• 전기화학회지
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• 제6권2호
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• pp.93-97
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• 2003

[ $RuCI_3{\cdot}xH_2O$ ]로부터 제조한 비정질의 $RuO_2{\cdot}nH_2O$을 사용하여 탄탈륨 집전체상의 수퍼캐패시터 전극을 제조하였다. $RuO_2{\cdot}nH_2O$ 전극과 4.8 M 황산 전해액을 사용하여 $RuO_2$ 수퍼캐패시터를 제조하였다. 탄탈륨 박막은 0.0-1.1 V(vs.SCE)에서 안정적임을 AC impedance로 확인하고 수퍼캐패시터에 적용하였다. 루테늄 산화물 수퍼캐패시터는 약 1.0 V(vs. SCE)이상에서 비가역 가수분해 반응이 진행되었다 수퍼캐패시터를 0.5V(vs. SCE)의 protonation leve을 조정하고, 전압범위를 1V로 하여 충방전 시험할 경우 우수한 특성을 나타내었다. 이때 전극전위는 $-0.004\~0.995V(vs.SCE)$의 범위이고 positive 전극 및 negative 전극의 전위범위는 각각 $-0.004\~0.515V(vs.SCE)$ 및 $-0.515\~0.995V(vs.SCE)$이었다.

• Maxillofacial Plastic and Reconstructive Surgery
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• 제41권
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• pp.52.1-52.8
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• 2019

Background: A compact passive oxide layer can grow on tantalum (Ta). It has been reported that this oxide layer can facilitate bone ingrowth in vivo though the development of bone-like apatite, which promotes hard and soft tissue adhesion. Thus, Ta surface treatment on facial implant materials may improve the tissue response, which could result in less fibrotic encapsulation and make the implant more stable on the bone surface. The purposes of this study were to verify whether surface treatment of facial implant materials using Ta can improve the biohistobiological response and to determine the possibility of potential clinical applications. Methods: Two different and commonly used implant materials, silicone and expanded polytetrafluoroethylene (ePTFE), were treated via Ta ion implantation using a Ta sputtering gun. Ta-treated samples were compared with untreated samples using in vitro and in vivo evaluations. Osteoblast (MG-63) and fibroblast (NIH3T3) cell viability with the Ta-treated implant material was assessed, and the tissue response was observed by placing the implants over the rat calvarium (n = 48) for two different lengths of time. Foreign body and inflammatory reactions were observed, and soft tissue thickness between the calvarium and the implant as well as the bone response was measured. Results: The treatment of facial implant materials using Ta showed a tendency toward increased fibroblast and osteoblast viability, although this result was not statistically significant. During the in vivo study, both Ta-treated and untreated implants showed similar foreign body reactions. However, the Ta-treated implant materials (silicone and ePTFE) showed a tendency toward better histological features: lower soft tissue thickness between the implant and the underlying calvarium as well as an increase in new bone activity. Conclusion: Ta surface treatment using ion implantation on silicone and ePTFE facial implant materials showed the possibility of reducing soft tissue intervention between the calvarium and the implant to make the implant more stable on the bone surface. Although no statistically significant improvement was observed, Ta treatment revealed a tendency toward an improved biohistological response of silicone and ePTFE facial implants. Conclusively, tantalum treatment is beneficial and has the potential for clinical applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.281-282
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• 2005

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• 한국재료학회지
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• 제12권9호
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• pp.706-711
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• 2002

High-pure tantalum powder was fabricated through Na reduction process and has been produced by using $K_2$TaF$_{7}$, and KCI, KF for raw material and diluent, respectively. A raw material and diluent were charged at the hestalloy bomb by the weight rate of 1:2, 1:1, 1:0.5 and 1:0.25 each other, investigated properties of morphology, chemical composition and yield and particle size after reduced. Ta metal has been achieved by reduction of $K_2$$TaF_{7}$ 500g with 1% sodium in excess of stoichiometric amount in the charge at a reduction temperature of $850^{\circ}C$ for 3hours. According to amount of the diluent, a formation of the powder doesn't have an effect. The diluent prevented the temperature rising caused from the heat of reaction and it maintained the speed of reducing reaction. But in the mixture ratio of raw material and diluent in the 1 : 2 and 1 : 0.25, an oxide and partially not reacted K were detected. As the amount of diluent increased, the size of tantalum powder decreased. According as raw material and the mixture ratio of diluent change from 1:0.25 to 1:2, the size is decreased from 5$\mu\textrm{m}$ to 1$\mu\textrm{m}$, and a particle size distribution which is below 325 mesh in fined powder increases from 71% to 83%. In the case of average size of Tantalum powder which is the mixture ratio (1:0.5), we would get the Ta powder with grain size about 3$\mu\textrm{m}$, which come close to the average size (2~4$\mu\textrm{m}$) of tantalum powder which is used commonly in the present is Ta powder about 3$\mu\textrm{m}$.

• 전기화학회지
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• 제5권1호
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• pp.21-26
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• 2002

비정질 루테늄 산화물을 사용한 수퍼캐패시터를 개발하였다. 삼염화루테늄 수화물$(RuCl_3{\cdot}xH_2O)$로부터 제조한 비정질의 이산화루테늄 수화물$(RuO_2{\cdot}nH_2O)$을 사용하여 수퍼캐패시터 전극을 제조하였다. 집전체로는 티타늄 및 STS 304박막에 비해 보다 넓은 전위창을 가지는 탄탈륨 박막을 사용하였다. 제조한 전극과 4.8M 황산 전해액을 사용하여 수퍼캐패시터를 제조하였다. 전극의 비정전용량은 순환전위전류분석에서 미분 최대 값으로 산화 및 환원 과정 각각 710 및 $645\;F/g-RuO_2{\cdot}nH_2O$이었으며, 평균값은 $521\;F/g-RuO_2{\cdot}nH_2O$으로 나타났다. 수퍼캐패시터를 포화카로멜기준전극에 대하여 0.5 V로 protonation level을 조정하고, 충방전 시험한 바, $151\;F/g-RuO_2{\cdot}nH_2O$의 비정전용량을 나타내었다.

• 센서학회지
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• 제4권3호
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• pp.80-88
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• 1995

본 논문에서는 Al 및 TiW 금속을 상하층 전극으로 사용하고 이들 금속사이에 절연물이 존재하는 금속-절연물-금속(metal-insulator- metal : MIM) 구조의 안티휴즈 소자를 만들고 금속층간 절연물의 성질에 따른 안티휴즈 특성에 대하여 연구하였다. 금속층간 절연물로는 R.F 스퍼터링법에의해 형성된 실리콘 산화막과 탄탈륨 산화막으로 구성된 이층 절연물을 사용하였다. 이러한 안티휴즈 구조에서 실리콘 산화막은 프로그램 전의 안티휴즈 소자를 통해 흐르는 누설전류를 감소시켰으며, 실리콘 산화막에 비해 절연 강도가 낮은 탄탈륨 산화막은 안티휴즈 소자의 절연파괴전압을 저 전압으로 낮추는 역할을 하였다. 최종적으로 제조된 $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ 구조에서 1 nA 이하의 누설전류와 약 9V의 프로그래밍 전압을 갖고 수 초내에 프로그램이 완성되는 전기적 특성이 안정된 안티휴즈 소자를 제조하였다. 그리고 이때 소자의 OFF 및 ON 저항은 각각 $3.65M{\Omega}$ 및 $7.26{\Omega}$이었다. 이와 같은 $Ta_{2}O_{5}/SiO_{2}$ 구조에서 각 절연물의 두께를 조절함으로써 측정 전압에 민감하고 재현성 있는 안티휴즈 소자를 제조할 수 있었다.

• 전기전자학회논문지
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• 제22권2호
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• pp.356-361
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• 2018

고온에서 이용 가능한 수소 센서에 관해 연구하였다. 센서는 $Pd/Ta_2O_5/SiC$으로 구성된 MOS 구조로 제작되었으며, $Ta_2O_5$ 박막은 급속 열 산화법(RTO)법으로 형성하였다. 본 연구에서는 3가지 다른 패턴의 팔라듐(Pd) 전극으로 만든 센서를 제작하여, Pd 전극의 형태가 응답 특성에 미치는 영향을 고찰하였다. 그 결과, 센서는 Pd 전극의 채워진 면적이 클수록, 정전용량의 응답특성이 개선됨을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.