Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Comparative study of surface passivation for Metamorphic HEMT using low-k Benzocyclobutene(BCB)

Metamorphic HEMT에서 low-k Benzocyclobutene (BCB)를 이용한 표면 passivation 비교 연구

  • Baek, Yong-Hyun (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University) ;
  • Oh, Jung-Hun (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University) ;
  • Han, Min (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University) ;
  • Choi, Seok-Gyu (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University) ;
  • Lee, Bok-Hyung (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University) ;
  • Lee, Seong-Dae (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University) ;
  • Lee, Jin-Koo (Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University)
  • 백용현 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 오정훈 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 한민 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 최석규 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이복형 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2006.06.21
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Abstract

The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

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