• Journal of the Korea Computer Industry Society
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• v.8 no.1
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• pp.49-56
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• 2007

Various kind of laser had been used on addition to endoscope for obstetrics and gynecology, gas laser such as CO2 laser had been used mainly much in laparoscope surgical operation mainly Thermal effect of beam displays other result different component parts of cellular tissue and different close of a marketplace of laser beam and priority solidification of temperature increase consists in cellular tissue, and cutting or carbonization process happens and evaporation by breakdown of cellular tissue happens more than $300^{\circ}$. <중략> Ostabilization of pulse transformer by high tension output module of CO2analog laser for obstetrics and gynecology that accomplish marks of honor kind switching and accuracy is required, and stabilize with laser output applying Turn-off in existent hard switching forward converter, on city happened switching damage, damage increase of output diode station recovery special quality, parasitism shock, design and result that manufacture, brought result that improve than existing product. Will be bought to get into superior result if supplement as systematic late.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1418-1419
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• 2011

차세대 전력 반도체인 고전압 GaN 쇼트키 장벽 다이오드의 역방향 특성을 개선하기 위해서 열 산화공정이 제안되었다. AlGaN/GaN 에피탁시 위에 쇼트키 장벽 다이오드 구조가 제작되었으며, 쇼트키 컨택은 증착 후 $450^{\circ}C$에서 산화되었다. 열 산화공정이 메사 측벽의 AlGaN 및 GaN 표면에 $AlO_x$ 및 $GaO_x$를 형성하여 표면으로 흐르는 누설전류를 억제한다. 표면 및 GaN 버퍼를 통한 누설전류는 열 산화 공정 이후 100 ${\mu}m$-너비당 51.3 nA에서 24.9 pA로 1/2000 배 수준으로 감소하였다. 표면 산화물 형성으로 인하여 생성된 Ga-vacancy와 Al-vacancy는 acceptor로 동작하여 surface band bending을 증가시켜 쇼트키 장벽 높이를 증가시킨다. 애노드-캐소드 간격이 5 ${\mu}m$인 제작된 소자는 0.99 eV의 높은 쇼트키 장벽 높이를 획득하여, -100 V에서 0.002 A/$cm^2$의 낮은 누설전류를 확보하였다. 애노드-캐소드 간격이 5에서 10, 20, 50 ${\mu}m$로 증가되면 소자의 항복전압은 348 V에서 396, 606, 941 V로 증가되었다. 열 산화공정은 전력용 GaN 전자소자의 누설전류감소와 항복전압 증가를 위한 후처리 공정으로 적합하다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.23-28
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• 1993

Thin films of soft magnetic Fe-Hf-C alloys with nanoscale crystallites were investigated in this study. The films were fabricated by an RF diode magnetron sputtering apparatus and subsequently annealed in vacuum. The soft magnetic properties of the films were observed to differ depending on the different substrates such as Corning 7059, $CaTiO_3$ and $Al_2O_3-TiC$ with various underlayer(Cr, $SiO_2$) thickness. This results may be due to the interdiffusion between the substrate and the magnetic layer and/or between the underlayer and the magnetic layer, rather than the microstructural change such as grain size. The Fe-Hf-C films with high permeability up to 4000(at 1 MHz) and saturation magnetization up to 16 kG were obtained in the vicinity of phase boundary between the crystalline and amorphous state when the size of ${\alpha}-Fe$ grains is about 5 nm. And also the films were found to have thermal stability up to $600^{\circ}C$.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.3
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• pp.226-232
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• 2005

Recently, many nation have released standard such as IEC 61000-3-2 and IEEE 59, which impose a limit on the harmonic current drawn by equipment connected to AC line in order to prevent the distortion of an AC Line. Therefore, Plasma Display Panel(PDP) which is highlightened in digital display device also has the Power Factor Correction(PFC) circuit to meet the harmonic requirements. In PDP power module, the conventional boost converter is usually used for the PFC circuit. However, it comes serious thermal problem on it's bridge diode due to heat of PDP, and therefore the system stability is not guaranteed. In this paper, the bridgeless boost converter, which is used for PFC circuit of the PDP power module, is designed and verified the possibility of the application In a practical product in a view of efficiency, component count, temperature and etc.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1732-1734
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• 2001

The purpose of this experiment was to develope Triggered Vacuum Switch(TVS) and to improve understanding of the high current vacuum arc phenomena in the TVS. The TVS has an array of rods of alternate polarity in which a fixed gap spacing is maintained between the rods. The cross section of each rod has trapezoidal shape. Breakdown of the TVS produced high current vacuum arc plasma. A spectroscopic measurement was performed over 20 kA peak current in the center of electrodes, in the vicinity of cathode, and outside electrodes. The electrode material tested was Fe. Measured Fe spectrum range was from 200 nm to 900 nm. Measurement result showed that over 90 percent of the charge states were FeII and the others were FeI and FeIII. The electron temperature was determined from the relative line intensity ratio methode of FeII system by assuming the local thermal equilibrium(LTE). The electron temperature at the center of electrodes was measured as 1.5 eV at 26 kA peak current. The electron temperature varied with its peak current. Intensity of spectrums is the highest in the vicinity of the cathode. Further we will also present study result of the diode phenomena in the TVS.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.63-68
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• 2011

The investigation is directed to lead free (Pb-free) frits that can be used for organic light emitting diode, plasma display screen devices and other sealing materials. $P_2O_5$-SnO system glasses have been prepared for Pb-free low temperature glass frit. Structure and properties of the glasses with the composition SnO-$xB_2O_3-(60-x)P_2O_5$ (x=0, 5, 10, 15, 20, 25, 30, 35, 40 mol%) were characterized by infrared spectra (IR), X-ray diffraction(XRD), Density, Molar volume, Thermo mechanical analysis(TMA) and weight loss after immersion test. Glass transition temperature($T_g$), dilatometric softening temperature($T_d$) and chemical durability increased, and coefficient of thermal expansion($\alpha$) decrease with the substitution of $B_2O_3$ for $P_2O_5$ in the range of 0~25 mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.738-742
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• 2012

This paper conducted a study on how the heat radiation of light emitting diode(LED) luminaires affects the indoor temperature increase. The effect was compared with that of a 20 W compact fluorescent lamp(CFL) and a 50 W MR16 halogen lamp which are most widely used inside of cruises, a LED downlight and a 4W MR16 LED replacing each of them. We installed a luminarie inside a thermally shielded chamber, measuring the temperature changes under the same volume every 5 minutes and compared the result with theoretically calculated heat radiation. The temperature changes in the chamber was measured four times, on seven hours' period in order to keep sufficient time once the temperature reaches the thermal equilibrium state. The results showed that the temperature of the 20 W E26 CFL and the 10 W LED downlight increased by $21.1^{\circ}C$ and $10.4^{\circ}C$ respectively, while that of the 50 W halogen MR16 and the 4 W LED MR16 increased by $33.9^{\circ}C$ and $4.8^{\circ}C$ respectively. The experimental heat radiation were calculated from the results and the experimental heat radiation of the CFL and the LED downlight were 171.5 cal and 86.5 cal, and those of the halogen MR16 and the LED MR16 were 275.3 cal and 36.5 cal. Therefore, the heat radiation was reduced by 49.5% and 86.7%, respectively, by replacing conventional light source with LED. In conclusion, we can expect a reduction of power consumption in air condition system and the effect on indoor temperature increase by application of LED luminaires.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1646-1654
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• 2002

A two-phase closed thermosyphon was one of the most effective devices in the removing heat because of its simple structure, thermal diode characteristics, wide operating temperature range and so on. In this study, a two-phase closed thermosyphon(working fluid PFC(C6F14), container copper(inner grooved surface)) was fabricated with a reservoir which can change the fill charge ratio. The experiments were performed in the range of 50~600W heat flow rate and 10~70% fill charge ratio. The results were compared with some correlations that were presented by Rohsenow and Immura et al. in the evaporator, by Nusselt, Gross and Uehara et al. in the condenser and by Cohen and Bayley, Wallis, Kutateladze and Faghri et al. in heat transfer limitation etc.. The heat transfer coefficient at the evaporator increased with the input power. However the effect of the fill charge ratio was nearly negligible. At the condenser, it showed an opposite trend to the evaporator and with increase of the fill charge ratio, showed some enhancement of heat transfer. The heat transport limitation was occurred by the dry-out limitation for small fill charge ratio(10%) and presented about 100W. For the case of large fill charge ratio(Ψ$\geq$40%), it was occurred by the flooding limitation at about 500W.