• 대한화학회지
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• 제27권6호
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• pp.424-482
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• 1983

분석시료에 일정량의 표준물을 첨가한 후 희석제로 묽히는 방법을 이용하여 주석슬랙중의 $Ta_2O_5$,$Nb_2O_5$ 및 $SnO_2$를 X-선 분광 분석법으로 정량하였다. 희석제로는 $SiO_2$와 $Fe_2O_3$를 사용하였으며 첨가시료와 1:1의 비로 희석 시켰다. $Ta_2O_5$와 $SnO_2$ 의 분석결과는 $Fe_2O_3$보다 $SiO_2$로 희석시킨 것이 표준 검정곡선법에 의해 얻은 분석값과 더 잘 일치하고, $Nb_2O_5$는 이와 반대로 $SiO_2$보다 $Fe_2O_3$로 희석시킨 것이 더 잘 일치함을 보여주었다.

• 한국세라믹학회지
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• 제28권5호
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• pp.347-352
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• 1991

The effects of Ta2O3 doping on the microstructure, electrical properties and thermal expansion in Pb(Zr0.525Ti0.475)O3 ceramics were studied. Density, average grain size, electromechanical coupling factor kp and thermal expansion coefficient of unpoled and poled samples were measured as a function of Ta2O5 content. Average grain size was decreased and density increased above 0.6 mol% Ta2O5 addition. In case of 0.2 mol% addition, density showed minimum according to grain growth. Dielectric constant and electromechanical coupling factor kp were the lowest in 0.2 mol% addition increased with Ta2O5 addition.

• 한국재료학회지
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• 제4권5호
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• pp.550-555
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• 1994

본 연구에서는 반응기체 $PaCl_5$ (99.99%)와 $N_2O$(99.99%)를 사용하여 PECVD법으로 P-type(100) Si기판위에 $Ta_2O_5$ 박막을 증착시킨후 RTA 후처리를 통하여 누설전류를 개선시키고자 하였다. 실험결과, 증착온도 증가에 따라 굴절율은 일정하게 증가하였고 $500^{\circ}C$에서 최대 증착속도를 보였다. 증착된 $Ta_2O_5$막의 FT-IR 분석결과 증착온도 증가에 따라 Ta-O bond peak intensity가 증가함을 알 수 있었으며, 누설전류 특정결과 증착온도가 증가함에 따라 누설전류값이 감소함을 알 수 있었다. 또한 증착된 $Ta_2O_5$막을 RFA방법을 이용하여 후처리 한 결과, as deposited 상태보다 누설전류가 감소함을 알 수 있었으며 이는 RTA처리후 AES와 FT-IR 분석을 통하여 $Ta_2O_5$막 내의 oxygen농도와 Ta-O bond peak intensity를 측정한 결과 RTA 후처리에 의하여 $Ta_2O_5$막내의 존재하는 O-deficient 구조들이 감소한 때문이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.619-619
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• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• 한국세라믹학회지
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• 제40권12호
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• pp.1165-1169
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• 2003

이중 이온빔 스퍼터링(Dual ion-beam sputtering)을 사용하여 보조이온건의 Ar/O$_2$가스유량 변화에 따라 Si-(III) 기판과 glass에 Ta$_2$O$_{5}$ 박막을 증착시켰다. 보조 이온총의 산소 가스량의 비가 감소함에 따라서 증착되는 Ta$_2$O$_{5}$ 박막의 성장속도는 감소하였으며, 굴절률은 $O_2$ 가스의 양이 0∼12sccm인 범위에서 2.09(at 1550nm)로 일정한 값을 나타내었다. Ar:O$_2$가 3: 12인 조건에서 화학양론 조성인 Ta$_2$O$_{5}$를 형성하였으며, 표면 거칠기도 가장 작은 값을 나타내었다.나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 한국정보통신학회논문지
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• 제10권6호
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• pp.1088-1094
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• 2006

[ $Ta_2O_5$ ]절연막을 제조하기 위하여 ANODE OXIDATION 공정을 수립하였다. Electrolyte에서의 전압강하는 정전류 모드에서 예상되는 전압의 변화에는 영향을 주지 않지만, 정전압모드에서 전류의 변화에 영향을 주는 것으로 나타났다. 전해질에서의 전압 강하가 음극산화 전압과 같은 값을 갖는 경우, 전류는 $Ta_2O_5$/전해질 계면에서의 전압 강하가 증가함에 따라 logarithmic한 형태로 변화하는 것으로 나타났다. 음극 $Ta_2O_5$ 절연막 제조공정에 있어서 전해질에서의 전압 강하는 정전류 모드에서 두께의 손실을 발생시키지만, 정 전압 모드에서 다시 복원되기 때문에, 최종 두께는 음극산화 전압에 비례하는 것으로 나타났다. 음극 $Ta_2O_5$ 절연막의 전기적 특성을 조사한 결과, 항복전압은 Electrolyte의 농도와 Anodization Current 반비례하는 것으로 나타났다. 절연막의 두께가 $1500\AA$일 때 Breakdown Voltage는 350volt. 유전상수는 29로 측정되었다.

• 한국분말재료학회지
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• 제10권4호
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• pp.255-261
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• 2003

Ultrafine TaC-5%Co composite powders were synthesized by spray conversion process using tantalum oxalate solution and cobalt nitrate hexahydrate(Co($(NO_3)_2$ . 6$H_2O$). The phase of Ta-Co oxide powders had amorphous structures after calcination below 50$0^{\circ}C$ and changed $Ta_2O_5$, $TaO_2$ and $CoTa_2O_6$ phase by heating above $600^{\circ}C$. The calcined Ta-Co oxide powders were spherical agglomerates consisted of ultrafine primary particles <50 nm in size. By carbothermal reaction, the TaC phase began to form from 90$0^{\circ}C$. The complete formation of TaC could be achieved at 105$0^{\circ}C$ for 6 hours. The observed size of TaC-Co composite powders by TEM was smaller than 200 nm.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• 전기학회논문지
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• 제56권4호
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• pp.756-760
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• 2007

The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.