• Title/Summary/Keyword: The third harmonic-wave

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Nondestructive Evaluation of Adhesive Bonding Quality by Measurements of Peak Amplitude of Simulated Stress Wave (모의 음향 방출 신호의 Peak Amplitude측정을 통한 복합 재료 접합부의 비파괴평가)

  • Son, Y.H.;Lee, J.O.;Lee, S.H.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.15 no.2
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    • pp.357-363
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    • 1995
  • Disbond size of adhesively bonded single lap and double lap joints CFRP composite specimens has been evaluated using acousto-ultrasonic(AU) technique. Frequency spectra for all specimens were obtained by measuring peak amplitude of the stress wave propagated through the bond-lines. By analyzing these frequency spectra, peak amplitude was found to be proportional to fractional bonding area and to be maxima at the fundamental and the third order higher harmonic frequencies of specimen thickness mode. The disbond size can be evaluated quantitatively and this technique can be applied to real structures if the reference specimens are prepared in advancve.

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Design of 60 ㎓ Millimeter-Wave Frequency Doubler using Distributed Structure

  • Park, Won;Lee, Kang-Ho;Kim, Sam-Dong;Park, Hyung-Moo;Rhee, Jin-Koo;Koo, Kyung-Heon
    • Journal of electromagnetic engineering and science
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    • v.4 no.2
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    • pp.87-92
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    • 2004
  • A millimeter-wave distributed frequency doubler has been designed with distributed block and frequency tunable output reflectors. The simulated conversion loss of 9.5 ㏈ to 7.7 ㏈ from 54.6 ㎓ to 62.4 ㎓ output frequencies is achieved with fundamental and third harmonic signal rejections of more than 10 ㏈c. The fabricated chip has the size of 1.2 mm${\times}$1.0 mm. Some measured results of frequency and bias dependent characteristics are presented for the fabricated PHEMT MMIC frequency doubler. The designed doubler has two transistors, and if one of the transistors fails the doubler unit still operates with reduced gain. The failure effect of the PHEMT has been simulated, and compared to the measured data of which one PHEMT is not operating properly.

Designing High Power Amp for CDMA-Repeater used Fuzzy Logic (퍼지로직을 이용한 CDMA 중계기의 High Power Amp 설계)

  • Kim, Sung-Sik;Cho, Hyun-Chan;Oh, Chang-Heon;Lee, Kyu-Young
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2003.09b
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    • pp.118-121
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    • 2003
  • Generally, the repeater in CDMA(Code Division Multiple Access) included HPA(HI-Power Amplifier) to amplifier communication signals. Also , HPA contained PD(Predistortor) to maintain the linearization of amplifier characteristics. A configuration component of PD have been used electricity nonlinear devices such that diode. But this diode takes many influences at the circumstance temperature. Consequently, it can't maintain output linearization, and drop the communication quality. The manufacturer set bias of the circuit to the manual at the first out of ware-house low But the Q-point changes according to the change of the high temperature or low temperature. Therefore, we designed a system to maintain the Q-point by FDM(Fuzzy Decision Maker) in this paper.

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Decision making for CDMA HPA Bias used Fuzzy Logic Controller (퍼지제어기를 이용한 CDMA중계기의 최적동작점 결정)

  • 김성식;홍광진;조현찬;오창헌;김두용;이규영
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2003.05a
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    • pp.283-286
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    • 2003
  • Generally, the repeater in CDMA(Code Division Multiple Access) included HPA(HI-Power Amplifier) to amplifier communication signals. Also, HPA contained PD(Predistortor) to maintain the linearization of amplifier characteristics A configuration component of PD have been used electricity nonlinear devices such that diode. But this diode takes many influences at the circumstance temperature. Consequently, st can't maintain output linearization, and drop the communication Duality. The manufacturer set bias of the circuit to the manual at the first out of ware-house low. But the Q-point changes according to the change of the high temperature or low temperature. Therefore, we designed a system to maintain the Q-point by FDM(Fuzzy Decision Maker) in this paper.

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Synthesis and Nonlinear Optical Properties of Poly(4-nitrophenylallylamine) Derivatives

  • 김영운;이광섭;진정일;최길영
    • Bulletin of the Korean Chemical Society
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    • v.17 no.7
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    • pp.607-612
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    • 1996
  • A series of new NLO-active poly(4-nitrophenylallylamine) derivatives was synthesized by the nucleophilic substitution reaction of several substituted 4-nitrohalobenzenes and poly(allylamine hydrochloride). All polymers obtained were amorphous and their glass transition temperatures (Tg) were observed around 148-160 ℃. For each of these polymers, their specific Tg values were dependent on characteristic electronic structures. UV-visible absorption spectra showed maximum absorption intensity at 355-393 nm for π-π* transition of alkylaminonitrophenyl groups. The χ(2)value of poly(4-nitrophenylallylamine), as determined by the second harmonic generation at 1064 nm, for a thin polymer film poled at an elevated temperature, was 1.4x10-8esu. The third-order NLO properties of poly(4-nitrophenylallylamine) derivatives were evaluated through measurement of degenerate four-wave mixing technique and χ(3) coefficient in the range of 2.7~3.2x10-12 esu at 602 nm was found with 400 fs laser pulses.

Variation in Leakage Current Characteristics of Polymer Insulator for Various Environmental Condition (여러 환경조건에 대한 고분자애자의 누설전류 특성 변화)

  • Park Jae-Jun;Choi In-Hyuk;Lee Dong-il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.169-175
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    • 2006
  • This study investigated variation leakage current maximum value and waveform considering applied voltage phase angel by simulating three environmental conditions, such as fog, salt fog, and kaolin contamination .As the result of applied voltage phase angel characteristics, leakage currents presented almost in phases in the early stage regardless of environmental conditions just after applying the voltage, and the phase of leakage currents certain phase lags for the discharge of the applied voltage when surface discharges occurred due to the continuous environmental contamination. In addition, the difference in phase significantly increased according to the intensity of discharges. The change in distortion rates according to the environmental contamination presented a nearly same level just after applying the voltage. The distortion rate of third harmonic for the fundamental wave presented by the order of fog>salt fog>kaolin when surface discharges occurred due to the applied voltage for certain continued periods. In the case of the fog and salt fog, the scale of spectrums decreased according to the increase in frequencies from the results of the analysis of high frequencies. In addition, the even number frequency presented a relatively large level compared to the odd number frequency under the kaolin contamination.

Improved Power Performances of the Size-Reduced Amplifiers using Defected Ground Structure (결함 접지 구조를 이용하여 소형화한 증폭기의 개선된 전력 성능)

  • Lim, Jong-Sik;Jeong, Yong-Chae;Han, Jae-Hee;Lee, Young-Taek;Park, Jun-Seok;Ahn, Dal;Nam, Sang-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.754-763
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    • 2002
  • This paper discusses the improved power performances of the size-reduced amplifier using defected ground structure (DGS). The slow-wave effect and enlarged electrical length occur due to the additional equivalent circuit elements of DGS. Using these properties, it is possible to reduce the length of transmission lines in order to keep the same original electrical lengths by inserting DGS on the ground plane. The matching and performances of the amplifier are preserved even after DGS patterns have been inserted. While there is no loss in the size-reduced transmission lines at the operating frequency, but there exists loss to some extent at harmonic frequencies. This leads to the more excellent inherent capability of harmonic rejection of the size-reduced amplifier. Therefore, it is expected tile harmonics of the size-reduced amplifier are smaller than those of the original amplifier. The measured second harmonic, third order intermodulation distortion (IMD3), and adjacent channel power ratio (ACPR) of the size-reduced amplifier are smaller than those of the original amplifier by 5 dB, 2~6 dB, and 1~4 dB, respectively, as expectation.

Laser-induced chemical vapor deposition of tungsten micro patterns for TFT-LCD circuit repair (레이저 국소증착을 이용한 TFT-LCD회로 수정5 미세 텅스텐 패턴 제조)

  • Park Jong-Bok;Kim Chang-Jae;Park Sang-Hyuck;Shin Pyung-Eun;Kang Hyoung-Shik;Jeong Sung-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.8 s.173
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    • pp.165-173
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    • 2005
  • This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

Laser-induced chemical vapor deposition of micro patterns for TFT-LCD circuit repair (레이저 국소증착을 이용한 TFT-LCD 회로수정 패턴제조)

  • Park Jong-Bok;Jeong Sungho;Kim Chang-Jae;Park Sang-Hyuck;Shin Pyung-Eun;Kang Hyoung-Shik
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.657-662
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    • 2005
  • In this study, the deposition of micrometer-scale metallic interconnects on LCD glass for the repair of open-circuit type defects is investigated. Although there had been a few studies Since 1980 s for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and $W(CO)_6$ was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 nm depending on laser power and scan speed while the width was controlled between $3\~50{\mu}$ using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below 1 $O\cdot{\mu}m$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

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