• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.36-39
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• 2000

This paper presents the technology of condition diagnosis & life estimation on insulation system of the traction motor. In the non-destructive methods for diagnosis of coil insulation state, residual dielectric strength is estimated by the D-map which consist of the partial discharge quantity Q and average degradation degree $\Delta$. In the operating history of machine, the N-Y life estimation method is based on the stop-starting numbers and operating times with considering each degradation factor by the thermal, electrical and heat-cycle stress. With the on-line conditioning monitoring on the currents of traction motors, detecting the abnormal operating state due to bearing faults, stator or armature faults, eccentricity related faults and broken rotor bars can be performed.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.130-134
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• 2016

The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.199-202
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• 1998

Power capacitors are highly reliable equipment due to their completely enclosed configuration. Aging diagnosis system using partial discharge(PD) and acoustic emission(AE) is being highlighted as a research area for degradation of power capacitors. Their dielectric strength can be however reduced due to some stresses such as over-voltage or thermal degradation of the insulation material during their long period of operation. In this paper, it has been developed to express the AE of the EVENT(average amplitude) and HIT(pulse count) according to the source location. And real time measurement of PD signals for aging diagnosis of power capacitors.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.6
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• pp.574-581
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• 1991

Damage in film capacitors has been investigated, using FTIR and ESCA, aiming to elucidate the nature of electrode removal and the possibility of base films to be damaged. Also, tests were conducted to investigate the effect of a long-term thermal aging at elevated temperatures. Unsuccessful clearing or grape-clustering processes can induce a long-term degradation which involves the chemical and morphological changes. Major changes are the oxidation and the decrease in surface crystallinity possibly arising from the corona discharge. An immediate deterioration of BOPP film may occur when the air entrapped between the film layers induces an extensive autocatalytic oxidative degradation. This type of immediate damage may result in a premature failure at an early stage of qualification test. As far as the nature of electrode removal is concerned, a permanent removal of electrode materials was observed in the main erosion area.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.159-163
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• 1989

The various degradation phenomena, such as the evolution of gases, tan $\delta$, moisture content and total acid number in power transformer insulation oil, have been measured and analyzed. Mineral oil has been degraded at laboratory by the forced thermal stress of $60^{\circ}C$ and $90^{\circ}C$ respectively. Thermal aging oil has been degraded about 17, 34, 72 days. Also, we extracted insulation oil from working transformers. We measured gases dissolved in samples, tan $\delta$, moisture content, total acid number. Activation energy and resistivity is calculated from them. It is found that gases and tan $\delta$ increases as partial discharge and total acid number increases and that conductivity of the sample increases as activation energy increases.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.28-32
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• 2001

It was studied in the present work how the thermal cycling performance of LOC (lead on chip) packages depends on the package construct or leadframe materials. First, package body thickness and Au wire diameter were manipulated for the selection of proper package design. Secondly, two different types of leadframe materials (i.e. copper and 52%Fe-48%Ni alloy) were tested to determine the better material for improved reliability margin of plastically encapsulated microelectronic packages. This work shows that manipulating package body thickness was more effective than an increase of Au wire from 23$\mu\textrm{m}$ to 33$\mu\textrm{m}$ for the prevention of wire debonding failure. Further, this work indicates that the LOC packages including the copper leadframes can be more susceptible to thermal cycling reliability degradation due to chip cracking than those including the alloy leadframes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.721-726
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• 2015

In this study, the properties of C-V degradation for thermal conductivity silicone rubber sample which is attached by copper-copper, copper-aluminum, aluminum-aluminum on upper-side and under-side has been measured at temperature of $80^{\circ}C{\sim}140^{\circ}C$. The results of this study are as follows. In case the frequency is increased, it found that the electrostatic capacity increased with increasing temperature to $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$ regardless of kind of electrode. It found that the electrostatic capacity increased with becoming high temperature range of frequency regardless of kind of electrode. This result is considered to be caused by thermal absorption on the thermal conductivity silicone rubber sample. It found that the electrostatic capacity decreased with increasing temperature and frequency. This result is considered to be caused by molecular motion of C-F radical or OH radical.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.391-396
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• 2023

Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb₂O₃, 1 mol% Bi₂O₃, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO₂. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.133-137
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• 2004

In this paper, we investigated impurities content, absorption properties, and thermal properties showing by changing the content of carbon black which is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens and absorption properties were measured by ICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer) and Karl Fisher. And high temperature, heat degradation initiation temperature, and heat weight loss were measured by TGA (Thermogravimetric Analysis). The dimension of measurement temperature was 0$[^{\circ}]$ to 800$[^{\circ}]$, and rising temperature was 10$[^{\circ}/min]$. Impurities content was highly measured according to increasing the content of carbon black from this experimental result also absorption amount was increased according to these properties. Specially, impurities content values of the A1 and A2 of existing resins were measured more than 4000[ppm]. Heat degradation initiation temperature from the TGA results was decreased according to increasing the content of carbon black. All over, heat stabilities were EEA>EBA>pEVA. That is, heat stabilities of EVA containing the weak VA(vinyl acetate) against heat was measured the lowest.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.985-988
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• 2004

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.