Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Characteristic Changes of Amorphous-InGaZnO Thin Film according to RF Power

RF Power에 따른 Amorphous-InGaZnO 박막의 특성 변화

  • 김상훈 (청주대학교 전자공학과) ;
  • 박용헌 (공군사관학교 물리학과) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • Published : 2010.04.01
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Abstract

We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which $In_2O_3$, $Ga_2O_3$ and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 $cm^2/V{\cdot}s$ at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.

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