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A ZCT PWM Boost Converter using parallel MOSFET switch (병렬 MOSFET 스위치를 이용한 ZCT PWM Boost Converter)

  • Kim Tea-Woo;Hur Do-Gil;Kim Hack-Sung
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.759-762
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    • 2002
  • A ZCT(Zero Current Transition) PWM(Pulse-Width-Modulation) boost converter using parallel MOSFET switch is proposed in this paper. The IGBT(main switch) of the proposed converter is always turned on with zero current switching and turned off with zero current/zero voltage switching. The MOSFET(auxiliary switch) is also operates with soft switching condition. In addtion to, the proposed converter eliminates the reverse recovery current of the freewheeling diode by adding the resonant inductor, Lr, in series with the main switch. Therefore, the turn on/turn off switching losses of switches are minimized and the conduction losses by using IGBT switch are reduced. In addition to, using parallel MOSFET switch overcomes the switching frequency limitation occurred by current tail. As mentioned above, the characteristics are verified through experimental results.

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A Novel Resonant Converter for driving Switched Reluctance Motor (스위치드 릴럭턴스 전동기 구동을 위한 새로운 공진형 컨버터)

  • 김정성;김현중;양이우;김영석
    • Proceedings of the KIPE Conference
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    • 1998.07a
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    • pp.413-417
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    • 1998
  • In order to obtain better performance for a SRM(switched reluctance motor) drive, the commutation from one phase to another must be as fast as possible. In this paper a novel converter for SRM drive is proposed, which can accelerate the turn-off and turn-on time by using two capacitors to form a resonant circuit with the motor inductance. Two capacitors recover rapidly stored energy in the off going phase and establish rapidly the current rising in the on going phase. As a result, the current tail can be shortened and the dwell angle in the positive torque region can be extended. And comparing with the asymmetric converter, this converter has higher energy availability in energy conversion process and less number of switches.

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A New Parallel Hybrid Filter Configuration Minimizing Active Filter Size

  • Park, Sukin;Sung, Jeong-hyoun;Nam, Kwanghee
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.894-897
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    • 1998
  • A conventional parallel hybrid active filter has an inherent problem of large current ratings of devices used in inverter. In general, this problem has been solved by adjusting turn ratio of a matching transformer. However, making the transformer with high turn ratio may be not available for high power system due to its requirement for high voltage insulation. In this paper, a new configuration is proposed for parallel hybrid active filter. In the proposed hybrid active filter, the active filter is connected to the passive filter inductor in parallel through a matching transformer for the aim of reducing the size of inverter. Through computer simulations, we have shown the outstanding performances of the proposed topology.

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A Gate Drive Circuit for Low Switching Losses and Snubber Energy Recovery

  • Shimizu, Toshihisa;Wada, Keiji
    • Journal of Power Electronics
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    • v.9 no.2
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    • pp.259-266
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    • 2009
  • In order to increase the power density of power converters, reduction of the switching losses at high-frequency switching conditions is one of the most important issues. This paper presents a new gate drive circuit that enables the reduction of switching losses in both the Power MOSFET and the IGBT. A distinctive feature of this method is that both the turn-on loss and the turn-off loss are decreased simultaneously without using a conventional ZVS circuit, such as the quasi-resonant adjunctive circuit. Experimental results of the switching loss of both the Power MOSFET and the IGBT are shown. In addition, an energy recovery circuit suitable for use in IGBTs that can be realized by modifying the proposed gate drive circuit is also proposed. The effectiveness of both the proposed circuits was confirmed experimentally by the buck-chopper circuit.

A New Family of Non-Isolated Zero-Current Transition PWM Converters

  • Yazdani, Mohammad Rouhollah;Dust, Mohammad Pahlavan;Hemmati, Poorya
    • Journal of Power Electronics
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    • v.16 no.5
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    • pp.1669-1677
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    • 2016
  • A new auxiliary circuit for boost, buck, buck-boost, Cuk, SEPIC, and zeta converters is introduced to provide soft switching for pulse-width modulation converters. In the aforementioned family of DC-DC converters, the main and auxiliary switches turn on under zero current transition (ZCT) and turn off with zero voltage and current transition (ZVZCT). All diodes commutate under soft switching conditions. On the basis of the proposed converter family, the boost topology is analyzed, and its operating modes are presented. The validity of the theoretical analysis is justified by the experimental results of a 100W, 100 kHz prototype. The conducted electromagnetic emissions of the proposed boost converter are measured and found to be lower than those of another ZCT boost converter.

Fabrication Techniques for Carbon Nanotube Field Emitters by Screen Printing

  • Yi, Mann;Jung, Hyuk;Lee, Dong-Gu;Seo, Woo-Suk;Park, Jong-Won;Chun, Hyun-Tae;Koh, Nam-Je
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.655-657
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    • 2002
  • The carbon nanotube emitters for field emission displays were fabricated by screen printing techniques. The pastes for screen printing are composed of organic binders, carbon nanotubes, and some additive materials. Then the pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. From the I-V characteristics, the turn-on field of SWNT was lower than that of MWNT. The decrease in the mesh size of screen masks resulted in decreasing the turn-on field and increasing the electron emission current. When the carbon nanotubes were mixed with glass frit, glass frit appeared to contribute to the vertically aligning of carbon nanotubes on glass.

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A Novel Design for High Voltage RC-GCTs (고전압 GCT(Gate Commutated Thyristor) 소자 설계)

  • Zhang, C.L.;Kim, S.C.;Kim, E.D.;Kim, H.W.;Seo, K.S.;Kim, N.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.312-315
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    • 2003
  • Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

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Electrical Characteristics of Insulation Paper for Distribution Transformers (주상변압기 고압권선의 서지응답 특성)

  • Song, I.K.;Jung, J.W.;Lee, B.S.;Lee, J.B.;Kim, S.J.;Oh, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.156-159
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    • 2002
  • This paper presents an experimental study of the surge response characteristics for the primary winding of a pole transformer and ultimately aims at devising countermeasures against the surge in operating transformer. After applying the impulse voltage to the primary of the 30 kVA pole transformer with single bushing, the voltage waveforms were measured at each tap lead and compared with one another. As a result, the voltage peak of the surge propagating in the primary was decreased in magnitude at a constant rate and somewhat delayed compared to the peak of the applied surge as the tap leads were getting closer to the grounding terminal. The voltage measured at the secondary was not delayed in time, different from that at the primary, and it was about 1/6 according to the turn ratio.

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Thermal Characteristics Analysis of Organic Electroluminescence Device using MEH-PPV (MEH-PPV를 이용한 유기전계발광소자의 열적 특성 분석)

  • Park, Jae-Young;Park, Seung-Wook;Shin, Moo-Whan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.112-116
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    • 2001
  • Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly[2-(2'-ethylhexyloxy )-5-methoxy-1,4-pheny lenevinylene])/Al(aluminium) and ITO/MEH-PPV/$Alq_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that turn on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness $200\AA$ of $Alq_3$ is shown electrical properties that turn on voltage is about 11 V, and current density decreases as a function of increasing temperature.ࠀȀ 耀Ѐ€

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A Design of High Speed SRM Drive System (SRM의 고속구동을 위한 제어시스템 설계)

  • Lee, Ju-Hyun;Lee, Dong-Hee;Ahn, Jin-Woo
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.55 no.7
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    • pp.337-345
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    • 2006
  • This paper proposes a high speed SRM drive system for blower application with a new 4-level inverter and precise excitation position generator. For a high speed blower, a proper inverter and control method are proposed and the output characteristics are analyzed. In order to get a fast build-up and demagnetization of excitation current, a 4-level inverter system is proposed. The proposed 4-level inverter has additional charge capacitor, power switch and diode in the conventional asymmetric converter. The charged high voltage is supplied to the phase winding for fast current build-up, and demagnetization current is charged to additional capacitor of the 4-level inverter. In addition, a precise excitation position generator can reduce turn-on and turn-off angle error according to sampling period of digital control system. The proposed high speed SRM drive system is verified by computer simulation and experimental results.