• 제목/요약/키워드: Thermal Breakdown

검색결과 319건 처리시간 0.029초

질화와 재산화 조건에 따른 모스 소자의 전기적 특성변화 (Electrical properties variations of nitrided, reoxided MOS devices by nitridation condition)

  • 이정석;이용재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.343-346
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    • 1998
  • Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

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콤팩트 부스덕트용 에폭시분체도료의 전기적.기계적 특성연구 (A Study on the Electrical and Mechanical Properties of a Epoxy Powder for Compact Bus Duct)

  • 김상현;최진욱;김동욱;김현희
    • 한국전기전자재료학회논문지
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    • 제22권3호
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    • pp.210-217
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    • 2009
  • Insulated methods of compact bus duct has been applied a way of coating Epoxy powder. The problem which is caused by degradation during operation is very important in severe environment. Therefore, this study compared and verified many kind of properties ; electrical breakdown by thermal and water aging, v-t characteristic, arc discharge, mechanical properties, bending test and cross cut. Sample D was stable before the $T_g$ to be about $7{\sim}10 %$ decrease in the breakdown test according to temperature change. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical and mechanical characteristic, both sample D and A have excellent capacity.

DGEBA/MDA/SN/천연 제올라이트계의 절연파괴현상에 미쳐는 흡습의 영향 (Effect of Moisture Absorption on Dielectric Breakdown Phenomena of DGEBA/MDA/SN/Natural Zeolite System)

  • 김유정;이홍기;김상욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.994-996
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    • 1999
  • Hygrothermal aging at the elevated temperature induces the long-term degradation of the epoxy resin. We investigated the effects of hydrothermal stress on the dielectric breakdown phenomena of epoxy composite filled with natural zeolite. The cured specimens absorbed the moisture in the autoclave at $120^{\circ}C$. $T_g$ of the deteriorated composite by moisture absorption decreased. The dielectric breakdown strength decreased with the moisture absorption cycle. It was concluded that the thermal stress and the high water-vapour-pressure deteriorated the natural zeolite filled epoxy resin system, consequently and the tree growth rate increased.

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저밀도 폴리에틸렌 필림의 결정화도 및 전기적 특성 (The crystallinity and electrical characteristics of low density polyetylene thin film)

  • 윤중락;권정열;이헌용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.164-168
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    • 1996
  • The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

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주상변압기 적용을 위한 친환경 식물성절연유의 절연특성 연구 (Research on Dielectric Characteristics of Environmental-Friendly Vegetable Insulation Oil for the Pole Transformer)

  • 곽동순
    • 한국안전학회지
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    • 제25권6호
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    • pp.81-85
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    • 2010
  • In recent years, environmental concerns have been raised on the use of poorly biodegradable fluids in electrical apparatus in regions where spills from leaks and equipment failure could contaminate the surroundings. The vegetable insulation oils are highly biodegradable, have negligible effect on the environment, human health and ecosystem. Therefore, to assure their safe use in electrical power systems, it may require some processing and modification to improve some of their physical, chemical, thermal and electrical properties. This paper provides a comparative results of the electrical breakdown properties of several vegetable insulation oils and mineral oil to use as dielectric fluid in environmental-friendly pole transformer. Also, the electrical breakdown property of the Nomex and kraft insulation papers in vegetable insulation oil is examined.

질화, 재산화시진 모스 절연막의 온도 변화에 따른 누설전류의 변화 (Temperature dependance of Leakage Current of Nitrided, Reoxided MOS devices)

  • 이정석;장창덕;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.71-74
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    • 1998
  • In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

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가열조건이 폴리아미드지의 절연특성에 미치는 영향 (A Study on the heating conditions affect on the insulation characteristics of polyamid papers)

  • 선종호;김우성;김광화
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.2047-2049
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    • 2000
  • In this study, we describe comparison of insulation characteristics of polyamid papers with heating conditions. The partial discharge behavior until breakdown and breakdown strength for thermal degradation films are observed in $SF_6$ gas chamber. The four layered NOMEX films of thickness of 50${\mu}m$ were used as solid insulation films and the sphere of which diameter is 40mm to sphere electrode system was used and each insulation films were inserted between sphere electrodes. The used gas pressure was 1.0bar and used temperature was each of 250$^{\circ}C$, 270$^{\circ}C$, 300$^{\circ}C$, 320$^{\circ}C$, 350$^{\circ}C$ and the voltage were applied until breakdown films.

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Mega Bit DRAM Capacitor를 위한 무결함 박막 SiO2 (Defect Free Thin SiO2 Thermally Grown On Silicon For Mega Bit DRAM Capacitor)

  • 여인석;윤규한;김병석;최민성;이귀로
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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    • pp.436-438
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    • 1987
  • The thermal oxidation recipe has been optimized for very thin (12 nm) capacitor oxide for Mega bit DRAM. The time dependent dielectric breakdown characteristics show that the breakdown voltage and time to breakdown are very high and uniform, indication that our oxide is defect free and suitable for DRAM capacitor dielectric. To our knowledge this is the best oxide quality obtained up tp now around 10 nm.

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3,000 V급 초접합 필드링을 갖는 초접합 IGBT 제작에 관한 연구 (The Fabrication of Super Junction IGBT with 3,000 V Class Super Junction Field Rings)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제28권9호
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    • pp.551-554
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    • 2015
  • This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.

인위적으로 발생시킨 과도 전자파에 노출된 CMOS와 TTL IC의 오동작 및 파괴 특성 (Breakdown and Destruction Characteristics of the CMOS and TTL ICs by Artificial Electromagnetic Waves)

  • 홍주일;황선묵;한승문;허창수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1512-1513
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    • 2007
  • In this paper the influence of CMOS- and TTL-technology on the breakdown and destruction effects by artificial electromagnetic waves is determined. Different electronic devices(3 CMOS & 5 TTL) were exposed to high amplitude electromagnetic waves. CMOS ICs were occurred only destruction below the max electric field and TTL ICs were occurred breakdown and destruction below the max electric field. The SEM analysis of the destruction devices showed onchipwire and bondwire destruction like melting due to thermal effect. The test results are applied to the data which understand electromagnetic wave effects of electronic equipments.

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