• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1026-1029
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• 2008

Temperature increase during OLED operation can significantly degrade the device lifetime. By using top-emission OLEDs fabricated on glass and silicon substrates that have different thermal conductivities, we found that efficient heat dissipation and corresponding lifetime improvement can be obtained by making a direct contact between the OLED anode and the high thermally-conductive silicon substrate. We describe substrate-dependent OLED heat dissipation behavior and OLED lifetime improvement by using infrared camera images and constant current stress test methods.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.20 no.4
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• pp.309-332
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• 2016

Finite element method has been applied to solve the fundamental governing equations of natural convective, electrically conducting, incompressible fluid flow past an infinite vertical plate surrounded by porous medium in presence of thermal radiation, viscous dissipation, Soret and Dufour effects. In this research work, the results of coupled partial differential equations are found numerically by applying finite element technique. The sway of significant parameters such as Soret number, Dufour number, Grashof number for heat and mass transfer, Magnetic field parameter, Thermal radiation parameter, Permeability parameter on velocity, temperature and concentration evaluations in the boundary layer region are examined in detail and the results are shown in graphically. Furthermore, the effect of these parameters on local skin friction coefficient, local Nusselt number and Sherwood numbers is also investigated. A very good agreement is noticed between the present results and previous published works in some limiting cases.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.767-768
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• 2006

In this study, copper vapor chambers with built-in cooling fins, which eliminated the soldered or brazed joints in the conventional vapor chamber, were fabricated using the metal injection molding process. The results show that with optimized molding parameters, fins with an aspect ratio up to 18 could be produced. After sintering, the densities of the fin and chamber reached 96%. With only 32 cooling fins and a small fan installed, the thermal resistance of the heat sink was $1.156^{\circ}C/W$, and the power dissipation was 40W when the junction temperature was $70^{\circ}C$. When copper powder was sintered onto the chamber to make a vapor chamber, the thermal resistance decreased to $1.046^{\circ}C/W$.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2286-2291
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• 2008

Some electronics component, which is adopted as components of antenna for radar or satellite system and used for amplifying signals to transmit, is accompanied by very significant heat dissipation levels because of the inefficiencies inherent in radio frequency wave generation. So, proper cooling performance for that system is base requirement for thermal design. On this paper, we applied heat spreading structures to reduce thermal density and find the optimum values of heat sink design factors through theoretically, numerically and evaluated by product test. As the results, the performance of the cooling system shows the propriety of cooling high density heat dissipation electronics components.

• Journal of the Korean Geosynthetics Society
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• v.12 no.1
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• pp.83-92
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• 2013

Backfill material with thermal resistivity which has $50^{\circ}C$-cm/Watt in wet and $100^{\circ}C$-cm/Watt in dry is requested to improve the power transfer capability for dissipation of heat production in underground power cables. In the field test performed by buried cable backfills, the backfill material developed from this study is compared with river sand and weathered soil (native soil) to investigate the effect of heat transfer in various seasons and locations of thermal sensors. As a result, the developed backfill material is faster approaching yielding temperature (critical heat) than that of river sand and weathered soil, and it has good dissipation capacity rather than other materials by keeping moisture content at dry season.

• ETRI Journal
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• v.27 no.3
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• pp.337-340
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• 2005

A spot-size converted Fabry-Perot laser diode (LD) was flip-chip bonded to a silica-terraced planar lightwave circuit(PLC) platform to examine the effect of the silica terrace on the heat dissipation of the LD module. From the measurement of the light-current characteristics, it was discovered that the silica terrace itself is not a strong thermal barrier, but the encapsulation of the integrated LD with an index-matching polymer resin more or less deteriorates the heat dissipation.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.58-61
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• 2019

The aim of this study is to quantitatively demonstrate the possibility of heat transfer by thermal radiation by comparing heat transfer by conventional heat transfer and radiation by radiation. 1) The heat transfer was measured by using filler of TIM material with low thermal conductivity (CuS). As a result, heat transfer was easier than ceramic with high thermal conductivity ($Al_2O_3$ and $Si_3N_4$). 2) The reason for this is thought to be that the infrared wave due to radiation of the air diaphragm has moved easily. 3) From the above results, the heat dissipation of the TIM material indicates the possibility of heat transfer by thermal radiation.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.5-9
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• 2015

Thermal management becomes serious in 3D stacked IC because of higher heat flux, increased power generation, extreme hot spot, etc. In this paper, we reviewed the recent developments of thermal management for 3D stacked IC which is a promising candidate to keep Moore's law continue. According to experimental and numerical simulation results, Cu TSV affected heat dissipation in a thin chip due to its high thermal conductivity and could be used as an efficient heat dissipation path. Other parameters like bumps, gap filling material also had effects on heat transfer between stacked ICs. Thermal aware circuit design was briefly discussed as well.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.2
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• pp.96-101
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• 2016

The thermal management of high-power LED components in an assembly structure is crucial for the stable operation and proper luminous function. This study employs numerical tools to determine the optimum thermal design in LEDs with a heat sink consisting of a crevice-type vapor-chamber heat pipe. The effects of the MCPCB are investigated in terms of the substrate thicknesses on which the LEDs are mounted. Further, different placement configurations in a system module are considered. This study found that for a confined area, a power of 40 W/LED is applicable to a high-power package. Furthermore, the thermal conductivity of dielectric layer materials should ideally be greater than 0.9 W/m.K. The temperature conditions of the vapor chamber in a heat pipe greatly affect the thermal performance of the system. At an offset distance of 9.0 mm and a $2^{\circ}C$ increase in the temperature of the heat pipe, the resulting maximum temperature increase is approximately $1.9^{\circ}C$ for each heat dissipation temperature. Finally, at a thermal conductivity of 0.3 W/m.K, it was found that the total thermal resistance changes dramatically. Above 1.2 W/m.K, the resistance change reduces exponentially.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.