• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.81-114
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• 1999

The strain, surface and inerfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode an the Volmer-Wever (VW) mode. The free energy for each mode was estimated as functions of the thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the InPSb/InP and GaPSb/GaP systems which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which tow-dimensional (2D) layers precede the three-dimensional (3D) nucleation in the SK mode at x=1.0 depnds on the lattice misfit.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.499-505
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• 2001

The behaviour of ionic compound crystals under combined chemical and externally applied electrical potential gradients is discussed. Firstly, a systematic overview is given. Then a formal analysis follows. The transport equations of the ions and the electric defects predict that even with reversible electrodes demixing, and in particular decomposition of the compound will occur if the applied d.c. current density is sufficiently high. These predictions are illustrated by appropriate experiments. With the help of the solid solution (Me, Fe)O, where Fe-ions are the dilute species, we investigate experimentally the behaviour of a ternary ionic crystal under a d.c. electric current load. All the compounds were placed in a galvanic cell, and the internal reactions which then could be observed were driven by the electric field in this cell. In addition, we discuss the influence of the electric field on the classical solid state reaction AX+BX=ABX$_2$, if again the reaction couple is placed in a galvanic cell.

• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.464-466
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• 1990

A ternary Zintl phase material of the formula $K_2Ga_2Sb_4$ has been prepared directly from reaction of the elements following a high temperature procedure. The compound consists of potassium ions and planar ribbons of $(Ga_2Sb_4^{-2})_{\infty}$ consisting of five membered $[Ga_2Sb_3]$ rings bridged by Sb atoms. The variable temperature specific resistivity measurements show the material to be an intrinsic semiconductor.

• Bulletin of the Korean Chemical Society
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• v.24 no.8
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• pp.1181-1187
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• 2003

Condensation of 4-cyano-5,6-dimethyl-3-pyridazinone 1 with aromatic aldehydes gave the novel styryl derivatives 2a-c. Refluxing of compound 2a with phosphorus oxychloride furnished 3-chloropyridazine derivative 3. Compound 3 was reacted with thiourea and produced pyridazine-3(2H)thione 4. Thieno[2,3-c]- pyridazines 5a-e were achieved by cycloalkylation of compound 4 with halocompounds in methanol under reflux and in the presence of sodium methoxide. Also, refluxing of compound 4 with N-substituted chloroacetamide in the presence of potassium carbonate afforded thienopyridazines 6a-e. Cyclization of compound 6 with some electrophilic reagents as carbon disulfide and triethyl orthoformate furnished the novel pyrimido[4',5':4,5]thieno[2,3-c]pyridazines 12 and 13a-c, respectively. Diazotisation of compound 6 with sodium nitrite in acetic acid produced the pyridazino[4',3':4,5]thieno[3,2-d][1,2,3]triazines 14a-c. Ternary condensation of compound 1, aromatic aldehydes and malononitrile in ethanol containing piperidine under reflux afforded the novel phthalazines 16a-c. Compound 3 was subjected to some nucleophilic substitution reactions with amines and sodium azide and formed the aminopyridazines 17a, b and tetrazolo[1,5-b]-pyridazine 19, respectively. The structures of the synthesized compounds were established by elemental and spectral analyses.

• Bulletin of the Korean Chemical Society
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• v.16 no.9
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• pp.870-873
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• 1995

A new ternary transition-metal selenide, Ta2Ni3Se8 has been synthesized from a eutectic halide flux. The structure of this phase has been characterized by single crystal X-ray diffraction techniques. The compound crystallizes in the orthorhombic system (D2h9-Pbam, a= 14.788(4) Å, b= 10.467(3) Å, c=3.4563(8) Å) with two formula units in the unit cell. This compound adopts the Nb2Pd3Se8 structure type. Hence, there are two chains of edge-sharing selenium trigonal prisms centered by tantalum atoms and these chains are interconnected through two kinds of nickel atoms. Nickel occupies both square planar and square pyramidal sites as does palladium in Nb2Pd3Se8. Electrical conductivity measurements indicate that this material is semiconducting.

• Macromolecular Research
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• v.17 no.10
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• pp.776-784
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• 2009

N,N-dimethyldodecylamine (tertiary amine)-modified MMT (DDA-MMT) was prepared as an organically modified layered silicate (OLS), after which styrene-butadiene rubber (SBR) nanocomposites reinforced with the OLS were manufactured via the latex method. The layer distance of the OLS and the morphology of the nanocomposites were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). By increasing the amount of N,N-dimethyldodecylamine (DDA) up to 2.5 g, the maximum values of torque, tensile strength and wear resistance of the SBR nanocomposites were increased due to the increased dispersion of the silicate layers in the rubber matrix and the increased crosslinking of the SBR nanocomposites by DDA itself. When SBR nanocomposites were manufactured by using the ternary filler system (carbon black/silica/OLS) to improve their dynamic properties as a tire tread compound, the tan $\delta$(at $0^{\circ}C$ and $60^{\circ}C$) property of the compounds was improved by using metal stearates instead of stearic acid. The mechanical properties and wear resistance were increased by direct substitution of calcium stearate for stearic acid because the filler-rubber interaction was increased by the strong ionic effect between the calcium cation and silicates with anionic surface. However, as the amount of calcium stearate was further increased above 0.5 phr, the mechanical properties and wear resistance were degraded due to the lubrication effect of the excessive amount of calcium stearate. Consequently, the SBR/organoclay nanocomposites that used carbon black, silica, and organoclay as their ternary filler system showed excellent dynamic properties, mechanical properties and wear resistance as a tire tread compound for passenger cars when 0.5 phr of calcium stearate was substituted for the conventionally used stearic acid.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.75-80
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• 1995

In order to fabricate the piezoelectric thin film of the PZT-PNN ternary compound, the metal alkoxides were used as starting materials. The electrical and crystalline properties of the thin film were evaluated. The X- RD study shows that the crystallization of the film is optimized at $550^{\circ}C$ of sintering temperature. According to the D-E hysterisis curve, the coercive field is 28.8 kV /cm, and the remanent polariztion is $18.3\;{\mu}C/cm^{2}$. The break down voltages of the thin films are $76.0\;{\sim}\;27.0\;MV/m$. When the sintering temperature is raised, the break down voltage is lowered. As a result of measuring the C-V characteristic curve of the ternary compound piezoelectric thin film, the relative dielectric constants are 406 for the composition (50:40:10), 1084 for the composition (50:30:20), 723 for the composition (45:35:20) and 316 for the composition (40:40:20).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.