• Corrosion Science and Technology
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• v.13 no.5
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• pp.195-203
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• 2014

Modern industry has a wide variety of application areas such as ocean industry, construction and automobile industry. With the current circumstances, the need for anti-corrosion technology that can be used on materials to withstand in harsh environments, is increasing. In this study, we have sought to develop a metal coating technology with zinc and aluminum powders as a potential anti-corrosion material. To make a coating on metal products, a thermal diffusion coating method was used under the conditions of $350^{\circ}C$ for 30 minutes. Optical microscope, Field emission scanning electron microscope (FE-SEM&EDX) and X-ray diffraction analysis were used to analyze a coating layer. As a result, we have confirmed that the generated amount of rust on metal parts coated with thermal diffusion coating method decreased dramatically compared with non-coated metal parts. Furthermore, the anti-corrosion performance was evaluated according to the different ratio of zinc and aluminum. Finally, we confirmed the possibility of application and commercialization of our coating technique on metal parts used in harsh industrial based on the results of these performance.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.2
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• pp.201-207
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• 2012

Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.27 no.8
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• pp.426-431
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• 2015

The advantages of a printed circuit heat exchanger (PCHE) are the compactness and efficiency derived from its heat-transfer characteristics; furthermore, a PCHE for which a diffusion bonding method was used during production can be applied to extreme environments such as a cryogenic condition. In this study, a micro-channel PCHE fabricated by diffusion bonding was investigated in a cryogenic environment regarding its thermal performance and the pressure drop. The test rig consists of an LN2 storage tank, vaporizers, heaters, and a cold box, whereby the vaporized cryogenic nitrogen flows in hot and cold streams. The overall heat-transfer coefficients were evaluated and compared with traditional correlations. Lastly, we suggested the modified heat-transfer correlations for a PCHE in a cryogenic condition.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.79-82
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• 1995

$N^+$ beam modified diffusion barriers have been proposed for Cu metallization . The crystalline phases of W and Ti thin films change from polycrytalline to amorphous phase by the N ion implantation of 1~$3\times 10^{17}$atoms/$\textrm{cm}^2$. The comparison between these amorphized diffusion barriers and the conventional W and TiN films shows that the amorphized W and Ti diffusion barriers are superior to the conventional w and TiN for protecting the Cu diffusion barriers are superior to the conventional W and TiN for protecting the Cu diffusion at the annealing temperature range $600^{\circ}C$~$800^{\circ}C$ for 30min. This is a worldwidely new and excellent result on the high temperature thermal stability of diffusion barrier.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.3
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• pp.281-288
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• 2004

Combustion using oxygen enriched air is an energy saving technology that can increase thermal efficiency by improving the burning rate and by increasing the flame temperature. Flame figures, OH radical intensities, temperature distributions and emissions concentration were examined according to oxygen enriched concentration(OEC) in a turbulent diffusion flat flame. As long as the oxygen enriched concentration was increased, the length and volume of the flat flame was decreased while OH radical intensity was raised and the flame temperature was increased. However, RMS of the fluctuating temperature was decreased, and more homogeneous temperature field was formed. Thermal NO also was increased with increase of oxygen enriched concentration, but CO was decreased due to the increase of chemical reaction rate.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.112-117
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• 2001

An experiment using high preheated and swirled air in the coaxial diffusion flame burner was carried out in order to decrease NOx emission and improve the thermal efficiency. $N_2$ gas was used for diluent and propane was utilized for fuel. Combustion using high preheated air has two remarkable characteristics ; (1) low NOx emission with increasing dilution level, (2) high thermal efficiency in the furnace. Also, swirled air can mix fuel and oxidizer well in condition of diffusion flme and maintain the stable combustion. The color of flame changes from yellow to blue green according to increasing the dilution level of mixture gas. NO emission decreased with increasing dilution level and the swirl number.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.6
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• pp.514-523
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• 2001

The thermal performance characteristics of gas-loaded heat pipe(GLHP) were investigated by using transient diffuse-front model. Numerical evaluation of the GLHP is made with water as a working fluid and Nitrogen as control gas in the stainless steel tube. The transient vapor temperature and wall temperature were obtained. It is found that the temperature profiles and gas mole fraction distribution have been mainly influence by the diffusion between working fluid and noncondensable control gas in the condenser of GLHP. It is also found that he large power input make the diffusion region smaller.