• Journal of Technology Innovation
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• v.9 no.2
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• pp.77-97
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• 2001

The 21st century is not only the knowledge-based society but also the unifie era for Korea. It implies that Korea should prepare for the unification, especially in the area of knowledge, science, and technology. Under this background, this paper deals with how we can prepare for the unification of South and North Korea in science and technology (S&T) area. There have been no sufficient theoretical studies in this area. This paper, therefore, argues that regional innovation system, which has been developed since the beginning of the 1990s, could be effectively applied to the S&T cooperation and unification between both Koreas. It argues that regional innovation systems can formulate sectoral innovation systems effectively, which lead to a competent national innovation system. According to this study, South and North Korean regions have complementary sectoral innovation systems that could effectively cooperate with each other. Such S&T cooperation could make a great contribution to the S&T integration between two Koreas in the future. This paper argues, therefore, that S&T cooperation between two Koreas should target the unification of South and North Korean regional innovation systems. This paper names it as the unified national innovation system.

• 한국생물공학회:학술대회논문집
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• 2003.10a
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• pp.642-642
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• 2003

• Journal of Technology Innovation
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• v.23 no.3
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• pp.1-19
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• 2015

The paper reviews the precedent studies on the relationship between standards and technological innovation. First of all, the paper defines standards, standardization, and technological innovation, respectively. Since standards have been considered as an obstacle in technological innovation, whether standards can promote innovation, or vice versa, is addressed. In addition, the role of standards and standardization in technological innovation is reviewed at the following levels: the stage of innovation, the type of innovation, and the macro or institutional aspect. Based on the above, the paper introduces at a glance the articles published in the special issue of Journal of Technology Innovation on the standards. Finally, the research questions to be studied in the future are presented.

• Journal of Korea Technology Innovation Society
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• v.1 no.3
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• pp.313-325
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• 1998

Government-Supported Research Institutes(GSRI) have done complex product(CP) development with national needs. The products to be developed have very limited demand. The most important things at CP development are technology innovation through knowledge creation and acquisition. Then, this paper suggests the technology innovation system for CP development. In CP development like satellite, government must do strategic management at national level and technology management at program level. Two managements are tools to achieve the strategic goals. The key points in CP are integration and interface among subsystems and person. From these factors and innovation system, R&D planning and practice are based on sharing and creation of knowledge. CP development projects ought to overlap and parallel for sustainable acquisition and creation of knowledge.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.4
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• pp.45-50
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• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

• Korean small business review
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• v.42 no.4
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• pp.103-122
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• 2020

This study investigates the research trends of SMEs and technological innovations in the last 40 years. Research topics and methodological trends were analyzed for 114 academic papers deals with technology innovation in SMEs. In terms of research subjects, there have been interested in the technology capability and technology accumulation of SMEs in the 1990s, but after the 2000s, research on external open innovation and innovation performance has increased. The empirical analysis studies using primary or secondary data were dominated since the 2000s. We suggest some future research directions, more systematic innovation processes in SMEs, the interactions between technology innovation and external environments, and advanced methodologies on SMEs' technology innovation studies.

• Journal of Korea Technology Innovation Society
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• v.15 no.3
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• pp.500-532
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• 2012

This study analyzed the technology innovation strategies of knowledge-based companies in the semiconductor IP industry. The theoretical approaches of this study are to i) the creation, protection and utilization of knowledge and innovation, ii) value creation from innovation, iii) modularity, timing of market entry, and the emergence and competition of standard (dominant design). Based on the theoretical analysis, I presented exploratory research hypotheses. Ultimately, this study examined the proposed hypotheses by conducting case studies on the technology innovation strategy of two leading knowledge-based companies in the semiconductor IP industry: ARM and INTEL. First, knowledge-based companies entering in the early stage of the technology cycle select the vertically-integrated technology strategy because of lower access to complementary knowledge assets, and maintain the vertically-integrated technology strategy despite the environmental change-driven differentiation of industry's value chain. Second, knowledge-based companies entering in the later stage of the technology cycle prefer the contract-based technology strategy because of its increased accessibility to complementary knowledge assets, and choose a different path of innovation strategies depending on whether their asset has the feature of discontinuity or not.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.471-472
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• 2006

The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.7-12
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• 2004

In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.