• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.231-231
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• 2010

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1474-1476
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-Sic-$ZrB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $ZrB_2$, and YAG($Al_{5}Y_{3}O_{12}$). The relative density of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents. The flexural strength showed the highest value of 390.6MPa for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. Owing to crack deflection, crack bridging. phase transition and YAG of fracture toughness mechanism. the fracture toughness showed the highest value of 6.3MPa${\cdot}m^{1/2}$ for composites added with 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of 25$^{\circ}C$ to 900$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.603-608
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• 2023

Carbon black with high purity and excellent conductivity is used as a conductive filler in the semiconductive compound for EHV (Extra High Voltage) power cables of 345 kV or higher. When carbon black and CNT (carbon nanotube) are applied together as a conductive filler of a semiconductive compound, stable electrical properties of the semiconductive compound can be maintained even though the amount of conductive filler is significantly reduced. In EHV power cables, since the semi-conductive layer is close to the conductor, stable electrical characteristics are required even under high-temperature conditions caused by heat generated from the conductor. In this study, the theoretical principle that a semiconductive compound applied with carbon black and CNT can maintain excellent electrical properties even under high-temperature conditions was studied. Basically, the conductive fillers dispersed in the matrix form an electrical network. The base polymer and the matrix of the composite, expands by heat under high temperature conditions. Because of this, the electrical network connected by the conductive fillers is weakened. In particular, since the conductive filler has high thermal conductivity, the semiconductive compound causes more thermal expansion. Therefore, the effect of CNT as a conductive filler on the thermal conductivity, thermal expansion coefficient, and volume resistivity of the semiconductive compound was studied. From this result, thermal expansion and composition of the electrical network under high temperature conditions are explained.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• 한국재료학회지
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• 제16권2호
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• pp.106-110
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• 2006

We have investigated the effect of the experimental variables such as temperature and pressure on conformality of Co films deposited over high aspect ratio trenches using $Co_2(CO)_8$ as a precursor. The results show that the conformality of Co films is a strong function of temperature and process pressure. Lowering the pressure and temperature significantly improves the conformality. As the pressure decreases from 0.6 Torr to 0.2 Torr at $50^{\circ}C$, the bottom coverage of Co films over $0.2{\mu}m$ width trenches with an aspect ratio of 13 to 1 significantly increases to 85%. However, further increasing the temperature from 50 to $60^{\circ}C$ at the pressure of 0.2 Torr degrades the bottom coverage to 14%. In contrast, the extremely low pressure of 0.03 Torr allows the excellent conformal deposition of Co films up to $70^{\circ}C$. This can be attributed to the suppression of homogeneous reaction in the gas phase, which can create the intermediate products with high sticking coefficient. In addition, the Co films deposited at $50^{\circ}C$ show the low resistivity with negligible contamination. As a result, the newly developed Co process using MOCVD can be implemented into the next generation devices with complex shapes.

• 전기학회논문지
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• 제58권9호
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• pp.1757-1763
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1254_1255
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis. The relative density of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are 88.64[%], 76.80[%], 79.09[%] and 88.12[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are $6.74{\times}10^{-4}$, $4.56{\times}10^{-3}$, $1.92{\times}10^{-3}$ and $4.95{\times}10^{-3}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ are Positive Temperature Coefficient Resistance(hereafter, PTCR) in temperature ranges from 25[$^{\circ}C$] to 500[$^{\circ}C$]. It is convinced that SiC+40[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.98-98
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• 1999

Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• 한국결정성장학회지
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• 제9권5호
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• pp.498-503
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• 1999

La가 혼입된 $BaTiO_3$를 균일침전법으로 제조하여 La의 혼입량 및 입자의 크기 변화에 따른 전기적 특성을 관찰하였다. 온도변화에 따른 저항을 측정한 결과 란탄의 농도가 0.6 mol%일 때 그리고 입자의 크기가 1.0 $\mu\textrm{m}$으로 작을 때 가장 큰 PTCR 효과를 나타내었다. 상전이온도($(T_c)$) 이상에서 온도와 1/$\varepsilon_m$(T)의 관계를 나타낸 도시에 의하면 유전상수의 변화가 Curie-weiss 법칙에 잘 다름을 알 수 있었다. 측정한 비저항과 유전상수로부터 계산한 전위장벽의 높이도 란탄의 농도가 0.6 mol%일 때 입자의 크기가 1.0$\mu\textrm{m}$으로 작을 때 가장 큰 전위장벽을 나타내었다.