• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.477-477
• /
• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• The Journal of Korean Academy of Prosthodontics
• /
• v.30 no.3
• /
• pp.338-360
• /
• 1992

This study was performed to investigate the phonetic alterations with upper anterior teeth were missing. To compare the changes of the phonations, before and after insertion of the temporary prosthesis, six subjects who lost their upper anterior teeth were selected (2-male, 4-female). Tested sounds (/ga(가), na(나), da(다), ra(라), sa(사), ja(자), cha(차), ta(타), pa(파), ha(하), gi(기), ni(니), di(디), ri(리), si(시), jl(지), chi(치), ti(티), pi(피), hi(히), seu(스), se(세), so(소), su(수)/were programmed into an IBM AT with and without temporary prosthesis. These experiments were analyzed by formants, consonants durations, and energy level changes with an LSI speech work station program. During the pronunciation of the tested sounds (with and without temporary prosthesis), mandibular movements were recorded to a Mandibular Kinesiogram and analyzed . The findings led to the following conclusions: 1. Objective differences could not be found. However, in every informant, subjective improvement could be noticed. 2. There were no persistant correlations of the formant's changes. And in every informant, phonetic changes were variable. 3. There were various changes of the consonant durations in every informant. By and large, those of /si(시), jl(지), chi(치), Pi(피), hi(히)/ were longer than other tested sounds. After insertion of the prosthesis, durations were shorter. Consonants with /i(ㅣ)/ were longer than with /a(ㅏ)/, with or without prosthesis. 4. With and without temporary prosthesis, mandibular movements were various in the frontal view. Mandibular movements showed lateral deviations, and mandibular positions with /si(시), ji(지), ti(티), seu(스), hi(히)/ were nearer to the mandibular rest position. 5. The kinds of temporary prosthesis and conditions of the missing teeth influenced every informant variously, so there were no correlation between informants. 6. Energy levels increased in all tested sounds with a fixed temporary prosthesis. And, there were no differences between before and after insertion of a removable temporary prosthesis. However, sibilant sounds, and consonants with /i(ㅣ)/ showed a little increased energy level.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1553-1555
• /
• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Journal of the Korean Magnetics Society
• /
• v.9 no.4
• /
• pp.196-202
• /
• 1999

The magnetic properties and the microstructures of the Mn-Ir/Ni-Fe multilayers with various stacking structures and buffer layer materials have been investigated. The (111) texture of Mn-Ir/Ni-Fe was observed in the top structures with Ta, Zr, or Ti buffer materials. However, all Mn-Ir/Ni-Fe multilayers with top structures exhibit high $H_{ex}$, regardless of the (111) preferred orientation of Mn-Ir film. The samples whose high $H_{ex}$ observed grain-to-grain epitaxial tendency and the large grain of Mn-Ir film at the interface. It can be explained that the $H_{ex}$ does not depend on the (111) texture of the Mn-Ir film and the interface roughness, but depends on the grain size of the Mn-Ir film and the morphology of the interface between the Mn-Ir and the Ni-Fe grains, and the $H_c$ depends on the interface roughness between the Mn-Ir and the Ni-Fe films.

• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.350-353
• /
• 2003

Millimeter-wave dielectric ceramics have been used like applications for ultrahigh speed wireless LAN because it reduces the resources of electromagnetic wave, and Intelligent Transport System (ITS) because of straight propagation wave. For millimeterwave, the dielectric ceramics with high quality factor (Q$.$f), low dielectric constant($\varepsilon$), and nearly zero temperature coefficient of resonant frequency ($\tau$) are needed. No microwave dielectric ceramics with these three properties exist except Ba(Mg$\_$1/3/Ta/sub1/3/)O$_3$ (BMT), which has a little high s: In this paper, alumina (Al$_2$O$_3$) and fosterite (Mg$_2$SiO$_4$), candidates for millimeter-wave applications, were studied with an objective to get high q$.$f and nearly zero $\tau$$\_$f/ For alumina ceramics, q$.$f more than 680,000 GHz was obtained but it was difficult to obtain nearly zero Qf. On the other hand, for forsterite ceramics, q$.$f was achieved from 10,000 GHz of commercial for sterite to 240,000 GHz of highly purified MgO and SiO$_2$ raw materials, and $\tau$$\_$f/ was reduced a few by adding TiO$_2$ with high positive $\tau$$\_$f/.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.177-180
• /
• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• Asian Pacific Journal of Cancer Prevention
• /
• v.14 no.7
• /
• pp.4067-4069
• /
• 2013

Background: The present study was undertaken to establish any correlation of elevated levels of CA19-9 with tumor stage or grade of urothelial carcinoma. Materials and Methods: This hospital based study was carried out in the Department of Biochemistry of Nepalese Army Institute of Health Sciences between $1^{st}$ July 2012 and $31^{st}$ December 2012. Approval for the study was obtained from the institutional research ethical committee. CA19-9 was assayed with an ELISA reader for all cases and expressed in U/ml with 37U/ml taken as the cut-off upper value for normal. Results: Out of 20 cases enrolled, 15 were of urothelial carcinoma and the remaining 5 were controls. There was marked difference between the mean values of CA19-9 in cases $40.2{\pm}19.3U/ml$ of urothelial carcinoma and controls $7.98{\pm}7.34U/ml$. The number of cases in Ta, TI, T2, T3, T4 stages of urothelial carcinoma were 2, 6, 3, 3, 1 respectively. The percentage rise in CA19-9 was less with low grade tumors (22.2%) when compared with high grade tumors (66.6%) (p value $0.001^*$). The percentage of rise in CA19-9 for muscle invasive tumors was very high when compared to superficial tumors. Similarly, the percentage of rise in CA19-9 for metastatic disease was very high when compared to non-metastatic disease and it was found statistically significant (p value $0.001^*$). Conclusion: Serum CA19-9 levels predicts the prognosis of urothelial carcinoma as it is almost invariably raised in tumors having metastatic spread.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.144-144
• /
• 1999

최근 국내 반도체 기술의 비약적인 발전으로 전자 기기 전반에 소형화, 고주파화, 고기능화 등이 진행되는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기 신호를 변조.증폭시키는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기신호를 변조.증폭시키는 인덕터, 트랜스 포머와 같은 수동 자기 소자는 아직도 3차원 벌크 형태로 사용되고 있다. 일본을 중심으로 각국에서는 자기 소자의 박막.소형화에 대한 다각도의 연구가 진행되었으나 국내서는 아직 미미한 실정이다. 따라서 고집적 전원 공급 장치나 지능 센서 등에 반도체와 자기 소자의 사용 주파수 대역과 크기가 통합된 반도체-자성체 IC(semiconductor-magnetic integrated circuit)의 필요성이 절실히 요구되고 있다. 현재 사용중인 벌크형 인덕터나, 트랜스 포머의 경우 10NHz이상의 고주파 대역에는 응용되지 못하고 있다. 이는 적용된 자성체가 페라이트(ferrite)로서 초투자율은 크지만 고주파대역에서의 공진 현상에 의해 저투자율을 나타내고, 포화 자속밀도가 낮기 때문이다. 이러한 페라이트 자성체의 대체품으로 주목받고 있는 것이 Fe, Co계 고비저항 자성마이다. 그러나 Co는 낮은 포화자속밀도를 나타내기 때문에 이러한 조건을 충족시키는 자성막으로 Fe계 미세 결정막을 사용하였다. 본 연구에서는 선택적 전기 도금법(selective electroplating method)과 LIGA like process를 이용하여 공시형 인덕터(air core inductor)의 라이브러리(library)를 구축한 뒤, 고주파 대역에서의 우수한 연자기 특성을 가지는 Ti/FeTaN막을 적용한 자기 박막 인덕터(magnetic thin film inductor)를 제작하여 비교.분석하였다. 제조된 인덕터의 특성 추정은 impedence analyzer를 이용하여 주파수에 따른 저항(resistance), 인덕턴스(inductance)를 측정, 계산한 성능지수(quality factor)로서 인덕터의 성능을 평가하였다. 제조된 박막 인덕터의 코일 형상은 5턴의 double rectangular spiral 구조였으며, 적용된 자성막의 유효 투자율9effective permeability)은 1500, 자성막, 절연막 그리고 코일의 두께는 각각 2$\mu\textrm{m}$, 1$\mu\textrm{m}$, 20$\mu\textrm{m}$이며 코일의 폭은 100$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다.

• Korean Journal of Materials Research
• /
• v.14 no.6
• /
• pp.402-406
• /
• 2004

$WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

• Korean Journal of Materials Research
• /
• v.22 no.5
• /
• pp.243-248
• /
• 2012

ZrN nanoparticles were prepared by an exothermic reduction of $ZrCl_4$ with $NaN_3$ in the presence of NaCl flux in a nitrogen atmosphere. Using a solid-state combustion approach, we have demonstrated that the zirconium nitride nanoparticles synthesis process can be completed in only several minutes compared with a few hours for previous synthesis approaches. The chemistry of the combustion process is not complex and is based on a metathesis reaction between $ZrCl_4$ and $NaN_3$. Because of the low melting and boiling points of the raw materials it was possible to synthesize the ZrN phase at low combustion temperatures. It was shown that the combustion temperature and the size of the particles can be readily controlled by tuning the concentration of the NaCl flux. The results show that an increase in the NaCl concentration (from 2 to 13 M) results in a temperature decrease from 1280 to $750^{\circ}C$. ZrN nanoparticles have a high surface area (50-70 $m^2/g$), narrow pore size distribution, and nano-particle size between 10 and 30 nm. The activation energy, which can be extracted from the experimental combustion temperature data, is: E = 20 kcal/mol. The method reported here is self-sustaining, rapid, and can be scaled up for a large scale production of a transition metal nitride nanoparticle system (TiN, TaN, HfN, etc.) with suitable halide salts and alkali metal azide.