• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.826_827
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• 2009

This paper introduces major potential faults of Poly-Phase Permanent Magnet Synchronous Motor and their simulation realization methods. The faults of Poly-Phase PM Synchronous Motor, generally, stator turn faults, demagnetizing field. Based on the derived expressions, Poly-Phase PM synchronous Motor simulation model, which is capable of representing stator turn faults, is implemented in Maxwell.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.10
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• pp.713-718
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• 1987

A new method for the modeling of non-ideal dc-dc converters whose switching times are finite is proposed. The effects of finite turn-on, turn-off times, delay time, storage time, reverse recovery process on the system stability, dc transfer function and efficiency are investigated. It is verified how system poles are changed and how dc transfer function and efficiency are decreased by non-ideal switching.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1479-1481
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• 1996

The Purpose of this paper is to produce air core inductor and measure its electrical properties for high frequency. Especially we focused attention on the effect of geometrical parameters such as coil width, distance between coils, turn number. In addition, the influence of film morphology at inductor was investigated. Increase of coil width and decrease of turn number resulted in promotion of electric properties.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.487-489
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• 1997

The control of the switched reluctance motor is usually on the inductance profiles as a function of position. In this paper, a control scheme to maximize the motor torque is proposed by determining optimal turn-off angle with a self-tuning control method.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.265-268
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• 1998

This paper presents a soft-switching average current control PWM high power factor boost converter. Conventional boost ZVT-PWM converter has a disadvantage of hard-switching for auxiliary switch at turn-off. A soft switched auxiliary switch is proposed to achieve a high performance ZVT-PWM boost rectifier. The simulation and experimental results show that soft switching operation can be maintained for wide line and load range, which in turn improves the converter performance in terms of efficiency, switching noise and circuit reliability.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.241-245
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• 1998

This paper gives the novel design of compensated ring anode-short for power GTO thyristor. By means of this design the power GTO of $\Phi$63.5mm 2500A/4500V reaches more uniform turn-off compared with conventional ring short GTO, resulting in higher turn-off ability and low tail current/tail time.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.428-432
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• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.460-465
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• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in switching power supplies. However, its turn-on and turn-off characteristics cause severe switching loss and switching frequency limitation. This paper proposes 2.4kW, 48V, high efficiency half-bridge DC-DC converter using paralleled IGBT-MOSFET switch concept, where each of IGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by using the linearized model and the opteration of the converter are investigated by simulation results.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2643-2645
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• 2002

집적회로에서 MOSFET이 낮은 Turn-on 저항이 요구되는 스위치 등으로 사용되는 경우 단일 MOSFET이 그 주변의 복잡한 기능의 회고보다 오히려 반도체 위에서 차지하는 면적이 막대하여 IC의 소형화 및 가격 경쟁력을 높이는데 있어서 중요한 문제로 대두되고 있다. Turn-on 시 극히 낮은 저항을 갖는 넓은 채널 폭(W)의 MOSFET을 submicron 공정에서 면적 면에서 효율적으로 설계하는 다양한 새로운 배치설계법을 소개하고, 이론 이용할 경우 기존의 구조에 비하여 약40%까지 면적을 절약할 수 있음을 보인다.