• Journal of IKEEE
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• v.26 no.1
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• pp.50-55
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• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.

• Korean Journal of Materials Research
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• v.33 no.7
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• pp.285-294
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• 2023

Porous ceramics are used in various industrial applications based on their physical properties, including isolation, storage, and thermal barrier properties. However, traditional manufacturing environments require additional steps to control artificial pores and limit deformities, because they rely on limited molding methods. To overcome this drawback, many studies have recently focused on fabricating porous structures using additive manufacturing techniques. In particular, the binder jet technology enables high porosity and various types of designs, and avoids the limitations of existing manufacturing processes. In this study, we investigated process optimization for manufacturing porous ceramic filters using the binder jet technology. In binder jet technology, the flowability of the powder used as the base material is an important factor, as well as compatibility with the binder in the process and for the final print. Flow agents and secondary binders were used to optimize the flowability and compatibility of the powders. In addition, the effects of the amount of added glass frit, and changes in sintering temperature on the microstructure, porosity and mechanical properties of the final printed product were investigated.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.2
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• pp.213-218
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• 2010

A cooling system utilizing liquid helium to chill the cryopanel (800 mm $\times$ 700 mm dimensions) down to 4.2 K was designed, implemented, and tested to verify the role of the cryopanel as a heat sink for the payload of a spacecraft inside the large thermal vacuum chamber (effective dimensions : 8 m ($\Phi$) $\times$ 10 m (L)) of KARI (Korea Aerospace Research Institute). Two LHe (Liquid Helium) Dewars, one for the main supply and the other for refilling, were used to supply liquid helium or cold helium gas into this cryopanel, and flow control for the target temperature of the cryopanel within requirements was done through fine adjustment of the pressure inside the LHe Dewars. The return helium gas from the cryopanel was reused as a thermal barrier to minimize the heat influx on the core liquid helium supply pipe. The test verified a cooling time of around three hours from the ambient temperature to 40 K (combined standard uncertainty of 194 mK), the capacity for maintaining the cryopanel at intermediate temperatures, and a 1 K uniformity over the entire cryopanel surface at around 40 K with 20 W cooling power.

• Polymer(Korea)
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• v.39 no.1
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• pp.88-98
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• 2015

4-Amino-N-hexadecylbenzamide-graphene sheets (AHB-GSs), used in the preparation of the polyimide (PI) nanocomposite films, were synthesized by mixing a dispersion of graphite oxide with a solution of the ammonium salt of AHB. The atomic force microscope image of functionalized-GS on mica and a profile plot revealed the average thickness of AHB-GS to be ~3.21 nm. PI films were synthesized by reacting 4,4'-biphthalic anhydride and bis(4-aminophenyl) sulfide. PI nanocomposite films containing various contents of AHB-GS over the range of 0-10 wt% were synthesized using the solution intercalation method. The PI nanocomposite films under different thermal imidization temperatures, 250 and $350^{\circ}C$, were examined. The graphenes, for the most part, were well dispersed in the polymer matrix despite some agglomeration. However, micrometer-scale particles were not detected. The average thickness of the particles was <10 nm, as revealed from the transmission electron microscope images. Only a small amount of AHB-GS was required to improve the gas barrier, and electrical conductivity. In contrast, the glass transition and initial decomposition temperatures of the PI hybrid films continued to decrease with increasing content of AHB-GS up to 10 wt%. In general, the properties of the PI hybrid films heat treated at $350^{\circ}C$ were better than those of films heat treated at $250^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.17-22
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• 2016

Flexible organic light-emitting diode (OLED) devices consist of multi-stacked thin films or layers comprising organic and inorganic materials. Due to thermal coefficient mismatch of the multi-layer films, warpage of the flexible OLED is generated during high temperature process of each layer. This warpage will create the critical issues for next production process, consequently lowering the production yield and reliability of the flexible OLED. In this study, we investigate the warpage behavior of the flexible OLED for each bonding process step of the multi-layer films using the experimental and numerical analysis. It is found that the polarizer film and barrier film show significant impact on warpage of flexible OLED, while the impact of the OCA film on warpage is negligible. The material that has the most dominant impact on the warpage is a plastic cover. In order to minimize the warpage of the flexible OLED, we estimate the optimal material properties of the plastic cover using design of experiment. It is found that the warpage of the flexible OLED is reduced to less than 1 mm using a cover plastic of optimized properties which are the elastic modulus of 4.2 GPa and thermal expansion coefficient of $20ppm/^{\circ}C$.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.5 no.2
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• pp.155-169
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• 2007

A transport container for a 500 kCi tritium storage vessel was developed, which could be used for the transport of metal tritide from Wolsong TRF facility to a disposal site. The structural, thermal, shielding, and confinement analyses were performed for the container in a view of Type B. As a result of structural analysis, the developed container sustained its integrity under normal and accidental conditions. The maximum temperature increase of the inner storage vessel by radiation was evaluated at $134.8^{\circ}C at room temperature. In $800^{\circ}C$ fire test, The thermal barrier of container sustained the inner vessel at $405^{\circ}C after 30 min, which temperature was allowable for the container integrity since maximum design temperature of inner vessel was $550^{\circ}C. In the evaluation of the shielding, the activity of radiation was nearly zero on the outer surface of inner vessel. Consequently the transport container for a 500 kCi tritium was evaluated to pass all the safety tests including accidental condition, so it was concluded that the designed transport container is proper to be used.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.4
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• pp.287-297
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• 2014

For several decades, many countries operating nuclear power plants have been studying the various disposal alternatives to dispose of the spent nuclear fuel or high-level radioactive waste safely. In this paper, as a direct disposal of spent nuclear fuels for deep geological disposal concept, the rod consolidation from spent fuel assembly for the disposal efficiency was considered and analyzed. To do this, a concept of spent fuel rod consolidation was described and the related concepts of disposal canister and disposal system were reviewed. With these concepts, several thermal analyses were carried out to determine whether the most important requirement of the temperature limit for a buffer material was satisfiedin designing an engineered barrier of a deep geological disposal system. Based on the results of thermal analyses, the deposition hole distance, disposal tunnel spacing and heat release area of a disposal canister were reviewed. And the unit disposal areas for each case were calculated and the disposal efficiencies were evaluated. This evaluation showed that the rod consolidation of spent nuclear fuel had no advantages in terms of disposal efficiency. In addition, the cooling time of spent nuclear fuels from nuclear power plant were reviewed. It showed that the disposal efficiency for the consolidated spent fuel rods could be improved in the case that cooling time was 70 years or more. But, the integrity of fuels and other conditions due to the longer term storage before disposal should be analyzed.