• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.17-22
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• 2016

Flexible organic light-emitting diode (OLED) devices consist of multi-stacked thin films or layers comprising organic and inorganic materials. Due to thermal coefficient mismatch of the multi-layer films, warpage of the flexible OLED is generated during high temperature process of each layer. This warpage will create the critical issues for next production process, consequently lowering the production yield and reliability of the flexible OLED. In this study, we investigate the warpage behavior of the flexible OLED for each bonding process step of the multi-layer films using the experimental and numerical analysis. It is found that the polarizer film and barrier film show significant impact on warpage of flexible OLED, while the impact of the OCA film on warpage is negligible. The material that has the most dominant impact on the warpage is a plastic cover. In order to minimize the warpage of the flexible OLED, we estimate the optimal material properties of the plastic cover using design of experiment. It is found that the warpage of the flexible OLED is reduced to less than 1 mm using a cover plastic of optimized properties which are the elastic modulus of 4.2 GPa and thermal expansion coefficient of $20ppm/^{\circ}C$.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.5 no.2
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• pp.155-169
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• 2007

A transport container for a 500 kCi tritium storage vessel was developed, which could be used for the transport of metal tritide from Wolsong TRF facility to a disposal site. The structural, thermal, shielding, and confinement analyses were performed for the container in a view of Type B. As a result of structural analysis, the developed container sustained its integrity under normal and accidental conditions. The maximum temperature increase of the inner storage vessel by radiation was evaluated at $134.8^{\circ}C at room temperature. In $800^{\circ}C$ fire test, The thermal barrier of container sustained the inner vessel at $405^{\circ}C after 30 min, which temperature was allowable for the container integrity since maximum design temperature of inner vessel was $550^{\circ}C. In the evaluation of the shielding, the activity of radiation was nearly zero on the outer surface of inner vessel. Consequently the transport container for a 500 kCi tritium was evaluated to pass all the safety tests including accidental condition, so it was concluded that the designed transport container is proper to be used.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.4
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• pp.287-297
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• 2014

For several decades, many countries operating nuclear power plants have been studying the various disposal alternatives to dispose of the spent nuclear fuel or high-level radioactive waste safely. In this paper, as a direct disposal of spent nuclear fuels for deep geological disposal concept, the rod consolidation from spent fuel assembly for the disposal efficiency was considered and analyzed. To do this, a concept of spent fuel rod consolidation was described and the related concepts of disposal canister and disposal system were reviewed. With these concepts, several thermal analyses were carried out to determine whether the most important requirement of the temperature limit for a buffer material was satisfiedin designing an engineered barrier of a deep geological disposal system. Based on the results of thermal analyses, the deposition hole distance, disposal tunnel spacing and heat release area of a disposal canister were reviewed. And the unit disposal areas for each case were calculated and the disposal efficiencies were evaluated. This evaluation showed that the rod consolidation of spent nuclear fuel had no advantages in terms of disposal efficiency. In addition, the cooling time of spent nuclear fuels from nuclear power plant were reviewed. It showed that the disposal efficiency for the consolidated spent fuel rods could be improved in the case that cooling time was 70 years or more. But, the integrity of fuels and other conditions due to the longer term storage before disposal should be analyzed.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.4
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• pp.405-418
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• 2019

Based on spent fuels characteristics from domestic nuclear power plants and a disposal scenario from the current basic plan for high-level radioactive waste management, an improved disposal system has been proposed that enhances disposal efficiency and economic effectiveness compared to the existing disposal system. For this purpose, two disposal canisters concepts were derived from the length of the spent fuel generated from the nuclear power plants. In the disposal scenario, the acceptable amount of decay heat for each disposal container was determined, taking into account the discharge and disposal times of spent fuels in accordance with the current basic plan. Based on the determined decay heat of the two types of disposal canisters and the associated disposal system, thermal stability analyses were performed to confirm their suitability to the proposed disposal system design requirement and disposal efficiency assessment. The results of this study confirm 20% reduction in the disposal area and 20% increase in disposal density for the proposed disposal system compared to the existing system. These results can be used to establish a spent fuel management policy and to design a viable commercial disposal system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.95-102
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• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.

• Polymer(Korea)
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• v.38 no.2
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• pp.180-187
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• 2014

Nanocomposites including graphene oxide (GO) and conducting polymers (PPy, PANI and PEDOT) were prepared via an in-situ chemical polymerization process, and their characteristic properties depending upon the change of conducting polymer (CP) content were analyzed. A confirmation was made on not only the functional groups formed in GO but also the presence of CP existent in the nanocomposites. The molecular interaction between GO and poly(4-styrene sulfonic acid) (PSSA) or CP in the nanocomposites was proposed. With the increase of PEDOT content in the GOPSS/PEDOT nanocomposite, the estimated value of $I_D/I_G$ regarding the Raman analysis of them was decreased and a major change of their Raman spectra characteristic peaks was observed. In the GO-PSS/PEDOT nanocomposite, PEDOT molecules made an exfoliation of GO-PSSA layers and thus they were intercalated among layers. Such a unique molecular morphology induced the highest electrical conductivity for the GO-PSS/PEDOT nanocomposite among three kinds of nanocomposites prepared in this study. It is also noted that the uniform morphology confirmed in this study helped a thermal stability improvement in the nanocomposite due to the presence of GO or GO-PSSA acting as a thermal barrier.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.538-544
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• 1998

The spallation of a thermal barrier coating layer depends on the formation of brittle spinels. thermal expansion mismatch between ceramic and metal. the phase transformation of a ceramic layer and residual stress of coating layer. In this work. the formation mechanism of oxide scale formed by oxidation treatment at 90$0^{\circ}C$ was investigated in order to verify oxidation behavior at the interface between E-beam coated $Zr0_2$-7wt.% $Y_20_3$ and plasma sprayed CoNiCrAIY. Some elements distributed in the bond coating layer were selectively oxidized after oxidation. At the initial time of oxidation. AI-depletion zone and $\alpha$-$Al_O_3$,O, were formed at the bond coating layer by the AI-outward diffusion. After layer grew until critical thickness. spinels. $Cr_20$, and $C0_2CrO_4$ by outward diffusion of Co. Cr, Ni were formed. It was found that the formation of spinels may be related to the spallation of $Zr0_2$-7wt.% $Y_20_3$ during isothermal oxidation.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.2
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• pp.215-223
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• 2005

Non-thermal plasma decomposition of gas-phase styrene was investigated in this study using three different types of plasma reactors; dielectric-barrier discharge (DBD) reactor, surface discharge (SD) reactor and plasma-driven catalyst (PDC) reactor packed with 2.0 wt% $Ag/TiO_2$ catalysts. The main parameters used for the comparative assessment of the plasma reactors include the decomposition efficiency, carbon balance, byproduct distribution, COx ($CO+CO_2$) selectivity and COx yield. The SD and the DBD reactors showed better conversion efficiency of styrene than that of the PDC reactor due to their larger capability in ozone formation. On the other hand, the PDC reactor showed better carbon balance, the yield and the selectivity of COx. The required specific input energies to achieve 100% carbon balance from the decomposition of 100 ppmv styrene using the plasma alone reactors and the PDC reactor were 420 J/L and 110 J/L, respectively. The major decomposition products in gas-phase were CO, $CO_2$ and HCOOH regardless of the types of plasma reactors. In the case of SD and DBD reactors, the $CO_2$ selectivity ranged in $39.5{\sim}60%$. The $CO_2$ selectivity in the PDC reactor was in range of $68.5{\sim}75.5%$.