• Journal of electromagnetic engineering and science
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• 제10권3호
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• Current Optics and Photonics
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• 제2권2호
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• pp.179-184
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• 2018

Terahertz (THz) wave generation by periodically poled $BaTiO_3$ (PPBT) with a quasi-phase-matching (QPM) scheme based on cascaded difference-frequency generation (DFG) is theoretically analyzed. The cascaded DFG processes comprise cascaded Stokes and anti-Stokes processes. The calculated results indicate that the cascaded Stokes processes are stronger than the cascaded anti-Stokes processes. Compared to a noncascaded Stokes process, THz intensities from $20^{th}$-order cascaded Stokes processes increase by a factor of 30. THz waves with a maximum intensity of $0.37MW/mm^2$ can be generated by $20^{th}$-order cascaded DFG processes when the optical intensity is $10MW/mm^2$, corresponding to a quantum conversion efficiency of 1033%. The high quantum conversion efficiency of 1033% exceeds the Manley-Rowe limit, which indicates that PPBT is an excellent crystal for THz wave generation via cascaded DFG.

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.169-173
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• 2016

Terahertz (THz) generation by a GaP ridge waveguide with a collinear modal phase-matching scheme based on cascaded difference frequency generation (DFG) processes is theoretically analyzed. The cascaded Stokes interaction processes and the cascaded anti-Stokes interaction processes are investigated from coupled wave equations. THz intensities and quantum conversion efficiency are calculated. Compared with non-cascaded DFG processes, THz intensities from 11-order cascaded DFG processes are increased to 5.48. The quantum conversion efficiency of 177.9% in cascaded processes can be realized, exceeding the Manley-Rowe limit.

• Current Optics and Photonics
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• 제1권2호
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• pp.138-142
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• 2017

Terahertz (THz) generation by periodically-poled $KTiOPO_4$ (PPKTP) with a quasi-phase-matching scheme based on cascaded difference frequency generation (DFG) processes is theoretically analyzed. The cascaded Stokes interaction processes and the cascaded anti-Stokes interaction processes are investigated from coupled wave equations. THz intensities and quantum conversion efficiency are calculated. Compared with non-cascaded DFG processes, THz intensities from 10-order cascaded DFG processes are increased to 5.53. The quantum conversion efficiency of 479.4% in cascaded processes, which exceeds the Manley-Rowe limit, can be realized.

• Journal of the Optical Society of Korea
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• 제19권3호
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• pp.297-302
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• 2015

Terahertz (THz) wave generation from bulk and periodically poled $LiTaO_3$ (PPLT) with a Cherenkov phase matching scheme is numerically investigated. It is shown that by using the crystal birefringence of bulk $LiTaO_3$ and a grating vector of PPLT, THz waves can be efficiently generated by difference frequency generation (DFG) with a Cherenkov phase matching scheme. The frequency tuning characteristics of the THz wave via varying wavelength of difference frequency waves, phase matching angle, poling period of PPLT and working temperature are theoretically analyzed. The parametric gain coefficient in the low-loss limit and the absorption coefficient of the THz wave during the DFG process in the vicinity of polariton resonances are numerically analyzed. A THz wave can be efficiently generated by utilizing the giant second order nonlinearities of $LiTaO_3$ in the vicinity of polariton resonances.

• Journal of the Optical Society of Korea
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• 제18권1호
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• pp.60-64
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• 2014

We report the generation of 3.3-mW single-cycle terahertz (THz) pulses at 1-kHz repetition rate via optical rectification in MgO-doped prism-cut stoichiometric LiNbO3. Efficient pulse-front tilting of 800-nm pulses was realized by an optimized single-lens focusing scheme for radially-symmetric propagation of THz beams. In this geometry, nearly-diffraction-limited THz Gaussian beams with electric field strength as high as 350 kV/cm were generated. The pump-to-THz energy conversion efficiency of $1.36{\times}10^{-3}$ and the extremely high signal-to-noise ratio of ~1:15000 achieved are among the best results for 1-kHz single-cycle terahertz pulse generation ever demonstrated in room temperature operation.

• Current Optics and Photonics
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• 제2권3호
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• pp.261-268
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• 2018

Stimulated polariton scattering (SPS) from the $A_1$ transverse optical (TO) modes of $BaTiO_3$ bulk crystal generating a terahertz (THz) wave with the noncollinear phase-matching (NPM) condition is theoretically investigated. To our best knowledge, this is the first report on THz wave generation from $BaTiO_3$ bulk crystal via SPS. Phase-matching (PM) characteristics in the NPM configuration are analyzed. Effective parametric gain lengths for the Stokes and THz waves in the NPM configuration are calculated. The effective parametric gain coefficient and absorption coefficient of the THz wave in $BaTiO_3$ are theoretically simulated. The THz phonon flux densities generated via SPS in $BaTiO_3$ are theoretically calculated by solving the coupled wave equations under the NPM condition. The PM characteristics and THz-wave parametric gain characteristics in $BaTiO_3$ are compared to those in $MgO:LiNbO_3$. The results of the analysis indicate that $BaTiO_3$ is an attractive optical crystal for efficient THz wave generation via SPS.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권6호
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• 전자통신동향분석
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• 제37권2호
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• pp.11-20
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• 2022

Terahertz electromagnetic waves are considered the waves for the next generation of security checking technology. They can penetrate opaque materials, such as plastics, fibers, papers, and leathers. In addition, they are harmless to humans they cannot penetrate human skins. Moreover, because their frequencies are higher than those of millimeter waves, higher resolution and more detailed information is expected than the millimeter wave-based technologies In this study, we describe the trends and prospectives of terahertz technology as security checking technology that can be directly applied to a human body.

• ETRI Journal
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• 제36권1호
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• pp.159-162
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• 2014

In this letter, we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be $540^{\circ}C$ to $580^{\circ}C$ for the initial excess arsenic density of $2{\times}10^{19}/cm^3$ to $8{\times}10^{19}/cm^3$.