• Title/Summary/Keyword: Thermal and electrical degradation

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Study of Magnetic Field Shielded Sputtering Process as a Room Temperature High Quality ITO Thin Film Deposition Process

  • Lee, Jun-Young;Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.288-289
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    • 2011
  • Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

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Simple and Clean Transfer Method for Intrinsic Property of Graphene

  • Choe, Sun-Hyeong;Lee, Jae-Hyeon;;Kim, Byeong-Seong;Choe, Yun-Jeong;Hwang, Jong-Seung;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.659-659
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    • 2013
  • Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

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RTA Effect on Transport Characteristics in Al0.25Ga0.75As/In0.2Ga0.8As pHEMT Epitaxial Structures Grown by Molecular Beam Epitaxy (MBE로 성장된 Al0.25Ga0.75As/In0.2Ga0.8As pHEMT 에피구조의 RTA에 따른 전도 특성)

  • Kim, Kyung-Hyun;Hong, Sung-Ui;Paek, Moon-Cheol;Cho, Kyung-Ik;Choi, Sang-Sik;Yang, Jeon-Wook;Shim, Kyu-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.605-610
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    • 2006
  • We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes (4H-SiC PiN 다이오드의 깊은 준위 결함에 따른 전기적 특성 분석)

  • Tae-Hee Lee;Se-Rim Park;Ye-Jin Kim;Seung-Hyun Park;Il Ryong Kim;Min Kyu Kim;Byeong Cheol Lim;Sang-Mo Koo
    • Korean Journal of Materials Research
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    • v.34 no.2
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    • pp.111-115
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    • 2024
  • Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

Improving the concrete quality and controlling corrosion of rebar embedded in concrete via the synthesis of titanium oxide and silica nanoparticles

  • Jundong Wu;Yan Cui
    • Advances in concrete construction
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    • v.15 no.1
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    • pp.1-10
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    • 2023
  • Concrete is one of the most widely used structure materials. Concrete is like the motor of the construction industry. The remarkable feature of this Concrete is its cheapness and low energy consumption. Concrete alone does not show resistance against any force but only against compressive forces. Therefore, steel rebar product is used as a reinforcement and increase the strength of Concrete. It can be done by putting rebar in Concrete in different ways. Rebar rusting is one of the crucial symptoms that cause swift destruction in reinforced structures-factors such as moisture in concrete increase the steel corrosion rate. In most cases, it is difficult to compensate for the damage caused by the corrosion of base metals, so preventing corrosion will be much more cost-effective. Coatings made with nanotechnology can protect Concrete against external degradation factors to prevent water and humidity from penetrating the Concrete and prevent rusting and corrosion of the rebar inside. It prevents water penetration and contamination into the Concrete and increases the Concrete's quality and structural efficiency. In this research, silica and titanium dioxide nanoparticle coatings have been used due to their suitable electrical and thermal properties, resistance to oxidation, corrosion, and wear to prevent the corrosion of rebars in Concrete. The results of this method show that these nanoparticles significantly improve the corrosion resistance of rebars.

A Study on the Process Analysis and the Risk Assessment for Removal Work of the Asbestos Cement Slate (석면 슬레이트 해체작업의 공정분석 및 위험성평가에 관한 연구)

  • Oh, Hyunsoo;Kim, Jeong-Min;Chang, Seong Rok
    • Journal of the Korean Society of Safety
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    • v.29 no.6
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    • pp.137-143
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    • 2014
  • Asbestos is given to a variety of six naturally occurring silicate minerals. These minerals possess high tensile strength, flexibility, resistance to chemical and thermal degradation, and electrical resistance. These minerals have been used for decades in thousands of commercial products, such as insulation and fireproofing materials, automotive brakes, textile products, cement and wallboard materials. When handled, asbestos can separate into microscopic-size particles that remain in the air and are easily inhaled. It is now known that prolonged inhalation of asbestos fibers can cause serious and fatal illnesses including malignant lung cancer, mesothelioma, and asbestosis. Therefore the use of asbestos and asbestos products has dramatically decreased in recent years. Also all constructions including asbestos should be removed under strictly controlled conditions and very tightly implemented health & safety management systems. In this study, the process of the removal work of the asbestos cement slate was analyzed by IDEF-0 modeling and evaluated by 4M risk assessment method. The results show that removal work of the asbestos cement slate was classified five process and eighteen detail process. The risk of safety side the higher than the risk of health side in 4M risk assessment.

Prospects on the Use of Corrosion Rate Measurement Method for Stainless Steel (스테인리스 강의 부식 측정방법의 이용과 전망)

  • Choi, Yongseon;Lee, Jaewon;Park, Eunoak;Lee, Kiyoung
    • Journal of the Korean institute of surface engineering
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    • v.54 no.6
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    • pp.294-301
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    • 2021
  • As the number of cases of performance degradation owing to corrosion of plant during processing in industries increases, the cost of maintaining industrial factory is increasing year by the year. Most of the materials of the facilities are consist of stainless steel (SS) such as austenite SS, ferrite SS, martensite SS, and duplex SS. Among them austenite SS is cheap and has excellent corrosion resistance and heat resistance. Corrosion is the consumption and change of metals by altering chemical and electrical reactions. The types of SS corrosion include pitting corrosion, crevice corrosion, galvanic corrosion, stress corrosion cracking, and thermal corrosion. The corrosion of SS is not only investigated various environmental factors but also the measurement of the corrosion rate. Therefore, it aims to understand comprehensive corrosion rates in various environments using qualitative, quantitative and electrochemical methods.

Effects of constituents in CNT pastes on the field emission characteristics of carbon nanotubes

  • Yoon, Seung-Il;Kim, Sam-Soo;Lee, Yang-Kyu;Kim, Tae-Kwon;Lee, Dong-Gu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1206-1209
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    • 2006
  • Carbon nanotubes (CNTs) have been significantly used for the field emitters for display applications. However, the lifetime of CNT emitters which are formed by screen printing technique is not guaranteed yet, because the constituents in CNT paste affect the lifetime of CNTs. The CNT pastes for screen printing are normally composed of organic vehicles (nitro cellulose, ethyl cellulose, etc) and additives (glass frits, ITO, etc) with CNTs. In this study, the effects of constituents in CNT pastes on the lifetime and emission characteristics of CNTs were investigated by thermal and electrical analysis. Use of glass frits worsened the lifetime and electron emission of CNTs. However, an addition of ITO to CNT paste rather improved the lifetime of CNTs. Degradation of CNTs was small when nitro cellulose was used in CNT paste as an organic vehicle.

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A Comparative Study on the Characteristics of Accelerated aging at Low and High Temperatures of the Fluorocarbon Rubber Composites (불소 고무복합체의 저온과 고온촉진노화 특성에 대한 비교 연구)

  • Park, JeongBae;Lee, BeomCheol;Jeong, YoonSeok;Park, SungHan
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2017.05a
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    • pp.915-922
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    • 2017
  • The study on the thermal and oil resistance rubber composite, 2016. [6] predicted the lifetime of Fluorocarbon Rubber by accelerating aging at high temperature ($150^{\circ}C$, $175^{\circ}C$, $200^{\circ}C$). general rubber products are likely to exhibit different properties depending on the degradation factors such as temperature, humidity, ozone, light, emulsion, mechanical and electrical stress. To solve these problems, We compared the rate of change about tensile strength, elongation rate, volume change rate, weight change rate, thickness change rate, thermal conductivity in low temperature promoting aging on the basis of predictive lifetime of high temperature promoting aging. As a result of the review, the required life expectancy was satisfied, but there was a slight difference in the rate of change between the high-temperature promoted aging life result and the low temperature promoted aging life result. The cause was a reduction in "tensile strength / elongation" and an increase in "volume / weight / thickness" caused by the main chain decomposition of fluorine rubber due to aging at high temperature promoting aging. However, the low temperature promoting aging was caused by the curing reaction of fluorine rubber at $80^{\circ}C$. The tensile strength / elongation and volume / weight / thickness changes were small.

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Surface and Tracking Properties of Polymer Suspension Insulator for Power Transmission with secular variation (경년열화에 따른 송전용 폴리머 현수애자의 표면 및 트래킹 성능)

  • Cho, Han-Goo;Lee, Un-Yong;Han, Se-Won;Han, Dong-Hee;Huh, Jong-Chul;Choi, In-Hyuk
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.233-236
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    • 2004
  • Recently, the polymer insulators that are used for high voltage applications have some advantages such as light weight, small size, vandalism resistance, hydrophobicity and easy making process. During outdoor service of polymer insulators, the surface of the insulating material is frequently subjected to moisture and contamination that lead to dry band arcing. Their tracking resistance, erosion resistance, end sealing and shed design are very important because dry band arcing causes degradation of polymer surface. The shape design of porcelain insulator is formalized but design standard for polymer insulator is no standardized up to now, much research is necessary in real condition. In this paper, the surface and tracking properties of polymer suspension insulator for power transmission is investigated with ICP-AES, SEM, EDX, tracking wheel test and flashover voltage test. The diagnosis of insulator sample in tracking test hass been analyzed by leakage current STRI Guide and thermal image.

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