• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• Fisheries and Aquatic Sciences
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• v.18 no.2
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• pp.137-142
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• 2015

Antifreeze proteins and glycoproteins [AF(G)Ps] constitute a group of proteins that lower the freezing but not the melting points of aqueous solutions, enabling polar and north-temperate fish to survive in ice-laden environments. However, little is known about antifreeze activity in temperate fish; such work would extend our knowledge on the functions and evolution of AF(G)Ps. In the present study, we screened for antifreeze activity in temperate fish caught off the coast of Jumunjin ($37.89^{\circ}N$), Gangneung, Korea. Thermal hysteresis (TH) and the ability to inhibit ice recrystallization (IR) in blood, liver, and muscle samples from nine fish were examined to assess antifreeze activity. As the East Sea off the coast of Jumunjin is ice-free year round, we thought it most unlikely that the fish would express antifreeze proteins. Surprisingly, the blood of Pleurogrammus azonus and three types of tissue from Gymnocanthus herzensteini, Zoarces gilli and Kareius bicoloratus exhibited measurable TH values together with the ability to trigger characteristic morphological changes in ice crystals. Blood samples from the three species also evidenced ice recrystallization (IR) inhibition. This implies that AF(G)Ps or other antifreeze-like substances are present in temperate fish even under nonfreezing conditions. These results contribute to our understanding of the functions and origins of antifreeze activity in fish.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.241.1-241.1
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• 2013

최근 고집적화된 금속-산화막 반도체 metal oxide semiconductor (MOS) 소자는 크기가 점점 작아짐에 따라 얇은 산화막과 다양한 High-K 물질과 전극에 대하여 연구되고 있다. 이러한 소자의 열적 안정성과 균일성을 얻기 위해 다양한 열처리 방법이 사용되고 있으며, 일반적인 열처리 방법으로는 conventional thermal annealing (CTA)과 rapid thermal annealing (RTA)이 많이 이용되고 있다. 본 실험에서는 microwave radiation에 의한 열처리로 소자의 특성을 개선시킬 수 있다는 사실을 확인하였고, 상대적으로 $100^{\circ}C$ 이하의 저온에서도 공정이 이루어지기 때문에 열에 의한 소자 특성의 열화를 억제할 수 있으며, 또한 짧은 처리 시간 및 공정의 단순화로 비용을 효과적으로 절감할 수 있다. 본 실험에서는 metal-oxide-silicon (MOS) 구조의 capacitor를 제작한 다음, 기존의 CTA나 RTA 처리가 아닌 microwave radiation을 실시하여 MOS capacitor의 전기적인 특성에 미치는 microwave radiation 효과를 평가하였다. 본 실험은 p-type Si 기판에 wet oxidation으로 300 nm 성장된 SiO2 산화막 위에 titanium/aluminium (Ti/Al) 금속 전극을 E-beam evaporator로 형성하여 capacitance-voltage (C-V) 특성 및 current-voltage (I-V) 특성을 평가하였다. 그 결과, microwave 처리를 통해 flat band voltage와 hysteresis 등이 개선되는 것을 확인하였고, microwave radiation 파워와 처리 시간을 최적화하였다. 또한 일반적인 CTA 열처리 소자와 비교하여 유사한 전기적 특성을 확인하였다. 이와 같은 microwave radiation 처리는 매우 낮은 온도에서 공정이 이루어짐에도 불구하고 시료 내에서의 microwave 에너지의 흡수가 CTA나 RTA 공정에서의 열에너지 흡수보다 훨씬 효율적으로 이루어지며, 결과적으로 산화막과 실리콘 기판의 계면 특성 개선에 매우 효과적이라는 것을 나타낸다. 따라서, microwave radiation 처리는 향후 저온공정을 요구하는 nano-scale MOSFET의 제작 및 저온 공정이 필수적인 display 소자 제작의 해결책으로 기대한다.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.934-938
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• 1995

A series of solid solutions in the Ca2AlxFe2-xO5 (x=0.00, 0.50, 0.66, 1.00 and 1.34) system with brownmillerite structure has been synthesized at 1100 ℃ under an atmospheric air pressure. The solid solutions are analysed by powder x-ray diffraction analysis, Mohr salt titration, thermal analysis, and Mossbauer spectroscopic analysis. The x-ray diffraction analysis assigns the compositions of x=0.00 and 0.50 to the space group Pcmn and those of x=0.66, 1.00, and 1.34 to the Ibm2. Mo&ssbauer spectra have shown the coordination state and disordering of Al3+ and Fe3+ ions. The substituting preference of Al3+ ions for the tetrahedral site decreases with increasing x value. Magnetic susceptibility of the system has been measured in the temperature range of 5 K to 900 K. The solid solutions of the compositions of x=0.00, 0.50 and 0.66 have shown a thermal hysteresis and the thermoremanent magnetization gap decreases with increasing x value in the above systems. However the compositions of x=1.00 and 1.34 do not show the hysteresis. The exchange integral is calculated from Fe3+ ion occupancy ratio. The integral decreases with x value and thus the magnetic transition temperature decreases with the increasing x value.

• Journal of the Korean Magnetics Society
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• v.24 no.3
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• pp.76-80
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• 2014

Toroidal cores made of metallic powder requires large magnetic field strength up to few decade kA/m to obtain major hysteresis loop. To overcome thermal heat generation problem from large exciting current during measurement, we have employed a real time hysteresis loop tracer which can digitize and calculate B-H signals in personal computer as real time. For example, when we magnetize specimen at 10 Hz frequency, we could display hysteresis loops 10 times per second. Using the real time hysteresis loop tracer, we could measure major hysteresis loop of toroidal shape metallic powder core at maximum flux density or maximum magnetic field strength to be measured within 5 second not to significant increasement of specimen temperature due to the heat dissipation from coil windings. For the constructed hysteresis loop tracer, we could measure hysteresis loop at magnetic field strength higher than 50 kA/m for the toroidal shape specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Journal of Korea Foundry Society
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• v.29 no.5
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• pp.187-191
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• 2009

Microstructures and shape memory characteristics of $Ti_{50}Ni_{20}Cu_{30}$ alloy strips fabricated by arc melt overflow have been investigated by means of XRD, optical microscopy and DSC. The microstructure of as-cast strips exhibited columnar grains normal to the strip surface. X-ray diffraction analysis showed that one-step martensitic transformation of B2-B19 occurred in the alloy strips. According to the DSC analysis, it was known that the martensitic transformation temperature ($M_s$) of B2 $\rightarrow$ B19 in $Ti_{50}Ni_{20}Cu_{30}$ strip is $57^{\circ}C$. During thermal cyclic deformation with the applied stress of 60 MPa, transformation hysteresis and elongation associated with the B2-B19 transformation were observed to be $3.7^{\circ}C$ and 1.6%, respectively. The as-cast strip of $Ti_{50}Ni_{20}Cu_{30}$ alloy also showed a superelasticity and its stress hysteresis was as small as 14 MPa. These mechanical properties and shape memory characteristics of the alloy strips were ascribed to B2-B19 transformation and the controlled microstructures produced by rapid solidification of the arc melt overflow process.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.23 no.7
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• pp.498-504
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• 2011

As the electronic industry rapidly develops, the heat flux from state-of-the-art electronics increases up to $10^6\;W/m^2$. For this reason, the development of a new cooling technology for high heat flux applications is strongly required. Recently, some cooling technologies using boiling and condensation of working fluid are being adopted to overcome such a technical barrier. In the present study, a smooth boiling surface ($14{\times}14\;mm^2$) was immersed in FC-72 and its vapor was condensed by four different types of condensation surfaces ($30{\times}30\;mm^2$ base). The condensing surfaces were composed of a smooth surface and $1{\times}1\;mm^2$ pin-finned surfaces of 2 mm height with 0.3, 0.5 and 1 mm array spacing. Boiling and condensing characteristics were investigated in detail on their combinations of boiling and condensing surfaces. For a smooth boiling surface the results obtained showed that the pin-finned condensing surface with 1 mm array spacing yielded the best performance and the smooth condensation surface did the worst. Furthermore hysteresis phenomena could be reduced by using enhanced condensing surfaces.