• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.301.1-301.1
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• 2016

We report an ultraclean, cost-effective, and easily scalable method of transferring and patterning large-area graphene using pressure sensitive adhesive films (PSAFs) at room temperature. This simple transfer is enabled by the difference in wettability and adhesion energy of graphene with respect to PSAF and a target substrate. The PSAF transferred graphene is found to be free from residues, and shows excellent charge carrier mobility as high as ${\sim}17,700cm^2/V{\cdot}s$ with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas. In addition, the sheet resistance of graphene transferred by recycled PSAF does not change considerably up to 4 times, which would be advantageous for more cost-effective and environmentally friendly production of large-area graphene films for practical applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• 한국발생생물학회지:발생과생식
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• 제16권4호
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• pp.379-384
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• 2012

Lhx8 (LIM homeobox 8) gene encodes a LIM homeodomain transcriptional regulator that is preferentially expressed in germ cells and critical for mammalian folliculogenesis. However, Lhx8 DNA binding sequences are not characterized yet. We aimed to identify and characterize a cis-acting sequence of germ-cell specific transcriptional factor, Lhx8. To identify Lhx8 DNA binding element, Cyclic Amplification of Sequence Target (CAST) Analysis was performed. Electrophoretic Mobility Shift Assay (EMSA) was processed for the binding specificity of Lhx8. Luciferase assay was for the transcriptional activity of Lhx8 through identified DNA binding site. We identified a putative cis-acting sequence, TGATTG as Lhx8 DNA binding element (LBE). In addition, Lhx8 binds to the LBE with high affinity and augments transcriptional activity of luciferase reporter driven by artificial promoter containing the Lhx8 binding element. These findings indicate that Lhx8 directly regulates the transcription of genes containing Lhx8 binding element in oocytes during early folliculogenesis.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• 대한산업공학회지
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• 제30권4호
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• pp.338-345
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• 2004

Personal Digital Assistants (PDAs) have become ubiquitous and continued to gain popularity. Since PDAs have some special contexts such as mobility and limited screen size, icons are utilized frequently because icons allow us to do tasks more rapidly and effectively on PDAs like another information appliances. The study presents a cognitive approach to study human factors affecting icon design with multidimensional Scaling (MDS) analysis. In the experiment, a real PDA was used to investigate 29 attributes and2 preference ratings for 22 PDA icons by 20 Korean subjects. As a result, cognitive positioning about icons, attributes, and preference data were arranged on the two dimensional perceptual map. Attributes were grouped by simplicity, universality, activity, complexity, abstraction, static, and alphanumeric time. Subjects preferences were highly related with simplicity attributes group and positive to universality and activity attributes groups. It was also confirmed that there are some icons unfitted to the mental model of Korean. However, when icons are designed for PDAs or similar information appliances to Korean, it should be designed simply and actively with universal image fitted on target users mental model.

• 한국세라믹학회지
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• 제33권5호
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.293-297
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• 2010

We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which $In_2O_3$, $Ga_2O_3$ and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 $cm^2/V{\cdot}s$ at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.

• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.270-273
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• 2007

In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^4$ $cm^{-1}$. $Cu_2ZnSnSe_4$ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV ($CuInSnSe_2$) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of $10^{14}$ $cm^{-3}$, a mobility about $10^1$ $cm^{2{\cdot}-1.}S^{-1}$ and a resistivity at the range of $10^2-10^6$ ${\Omega}{\cdot}m$.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2012년도 추계학술대회 논문집
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• pp.394-399
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• 2012

최근 MEMS 센서는 기계상태감시에 있어서 전력소모, 크기, 비용, 이동성, 응용 등에 있어서 각광을 받고 있다. 특히, MEMS 센서는 스마트센서와 통합가능하고, 대량생산이 가능하여 가격이 저렴하다는 장점이 있다. 이와 관련한 기계상태감시를 위한 많은 실험적 연구가 수행되고 있다. 이 논문은 MEMS 센서들을 3 가지 인공지능 분류기 성능평가를 위한 비교연구에 대해 설명하고 있다. 회전기계에 MEMS 가속도와 전류센서들을 부착하여 데이터를 취득했고, 특징추출과 파라미터 최적화를 위해 Cross validation 기법을 사용하였다. MEMS 센서를 이용한 결함분류기 적용은 적합하다고 판단된다.