The cooling capacity of the heat pump with nanofluid increased to 3.67%, and the performance was improved by 5.83%.

• 센서학회지
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• 제17권3호
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.45-51
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• 2001

UBM층과의 젖음 특성 및 표면 산화정도가 미세 피치를 갖는 저 융점 솔더 범프의 볼 형성에 미치는 영향을 연구하였다. Au/Cu/Cr 과 Au/Ni/Ti UBM 위에 공정 조성에 가까운 In-Ag와 공정 조성의 Bi-Sn 솔더를 솔더 층의 증착 순서를 달리하여 증발 증착한 후 lift-off 공정과 열처리 공정을 사용하여 솔더 범프를 형성하였다. In-Ag솔더의 경우 In이 UBM 층과 접한 범프가, 또한 Bi-Sn 솔더의 경우 Sn을 먼저 UBM층위에 먼저 증착시켜 리플로 한 범프가 솔더 볼 형성 경향이 다른 범프에 비해 높았다. 구형의 솔더 범프 형성 정도는 UBM 층과의 젖음 특성에 따라 크게 달라졌다.

• 한국세라믹학회지
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• 제31권12호
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• pp.1501-1506
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• 1994

The precipitate of FeCl2.4H2O and NaOH, Fe(OH)2 was rapidly made to oxidize by H2O2 to prepare $\delta$-FeOOH. The particle size, surface and morphology of $\delta$-FeOOH, and the shape and structure of thermally decomposed $\delta$-FeOOH were investigated by the use of high resolution STEM. $\delta$-FeOOH prepared under the condition of reaction temperature of Fe(OH)2 at 4$0^{\circ}C$, [OH-][Fe2+]=5 and aging time of 2 hr Fe(OH)2, had 630$\AA$ mean particle size, 4~5 aspect ratio, 20.8 emu/g saturation magnetization and 210 Oe coercivity. The edges of $\delta$-FeOOH were inclined to (001) about 41$^{\circ}$, 60$^{\circ}$ and coincident with (102), (101) respectively. When $\delta$-FeOOH was thermally decomposed at 25$0^{\circ}C$ for 2 hr in vacuo, which had micropores of 0.9 nm thickness and crystallites of 2.4 nm thickness. (001)hex, [10]hex. of $\delta$-FeOOH parallel with (001)hex, [100]hex. of $\alpha$-Fe2O3 respectively. This showed three dimensional topotaxial structure transition, which was investigated by SADP (Selected Area Diffraction Pattern) of STEM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.341.1-341.1
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• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.141-146
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• 2014

A series of bimetallic Cu-Zn/$SiO_2$ catalysts were prepared via thermal decomposition of the as-synthesized $CuZn(OH)_4(H_2SiO_3)_2{\cdot}nH_2O$ hydroxides precursors. This highly dispersed Cu-solid base catalyst is extremely effective for hydrogenation of ethyl acetate to ethanol. The reduction and oxidation features of the precursors prepared by coprecipitation method and catalysts were extensively investigated by TGA, XRD, TPR and $N_2$-adsorption techniques. Catalytic activity by ethyl acetate hydrogenation of reaction temperatures between 120 and $300^{\circ}C$, different catalyst calcination and reduction temperatures, different Cu/Zn loadings have been examined extensively. The relation between the performance for hydrogenation of ethyl acetate and the structure of the Cu-solid base catalysts with Zn loading were discussed. The detected conversion of ethyl acetate reached 81.6% with a 93.8% selectivity of ethanol. This investigation of the Cu-Zn/$SiO_2$ catalyst provides a recently proposed pathway for ethyl acetate hydrogenation reaction to produce ethanol over Cu-solid base catalysts.

• 한국재료학회지
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• 제25권7호
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.