• 제목/요약/키워드: Temperature-Insensitive

Search Result 119, Processing Time 0.032 seconds

Compensation Scheme for Dead Time and Inverter Nonlinearity Insensitive to IPMSM Parameter Variations (IPMSM 파라미터 변화에 영향 받지 않는 데드타임 및 인버터 비선형성 보상기법)

  • Park, Dong-Min;Kim, Kyeong-Hwa
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.17 no.3
    • /
    • pp.213-221
    • /
    • 2012
  • In a PWM inverter-fed IPMSM (Interior Permanent Magnet Synchronous Motor) drive, a dead time is inserted to prevent a breakdown of switching device caused by the short-circuit of DC link. This distorts the inverter output voltage resulting in a current distortion and torque ripple. In addition to the dead time, nonlinearity exists in switching devices of the PWM inverter, which is generally dependent on operating conditions such as the temperature, DC link voltage, and current. The voltage disturbance caused by the dead time and inverter nonlinearity directly influences on the inverter output performance, and it is known to be more severe at low speed. In this paper, a new compensation scheme for the dead time and inverter nonlinearity under the parameter variation is proposed for a PWM inverter-fed IPMSM drive. The overall system is implemented using DSP TMS320F28335 and the validity of the proposed algorithm is verified through the simulation and experiments.

On-Chip CMOS Oscillator using PVT Compensated Circuit (공정, 전압, 온도 보상 회로를 이용한 On-Chip CMOS Oscillator)

  • Han, Do-Hee;Kwon, Ick-Jin
    • Proceedings of the IEEK Conference
    • /
    • 2008.06a
    • /
    • pp.593-594
    • /
    • 2008
  • In this article, process voltage temperature (PVT) compensated on-chip oscillator is implemented by using proportional to absolute temperature (PTAT) circuit and process compensator. Process compensator circuit based on current subtracter and PTAT circuit are proposed for compensation of oscillation frequency to cope with process variation and temperature variation. All circuit can operate in the range of $3.5{\sim}5\;V$ supply voltage. It can be applied to PVT insensitive low frequency clock reference generator.

  • PDF

Characteristics of Polysilicon Resistors with High Thermal Stability Fabricated by POCl$_{3}$ Doping and Arsenic Implantation (POCl$_{3}$ 도핑 및 비소 이온주입공정으로 제작한 높은 안정성을 갖는 다결정실리콘 저항소자 특성)

  • 이대우;노태문;구진근;남기수
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.7
    • /
    • pp.56-62
    • /
    • 1998
  • Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

  • PDF

Low Temperature Effects on the Strength and Fracture Toughness of Membrane for LNG Storage Tank (LNG 저장탱크용 멤브레인재(STS 304강)의 강도 및 파괴인성에 미치는 저온효과)

  • Kim, Jeong-Gyu;Kim, Cheol-Su;Jo, Dong-Hyeok;Kim, Do-Sik;Yun, In-Su
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.24 no.3 s.174
    • /
    • pp.710-717
    • /
    • 2000
  • Tensile and fracture toughness tests of the cold-rolled STS 304 steel plate for membrane material of LNG storage tank were performed at wide range of temperatures, 11 IK(boiling point of LNG), 153K , 193K and 293K(room temperature). Tensile strength significantly increases with a decrease in temperature, but the yield strength is relatively insensitive to temperature. Elongation at 193K abruptly decreases by 50% of that at 293K, and then decreases slightly in the temperature range of 193K to 111K. Strain hardening exponents at low temperatures are about four times as high as that at 293K. Elastic-plastic fracture toughness($J_c$) and tearing modulus($T_{mat}$) tend to decrease with a decrease in temperature. The $J_c$ values are inversely related to effective yield strength in the temperature range of 111K to 293K. These phenomena result from a significant increase in the amount of transformed martensite in low temperature regions.

Steady- and Transient-State Analyses of Fully Ceramic Microencapsulated Fuel with Randomly Dispersed Tristructural Isotropic Particles via Two-Temperature Homogenized Model-I: Theory and Method

  • Lee, Yoonhee;Cho, Bumhee;Cho, Nam Zin
    • Nuclear Engineering and Technology
    • /
    • v.48 no.3
    • /
    • pp.650-659
    • /
    • 2016
  • As a type of accident-tolerant fuel, fully ceramic microencapsulated (FCM) fuel was proposed after the Fukushima accident in Japan. The FCM fuel consists of tristructural isotropic particles randomly dispersed in a silicon carbide (SiC) matrix. For a fuel element with such high heterogeneity, we have proposed a two-temperature homogenized model using the particle transport Monte Carlo method for the heat conduction problem. This model distinguishes between fuel-kernel and SiC matrix temperatures. Moreover, the obtained temperature profiles are more realistic than those of other models. In Part I of the paper, homogenized parameters for the FCM fuel in which tristructural isotropic particles are randomly dispersed in the fine lattice stochastic structure are obtained by (1) matching steady-state analytic solutions of the model with the results of particle transport Monte Carlo method for heat conduction problems, and (2) preserving total enthalpies in fuel kernels and SiC matrix. The homogenized parameters have two desirable properties: (1) they are insensitive to boundary conditions such as coolant bulk temperatures and thickness of cladding, and (2) they are independent of operating power density. By performing the Monte Carlo calculations with the temperature-dependent thermal properties of the constituent materials of the FCM fuel, temperature-dependent homogenized parameters are obtained.

Slow Cook-Off Test and Evaluation for HTPE Insensitive Propellants (HTPE 둔감추진제 완속가열 시험평가)

  • Yoo, Ji-Chang;Lee, Do-Hyung;Kim, Chang-Kee;Jung, Jung-Young;Kim, Jun-Hyung;Seo, Tae-Seok
    • Proceedings of the Korean Society of Propulsion Engineers Conference
    • /
    • 2009.05a
    • /
    • pp.155-158
    • /
    • 2009
  • This study was investigated to know the thermal decomposition and measure the reaction time and temperature by EIDS cook-off test for the propellant ingredients and 2 kinds of HTPE propellants. The thermal analysis of the propellant ingredients used in this study showed that the thermal stability of these materials decreases in the following order : AP > HTPE > AN > BuNENA. In addition, propellant HTPE 002 containing AN showed that an endothermic process at around $125^{\circ}C$ corresponding to the solid`solid phase change($II{\rightarrow}I$) of AN was followed by the exothermic process due to decomposition of BuNENA/AN until $200^{\circ}C$. HTPE 001 and HTPE 001 reacted at around $250^{\circ}C$ and $152^{\circ}C$ each other, and the temperature of them sharply increased at $115^{\circ}C$ from EIDS slow cook-off tests.

  • PDF

Determination of Reorganization Energy from the Temperature Dependence of Electron Transfer Rate Constant for Hydroquinone-tethered Self-assembled Monolayers (SAMs)

  • Park, Won-choul;Hong, Hun-Gi
    • Bulletin of the Korean Chemical Society
    • /
    • v.27 no.3
    • /
    • pp.381-385
    • /
    • 2006
  • The temperature dependence on the electron transfer rate constant $(k_{app})$ for hydroquinone redox center in $H_2Q(CH_2)_n$SH-SAMs (n = 1, 4, 6, 8, 10, and 12) on gold electrode was investigated to obtain reorganization energy $(\lambda)$ using Laviron’s formalism and Arrhenius plot of ln $[k_{app}/T^{1/2}]$ vs. T^{-1} based on the Marcus densityof-states model. All the symmetry factors measured for the SAMs were relatively close to unity and rarely varied to temperature change as expected. The electron tunneling constant $(\beta)$ determined from the dependence of the $k_{app}$ on the distance between the redox center and the electrode surface gives almost the same $\beta$ values which are quite insensitive to temperature change. Good linear relationship of Arrhenius plot for all $H_2Q(CH_2)_n$SH-SAMs on gold electrode was obtained in the temperature range from 273 to 328 K. The slopes n Arrhenius plot deduced that $\lambda$ of hydroquinone moiety is ca. 1.3-1.4 eV irrespectively of alkyl chain length of the electroactive SAM.

Temperature-dependent DC Characteristics of Homojunction InGaAs vertical Fin TFETs (동종 접합 InGaAs 수직형 Fin TFET의 온도 의존 DC 특성에 대한 연구)

  • Baek, Ji-Min;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
    • /
    • v.29 no.4
    • /
    • pp.275-278
    • /
    • 2020
  • In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (VDS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (VGS) = threshold voltage (VT), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

Brassinosteroids-mediated regulation of ABI3 is involved in high-temperature induced early flowering in plants

  • Hong, Jeongeui;Sung, Jwakyung;Ryu, Hojin
    • Journal of Plant Biotechnology
    • /
    • v.45 no.2
    • /
    • pp.83-89
    • /
    • 2018
  • The interplay of plant hormones is one of the essential mechanisms for plant growth and development. A recent study reported that Brassinosteroids (BR) and ABSCISIC ACID (ABA) interact antagonistically in early seedling developments through the BR-mediated epigenetic repression of ABSCISIC ACID-INSENSITIVE 3 (ABI3). However, the other physiological roles of the BR-mediated regulation of ABI3 and ABA responses beyond early seedling developments remain largely unknown. Here, we showed that the activation of BR signaling by high temperatures promotes flowering time through the suppression of ABI3 expressions. Elevated ambient temperature induced early flowering in wild type Col-0 plants, but not in BR-defective bri1-116 mutant plants. Conversely, a hyper BR biosynthetic dwf4-D mutant displayed more sensitive thermomorphic long shoot elongation and early flowering. Both expression patterns and physiological responses supported the biological roles of ABI3 in the regulation of floral transition and reproduction under high temperature conditions. Finally, we confirmed that the lowered expressions of the transcript and protein levels of ABI3 brought on by elevated temperature were correlated with warmth-induced early flowering phenotypes. In conclusion, our data suggest that the BR- and warmth-mediated regulation of ABI3 are important in thermomorphic reproductive phase transitions in plants.

Spatially filtered multi-field responses of piezothermoelastic cylindrical shell composites

  • Tzou, H.S.;Bao, Y.
    • Structural Engineering and Mechanics
    • /
    • v.4 no.2
    • /
    • pp.111-124
    • /
    • 1996
  • New active "intelligent" structural systems with integrated self-sensing, diagnosis, and control capabilities can lead to a new design dimension for the next generation high-performance structures and mechanical systems. However, temperature effects to the piezoelectric transducers are not fully understood. This paper is concerned with a mathematical modeling and analysis of a laminated piezothermoelastic cylindrical shell composite exposed to mechanical, electric, and thermal fields. Generic shell equations and solution procedures are derived. Contributions of spatial and time components in the mechanical, electric, and temperature excitations are discussed, and their analytical solutions derived. A laminated cylindrical shell composite with fully distributed piezoelectric layers is used in a case study; its multi-field step and impulse responses are investigated. Analyses suggest that the fully distributed actuators are insensitive to even modes due to load averaging and cancellation. Accordingly, these even modes are filtered from the total response and only the modes that are combinations of m = 1, 3, 5, ${\cdots}$ and n = 1, 3, 5, ${\cdots}$ participating in dynamic response of the shell.