• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.79-89
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• 2014

It has been an increase in consumers who want a high-capacity and fast speed by the newly diffused mobile device(Smart phones, Ultra books, Tablet PC). As a result, the demand for Flash Memory is constantly increasing. Flash Memory is separated by a NAND-type and NOR-type. NAND-type Flash Memory speed is slow, but price is cheaper than the NOR-type Flash Memory. For this reason, NAND-type Flash Memory is widely used in the mobile market. So Fault Detection is very important for Flash Memory Test. In this paper, Proposed PMBIST for Pattern Test of NAND-type Flash Memory improved Fault detection.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.122-130
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• 2013

The demand and the supply are increasing sharply in accordance with the growth of the Memory Semiconductor Industry. The Flash Memory above all is being utilized substantially in the Industry of smart phone, the tablet PC and the System on Chip (SoC). The Flash Memory is divided into the NOR-type Flash Memory and the NAND-type Flash Memory. A lot of study such as the Built-In Self Test (BIST), the Built-In Self Repair (BISR) and the Built-In Redundancy Analysis (BIRA), etc. has been progressed in the NOR-type fash Memory, the study for the Built-In Self Test of the NAND-type Flash Memory has not been progressed. At present, the pattern test of the NAND-type Flash Memory is being carried out using the outside test equipment of high price. The NAND-type Flash Memory is being depended on the outside equipment as there is no Built-In Self Test since the erasure of block unit, the reading and writing of page unit are possible in the NAND-type Flash Memory. The Built-In Self Test equipped with 2 kinds of finite state machine based structure is proposed, so as to carry out the pattern test without the outside pattern test equipment from the NAND-type Flash Memory which carried out the test dependant on the outside pattern test equipment of high price.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.8-15
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• 1993

A concrete disign of memory circuit is presented aiming at the application of sliding diagonal test patterns. A modification of sliding diagonal test pattern includes the complexity reduction from O(n$^{32}$) to O(n) using parallel test memory concept. The control circuit design was based on delay-element, and verified via logic and circuit simulation. Area overhead was evaluated based on physical layout using a 0.7 micron design rule resulting in about 1% area increase for a typical 16Mbit DRAM.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.147-155
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• 2017

A new endurance test-pattern generation on NAND-flash memory is proposed to improve test cost. We mainly focus on the correlation between the data-pattern and the device error-rate during endurance testing. The novelty is the development of testing method using quasi-random pattern based on device architectures in order to increase the test efficiency during time-consuming endurance testing. It has been proven by the experiments using the commercial 32 nm NAND flash-memory. Using the proposed method, the error-rate increases up to 18.6% compared to that of the conventional method which uses pseudo-random pattern. Endurance testing time using the proposed quasi-random pattern is faster than that of using the conventional pseudo-random pattern since it is possible to reach the target error rate quickly using the proposed one. Accordingly, the proposed method provides more low-cost testing solutions compared to the previous pseudo-random testing patterns.

• Proceedings of the KIEE Conference
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• 2004.05a
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• pp.153-155
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• 2004

In this paper, we design the memory tester chip playing an important role in the memory tester as central parts. Memory tester has the sixteen inner instructions to control the test sequence and the address and data signals to DUT. These instructions are saved in memory with each block such as sequencer and pattern generator. Sequencer controls the test sequence according to instructions saved in the memory. And Pattern generator generates the address and data signals according to instructions saved in the memory, too. We can use these chips for various functional test of memory.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.82-86
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• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.33-40
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• 2008

As the speed of memory is improved vey fast the advanced test equipments are needed to test the ultra-high speed memory devices efficiently. It is necessary to develop the Algorithmic Pattern Generator (ALPG) that tests fast memory devices effectively using the instructions that testers want to use. In this paper, we propose a new parallel ALPG for the ultra-high speed memory testing. The proposed ALPG can generate patterns for fast memory devices at high speed using manual instructions by the Instruction Analyzer.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.6
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• pp.1038-1045
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• 1994

In this paper, algorithm and built-in test circuit for testing all PSF(Pattern Sensitive Fault) occuring in CAM(Content Addressable Memory) are proposed. That is, built-in test circuit that uses minimum additional circuit without external equipment is designed. Additional circuit consist`s of parallel comparator, error detector, and modified decoder for parallel testing. Besides, the study on eulerian path for effectiv test pattern is carried out simultaneously. Consequently, using proposed algorithm, we can test all contents of CAM with 325+2b(b:number of bits) operations regardless of number of words. The area occupied by test circuit is about 7.5% of total circuit area.

• Electrical & Electronic Materials
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• v.10 no.4
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• pp.349-354
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• 1997

This paper aims at studying the improvement of test method for t-weight sensitive fault (t-wsf) detect. The development of RAM fabrication technology results in not only the increase at device density on chips but also the decrease in line widths in VLSI. But, the chip size that was large and complex is shortened and simplified while the cost of chips remains at the present level, in many cases, even lowering. First of all, The testing patterns for RAM fault detect, which is apt to be complicated , need to be simplified. This new testing method made use of Local Lower Bound (L.L.B) which has the memory with the beginning pattern of 0(l) and the finishing pattern of 0(1). The proposed testing patterns can detect all of RAM faults which contain stuck-at faults, coupling faults. The number of operation is 6N at 1-weight sensitive fault, 9,5N at 2-weight sensitive fault, 7N at 3-weight sensitive fault, and 3N at 4-weight sensitive fault. This test techniques can reduce the number of test pattern in memory cells, saving much more time in test, This testing patterns can detect all static weight sensitive faults and pattern sensitive faults in RAM.

• Journal of the Korea Society of Computer and Information
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• v.14 no.3
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• pp.139-147
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• 2009

The memory based reasoning just stores in the memory in the form of the training pattern of the representative pattern. And it classifies through the distance calculation with the test pattern. Because it uses the techniques which stores the training pattern whole in the memory or in which it replaces training patterns with the representative pattern. Due to this, the memory in which it is a lot for the other machine learning techniques is required. And as the moreover stored training pattern increases, the time required for a classification is very much required. In this paper, We propose the EAS(Evaluation And Selection) algorithm in order to minimize memory usage and to improve classification performance. After partitioning the training space, this evaluates each partitioned space as MDL and PM method. The partitioned space in which the evaluation result is most excellent makes into the representative pattern. Remainder partitioned spaces again partitions and repeat the evaluation. We verify the performance of Proposed algorithm using benchmark data sets from UCI Machine Learning Repository.