• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1345-1348
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• 2013

We investigated the tribochemical and wear properties of Polytetrafluoroethylene (PTFE) based polymer matrix composites with nanoceramic (NC) ${\beta}$-sialon, and $Al_2O_3$ particles for the mechanical seal applications at low temperature. SEM showed that NC particles were homogeneously distributed in the polymer matrix and initiated the formation of the supramolecular spherulites around NC. From the temperature stimulated depolarization (TSD) current results, it was analyzed that the surface charge on nanoceramic affected the formation of the spherulites structure. 2 wt % $Al_2O_3$ NC did not degrade the mechanical properties of PTFE so that composites showed the similar values of tensile strength, elongation at the rupture and friction coefficient as those of neat PTFE. However, the composite with 2 wt % $Al_2O_3$ NC revealed the improved wear resistance, wear rate of 0.4-1.2 mg/h at room temperature and 0.28 mg/h at $-40^{\circ}C$, respectively, while the neat PTFE the 70-75 mg/h at room temperature and 70.3 mg/h at $-40^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.113-113
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• 전기학회논문지
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• 제61권9호
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• pp.1296-1299
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• 2012

$YBa_2Cu_3O_{7-x}$ thin films were fabricated by the spin-coating method on $SiO_2$/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around $720^{\circ}C-800^{\circ}C$. $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $450^{\circ}C{\sim}500^{\circ}C$ showed the single XRD patterns without the second phase, such as $YBa_2Cu_4O_8$. The thickness of films was approximately $0.23{\mu}m{\sim}0.27{\mu}m$. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $500^{\circ}C$ were $0.27{\mu}m$, $59.7M{\Omega}$ and -3.7 %/K, respecvitely.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.49-55
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• 2013

In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• 센서학회지
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• 제18권2호
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• Advances in materials Research
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• 제2권1호
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• pp.1-13
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• 2013

Lead-free compound $(Na_{0.5}Bi_{0.5})(Zr_{0.75}Ti_{0.25})O_3$ was prepared using conventional ceramic technique at $1070^{\circ}C$/4h in air atmosphere. X-ray diffraction analysis showed the formation of single-phase orthorhombic structure. Permittivity data showed low temperature coefficient of capacitance ($T_{CC}{\approx}5%$) up to $100^{\circ}C$. Complex impedance studies indicated the presence of grain boundary effect, non-Debye type dielectric relaxation and evidences of a negative temperature coefficient of resistance. The ac conductivity data were used to evaluate the density of states at Fermi level and apparent activation energy of the compound.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1375-1380
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• 1989

Mobility reduction parameters are extracted using a method based on the exploitatiion of Id-Vg and Gm-Vg characteristics of short channel n-MOSFETs in strong inversion region at room temperature. It is found that the reduction of the maximum field effect mobility, \ulcornerFE,max, with the channel length is due to i) the difference between the threshold voltage and the gate voltage which corresponds to the maximum transconductance, and ii) the channel length dependence of the mobility attenuation coefficient, \ulcorner The low field mobility, \ulcorner, is found to be independent of the channel length down to 0.25 \ulcorner ofeffective channel length. Also, the channel length reduction, -I, the mobility attenuation coefficient, \ulcorner the threshold voltage, Vt, and the source-drain resistance, Rsd, are determined from the Id-Vg and -gm-Vg characteristics n-MOSFETs.

• 대한전자공학회논문지
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• 제23권6호
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• pp.795-800
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• 1986

High value sheet resistance (Rs, 350\ulcorner/ -80K\ulcorner/) born implanted polysilicon resistors were fabricated under process conditions compatible with bipolar integrated circuits fabrications. This paper includes studies of sensitivity of Rs to doping concentration, the effect of thermal annealing temperature on Rs, temperature coefficient of resistance (TCR), the effect of polysilicon thickness on Rs and the Rs variation within a run and between runs.

• 대한전자공학회논문지
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• 제8권2호
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• pp.1-5
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• 1971

금박막의 저항을 두께와 온도(300。∼420。k)의 함수로써 측정하였다. 본논문에서는 상기의 측정결과를 Sondheimer와 Neugebauer가 제시한 이론에 따라 해석하였으며 금박막의 두께가 약 45Å일때 저항온도계수가 영이 되며 그 임계두께가 약 60Å됨을 밝혔다.

• 한국분무공학회지
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• 제21권1호
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• pp.53-57
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• 2016

The present study aims to experimentally investigate the evaporative heat transfer characteristics of Oxi-nitriding SPCC surface. Moreover, the heat transfer coefficient was examined with respect to surface temperature during droplet evaporation. In fact, the nitriding surface showed significant enhancement for anticorrosion performance compared to bare SPCC surface but the thermal resistance also increased due to the formation of compound layer. From the experimental results, the evaporative behavior of sessile droplet on nitriding surface showed similar tendency with the bare surface. Total evaporation time of sessile droplet on the nitriding surface was delayed less than 5%. The difference in heat transfer coefficient increased with the surface temperature, and the maximum difference was estimated to be around 11% at $80^{\circ}C$ surface. Thus, this nitriding surface treatment method could be useful for seawater heat exchanger industries.