• International Commerce and Information Review
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• v.1 no.1
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• pp.227-251
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• 1999

The realization of the Internet and Electronic Commerce through the progress development of the information & communication has changed the transition of the financial settlement system all of the world. And Electronic Commerce has becoming the most important tools to decide the value from the real money, existing bills, coins to the Electronic Money. Electronic Money is very useful materials with Electronic Wallet at cyber times in the future. So that reason, I studied Electronic Money's present situation & after development direction in Korea. And the purpose of this paper is to introduce Electronic Money's modem definition and to analysis the common use situation, operation at home and abroad at Electronic Commerce times. In add to investigated advanced countries Electronic Money utilization and drawed out current events point. So I suggest to this like point, in honour of Electronic Money's common use in Korea. First to establish universality. Second, to make various terminals and the powerful networking structure. Third, to establish stability. Fourth, renovating the system goes side by side. Futhermore, to develop Electronic Money's, it is necessary to make skilled labour and to learn foreign advanced technology.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.884-890
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• 1996

We have investigated a structural change of Si(100)-($2 \times 1$)-Sb surface caused by atomic hydrogen adsorption at room temperature using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). We found that when atomic hydrogen adsorbs on the Si(100)-($2 \times 1$)-Sb surface, (1) the partial desorption of Sb atoms from the Si(100) surface occurs even at room temperature, (2) the rest Sb atoms are displaced from their original positions and form an almost two-dimensional layer with dispersive distribution of Sb atoms, and (3) the structural transformation into the Si(100)-($1 \times 1$)-H periodicity is induced by the formation of the $1 \times 1$-H dihydride phase on the Si substrate.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.66-69
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• 2000

In this paper, we propose a progressive transmission of a video using a 2$\times$2$\times$2 DCT First of all, the video data is transformed into multiresolution represented video data using a 2$\times$2$\times$2 DCT. Then. it is represented by a 3-D EZT(Embedded Zero Tree) coding fur the progressive transmission with a bit-rate scalability. The proposed progressive transmission algorithm needs much less computations and buffer memories than the higher-order convolution based wavelet filter. Also, since the 2$\times$2$\times$2 DCT requires independent local computations, parallel processing can be applied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.203-211
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• 2012

This paper proposes a $16{\times}16$ and $32{\times}32$ inverse transform architecture for HEVC (High Efficiency Video Coding). HEVC large transform of $16{\times}16$ and $32{\times}32$ suffers from huge computational complexity. To resolve this problem, we proposed a new large inverse transform architecture based on hardware reuse. The processing element is optimized by exploiting fully recursive and regular butterfly structure. To achieve low area, the processing element is implemented by shifters and adders without multiplier. Implementation of the proposed 2-D inverse transform architecture in 0.18 ${\mu}m$ technology shows about 300 MHz frequency and 287 Kgates area, which can process 4K ($3840{\times}2160$)@ 30 fps image.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.164-165
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• 2008

현재의 소자간 연결을 위해 사용되는 금속배선 PCB의 한계로 인해 보다 고속/대용량의 광PCB가 크게 각광받고 있다. 본 논문에서는 광PCB와 소자간의 전기적 연결을 위해 사용되는 솔더 범프를 전도성 에폭시를 사용하여 마이크로 머시닝 공정을 통해 구현하고 제작된 솔더 범프의 I-V 특성을 살펴보았다. 제작된 100 um $\times$ 100 um $\times$ 25 um 와 300 um $\times$ 300 um $\times$ 25 um 의 샘플에서 각각 30 m$\Omega$과 90m$\Omega$의 전기저항을 얻을 수 있었다. 이를 통해 향후 센서및 엑츄에이터 시스템과 광 MEMS 등의 여러 분야에서 전도성 에폭시 솔더 범프를 이용하여 우수한 성능의 플립칩 본딩을 구현할 수 있을 것이다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.1
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• pp.77-83
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• 2010

Radiation characteristics of $5{\times}4$ pin array patch antennas are compared to those of $5{\times}2$ pin array patch antennas for several substrate thicknesses using the computer simulation. Since the number of unit cells of a $5{\times}2$ pin array patch antenna is half of that of a $5{\times}4$ pin array patch antenna, the number of pins used in a $5{\times}2$ pin array patch antenna is half of that in a $5{\times}4$ pin array patch antenna and the patch width of a $5{\times}2$ pin array patch antenna is very small compared to that of a $5{\times}4$ pin array patch antenna. However, the radiation characteristics of a $5{\times}2$ pin array patch antenna are almost similar to those of a $5{\times}4$ pin array patch antenna.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.433-436
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• 2018

A total internal reflection (TIR) linear lens of size $190(W){\times}5(D){\times}2.1(H)mm^3$ has a directivity of $25^{\circ}$ and was made of a polydimethysiloxane (PDMS) silicone resin with a refractive index of 1.4 and a transmittance of 93% at 365 nm UV wavelength. A light source with a size of $190{\times}25.5mm^2$ was fabricated by installing a TIR linear lens on a chip on board (COB) type LED module mounted with a $1.1{\times}1.1mm^2$ size UV LED. The optical characteristics of the light source showed a maximum irradiation density of $3,840mW/cm^2$ at a working distance of 5 mm and a high uniformity of 91.6% over a $150{\times}25mm^2$ irradiation area. The thermal characteristics of the light source were measured at a supply current of 500 mA. The saturation temperature was reached after 30 min of operation, and measured to be $95^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.97-100
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• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the characteristic of the GaN layer. We have changed the deposition time of SiN mask from 45s to 5min and obtain th optimum condition in 45s. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask and the carrier concentraion increased from $3.5{\times}10^{16}cm^{-3}$ to $1.8{\times}10^{17}cm^{-3}$. We have thus shown that the SiN mask improved significantly the optical properties of the GaN layer.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.79-83
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• 2003

Multi-port($2{\times}2$port, 1port) rectangular waveguide discontinuity problem has been analyzed by use of $TE^x_{mn}$ (mono)mode matching method. Matrix size can be reduced significantly in comparison with $TE_{mn}&TM_{mn}$(full-wave)mode matching method. the present results is compared with those by CST MicroWave Studio to validate the presint method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.