• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.659-662
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• 2004

The microwave dielectric properties of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics prepared by conventional mixed oxide method and sintered at $1400^{\circ}C-1450^{\circ}C$. According to X-ray diffraction patterns of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ phase were showed. Porosity of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics were reduced with increasing sintering temperature, but the bulk density was increased. In the case of $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics sintered at $1425^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF) were 13.69, 63,754GHz and -29.37 $ppm/^{\circ}C$, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.42-42
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• 2007

무독성 원소로 조성된 Ti-30Ta-xZr(x=3, 7, 10, 15) 합금을 제조하여, HA박막과 금속사이의 계면이 생기는 문제점을 개선하기 위해 합금 표면에 HA/TiN 및 HA/ZrN 이중층을 형성시킨 후 전기화학적 방법으로 코팅의 영향을 조사하였다.

• Journal of Mechanical Science and Technology
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• v.18 no.12
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• pp.2204-2208
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• 2004

Ti-8Ta-3Nb has been developed as a new biomaterial. The experimental specimens are as-cast and forged Ti-8Ta-3Nb alloys. Treatment in a solution, ranging from 760 to 960$^{\circ}C$ has carried out. The microstructural research has carried out after the solution treatment and the hardness was measured. The specific heat and the length variations of Ti-8Ta-3Nb were also measured. The optimum temperature for the solution heat treatment of Ti-8Ta-3Nb was found to be 880$^{\circ}C$. This was based on the mechanical properties and the volume fraction of ${\alpha}$ phase and their phases shown from the results of the solution heat treatment. From the results, the ${\beta}$ transition temperature of Ti-8Ta-3Nb was found to be between 860$^{\circ}C$ and 880$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.582-586
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• 1995

The crystal structures of (Na0.3Sr0.7)(Ti0.7M0.3)O3 (M=Ta, Nb) compounds were determined using the Rietveld method. Due to the tilting of a oxygen octahedron, (Na0.3Sr0.7)(Ti0.7Nb0.3)O3 had a superlattice of doubled a, b and c of simple perovskite. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was tetragonal with a space group 14/mmm. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was a cubic with space group Pm3m, in which no tilting of oxygen octahedron was observed. The difference in the oxygen tilting of these two materials was due to the larger covalency of Nb-O bond than that of Ta-O bond, which induced a strong $\pi$Nb0 bonding in (Na0.3Sr0.7)(Ti0.7M0.3)O3. Therefore, the higher transition temperature of (Na0.3Sr0.7)(Ti0.7M0.3)O3 could be related to the larger tilting of oxygen octahedron.

• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.178-183
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• 2021

The temperature and frequency dependence of the dielectric constant of the BaTiO₃ substituted with two types of donor dopants, Nb⁵⁺ and Ta⁵⁺, respectively, were compared and analyzed. Dielectric specimens of four specific compositions, Ba_0.95Nb_0.05TiO₃, Ba_0.90Nb_0.10TiO₃, Ba_0.95Ta_0.05TiO₃, and Ba_0.90Ta_0.010TiO₃ were prepared by calcining at 1100 ℃ and sintering at 1300 ℃ to have a perovskite structure to measure capacitance. XRD and SEM analysis were used to observe the structure, with particular focus on the integration into the Nb⁵⁺ and Ta⁵⁺ substituted BaTiO₃ crystal lattice. X-ray diffraction peaks in the (200) and (002) planes were observed between 45.10° and 45.45° of the BaTiO₃ solid solution substituted with different fractions of Nb⁵⁺ and Ta⁵⁺. The dielectric properties were analyzed and the relationship between the properties and structure of the substituted BaTiO₃ was established. The fine particles and high density of the substituted BaTiO₃ were maintained like pure BaTiO₃, and in particular, a shift toward the low temperature side of the phase transition temperature range was clearly found, unlike pure BaTiO₃. In addition, the phase transition at a temperature higher than the Curie temperature relatively satisfies the modified Curie-Weiss law.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.363-366
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• 2004

The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional mixed oxide method and sintered at $1425^{\circ}C{\sim}1500^{\circ}C$. According to XRD Patterns, hexagonal $Mg_4Ta_2O_9$ phase and cubic $SrTiO_3$ Phase were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596GHz and $-3.14ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.48-48
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.114-114
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• 1993

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1370-1373
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• 2003

Specimens of Ti-10Ta-10Nb have been tested for Rockwall hardness after heating to either the $\alpha$+$\beta$ and $\beta$-phase field. And the specific heat and the dilatometer of Ti-10Ta-103Nb swaged have been measured. From the result, the $\beta$ transus of the alloy was determined to be 82$0^{\circ}C$. The hot deformation behavior of Ti-10Ta-10Nb with an $\alpha$+$\beta$ microstructure is modeled in the temperature 75$0^{\circ}C$ and strain rate range 0.001-10$^{-1}$